GB9921445D0 - - Google Patents

Info

Publication number
GB9921445D0
GB9921445D0 GBGB9921445.4A GB9921445A GB9921445D0 GB 9921445 D0 GB9921445 D0 GB 9921445D0 GB 9921445 A GB9921445 A GB 9921445A GB 9921445 D0 GB9921445 D0 GB 9921445D0
Authority
GB
United Kingdom
Prior art keywords
laser
grating
mode
ingaasp
hop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB9921445.4A
Other languages
English (en)
Other versions
GB2354110A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to GB9921445A priority Critical patent/GB2354110A/en
Publication of GB9921445D0 publication Critical patent/GB9921445D0/en
Priority to PCT/GB2000/003483 priority patent/WO2001018924A1/en
Priority to EP00958866A priority patent/EP1214764B1/en
Priority to AU70280/00A priority patent/AU7028000A/en
Priority to AT00958866T priority patent/ATE239990T1/de
Priority to DE60002591T priority patent/DE60002591T2/de
Publication of GB2354110A publication Critical patent/GB2354110A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Optical Communication System (AREA)
GB9921445A 1999-09-08 1999-09-08 Ridge waveguide lasers Withdrawn GB2354110A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB9921445A GB2354110A (en) 1999-09-08 1999-09-08 Ridge waveguide lasers
PCT/GB2000/003483 WO2001018924A1 (en) 1999-09-08 2000-09-08 Semiconductor laser diode with a distributed reflector
EP00958866A EP1214764B1 (en) 1999-09-08 2000-09-08 Semiconductor laser diode with a distributed reflector
AU70280/00A AU7028000A (en) 1999-09-08 2000-09-08 Semiconductor laser diode with a distributed reflector
AT00958866T ATE239990T1 (de) 1999-09-08 2000-09-08 Halbleiterlaserdiode mit verteiltem reflektor
DE60002591T DE60002591T2 (de) 1999-09-08 2000-09-08 Halbleiterlaserdiode mit verteiltem reflektor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9921445A GB2354110A (en) 1999-09-08 1999-09-08 Ridge waveguide lasers

Publications (2)

Publication Number Publication Date
GB9921445D0 true GB9921445D0 (enExample) 1999-11-10
GB2354110A GB2354110A (en) 2001-03-14

Family

ID=10860715

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9921445A Withdrawn GB2354110A (en) 1999-09-08 1999-09-08 Ridge waveguide lasers

Country Status (6)

Country Link
EP (1) EP1214764B1 (enExample)
AT (1) ATE239990T1 (enExample)
AU (1) AU7028000A (enExample)
DE (1) DE60002591T2 (enExample)
GB (1) GB2354110A (enExample)
WO (1) WO2001018924A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2386254A (en) 1999-03-05 2003-09-10 Nanovis Llc Superlattices
EP1540732B1 (en) * 2002-06-03 2009-10-28 Mears Technologies, Inc. Fabry-perot laser with wavelength control
JP2004172506A (ja) * 2002-11-22 2004-06-17 Sony Corp 半導体レーザ素子

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59205787A (ja) * 1983-05-09 1984-11-21 Nec Corp 単一軸モ−ド半導体レ−ザ
JPS6393187A (ja) * 1986-10-08 1988-04-23 Sharp Corp 分布帰還型半導体レ−ザ
DE3875743T2 (de) * 1987-01-21 1993-03-25 American Telephone & Telegraph Hydridlaser fuer optisches nachrichtenwesen.
JP2749038B2 (ja) * 1987-07-31 1998-05-13 株式会社日立製作所 波長可変半導体レーザ
US4856017A (en) * 1987-12-22 1989-08-08 Ortel Corporation Single frequency high power semiconductor laser
JPH02143581A (ja) * 1988-11-25 1990-06-01 Furukawa Electric Co Ltd:The 半導体レーザ素子
CA2018928C (en) * 1989-06-14 1994-07-26 Akihiko Oka Semiconductor laser device
JPH0738204A (ja) * 1993-07-20 1995-02-07 Mitsubishi Electric Corp 半導体光デバイス及びその製造方法
FR2734097B1 (fr) * 1995-05-12 1997-06-06 Thomson Csf Laser a semiconducteurs
JPH1098235A (ja) * 1996-08-01 1998-04-14 Pioneer Electron Corp 無再成長分布帰還リッジ型半導体レーザ及びその製造方法
FR2765347B1 (fr) * 1997-06-26 1999-09-24 Alsthom Cge Alcatel Reflecteur de bragg en semi-conducteur et procede de fabrication

Also Published As

Publication number Publication date
EP1214764A1 (en) 2002-06-19
ATE239990T1 (de) 2003-05-15
GB2354110A (en) 2001-03-14
EP1214764B1 (en) 2003-05-07
AU7028000A (en) 2001-04-10
DE60002591D1 (de) 2003-06-12
DE60002591T2 (de) 2004-04-01
WO2001018924A1 (en) 2001-03-15

Similar Documents

Publication Publication Date Title
DE69908935D1 (de) Hochleistungshalbleiterlaser mit verteilter rückkopplung und schmaler spektraler emissionsbreite
WO2003041234A1 (en) Semiconductor element
EP1298767A3 (en) Device and method for providing a tunable semiconductor laser
WO2003043143A3 (en) Tunable laser device for avoiding optical mode hops
WO2002025705A3 (en) Quantum dot devices
US20040099869A1 (en) Light emitting heterostructure
EP1233493A3 (en) GaN based vertical cavity surface emitting laser diode
EP1063711A4 (en) NITRIDE ELECTROLUMINESCENT SEMICONDUCTOR DEVICE
US20040179566A1 (en) Multi-color stacked semiconductor lasers
WO2004030032A3 (en) Type ii quantum well optoelectronic devices
TW200505119A (en) Method and apparatus for suppression of spatial-hole burning in second or higher order DFB lasers
EP1202407A3 (en) Semiconductor laser device for use as a pumping light source
CA2302103A1 (en) Quantum well type light-emitting diode
EP1480304A4 (en) QUANTIC NANOCOMPOSITE SEMICONDUCTOR LASER AND QUANTUM NANOCOMPOSITE NETWORK
DE60204168D1 (de) Phasenverschobene oberflächenemittierende dfb laserstrukturen mit verstärkenden oder absorbierenden gittern
GB9921445D0 (enExample)
US7639720B2 (en) Two-dimensional photonic crystal surface emitting laser
WO2004030111A3 (en) Narrow spectral width light emitting diode
WO2002071630A3 (en) Vcsel with single lasing-reflectivity peak reflector
US20090268770A1 (en) Gain Clamped Optical Device For Emitting LED Mode Light
US7561607B2 (en) Laser source with broadband spectrum emission
WO2004038873A3 (en) Kink free operation of pump lasers having diffraction grating for providing wavelength stabilization
EP1696527A3 (en) Low loss grating for high efficiency wavelength stabilized high power lasers
Knigge et al. Wavelength stabilized 905 nm diode lasers in the 100 W class for automotive LiDAR
WO2003019741A3 (en) Surface emitting laser

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)