DE60204168D1 - Phasenverschobene oberflächenemittierende dfb laserstrukturen mit verstärkenden oder absorbierenden gittern - Google Patents

Phasenverschobene oberflächenemittierende dfb laserstrukturen mit verstärkenden oder absorbierenden gittern

Info

Publication number
DE60204168D1
DE60204168D1 DE60204168T DE60204168T DE60204168D1 DE 60204168 D1 DE60204168 D1 DE 60204168D1 DE 60204168 T DE60204168 T DE 60204168T DE 60204168 T DE60204168 T DE 60204168T DE 60204168 D1 DE60204168 D1 DE 60204168D1
Authority
DE
Germany
Prior art keywords
gain element
length
elements
grating
grids
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60204168T
Other languages
English (en)
Other versions
DE60204168T2 (de
Inventor
M Shams-Zadeh-Amiri
Wei Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Photonami Inc
Original Assignee
Photonami Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CA002364817A external-priority patent/CA2364817A1/en
Application filed by Photonami Inc filed Critical Photonami Inc
Publication of DE60204168D1 publication Critical patent/DE60204168D1/de
Application granted granted Critical
Publication of DE60204168T2 publication Critical patent/DE60204168T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
DE60204168T 2001-12-11 2002-12-11 Phasenverschobene oberflächenemittierende dfb laserstrukturen mit verstärkenden oder absorbierenden gittern Expired - Fee Related DE60204168T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CA2364817 2001-12-11
CA002364817A CA2364817A1 (en) 2001-11-16 2001-12-11 Phase shifted surface emitting dfb laser structures with gain or absorptive gratings
PCT/CA2002/001893 WO2003055019A1 (en) 2001-12-11 2002-12-11 Phase shifted surface emitting dfb laser structures with gain or absorptive gratings

Publications (2)

Publication Number Publication Date
DE60204168D1 true DE60204168D1 (de) 2005-06-16
DE60204168T2 DE60204168T2 (de) 2006-01-19

Family

ID=4170807

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60204168T Expired - Fee Related DE60204168T2 (de) 2001-12-11 2002-12-11 Phasenverschobene oberflächenemittierende dfb laserstrukturen mit verstärkenden oder absorbierenden gittern

Country Status (12)

Country Link
US (1) US20030147439A1 (de)
EP (1) EP1454393B1 (de)
JP (1) JP2005513803A (de)
KR (1) KR20040065264A (de)
CN (1) CN1689204A (de)
AT (1) ATE295623T1 (de)
AU (1) AU2002351571A1 (de)
DE (1) DE60204168T2 (de)
IL (1) IL162478A0 (de)
MX (1) MXPA04005726A (de)
RU (1) RU2004121153A (de)
WO (1) WO2003055019A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040190580A1 (en) * 2003-03-04 2004-09-30 Bardia Pezeshki High-yield high-precision distributed feedback laser based on an array
CN1823456A (zh) * 2003-06-10 2006-08-23 福托纳米公司 在二阶或高阶分布反馈激光器中抑制空间烧孔的方法和设备
US7649916B2 (en) * 2004-06-30 2010-01-19 Finisar Corporation Semiconductor laser with side mode suppression
US7313159B2 (en) * 2004-12-23 2007-12-25 Photodigm, Inc. Apparatus and method for providing a single-mode grating-outcoupled surface emitting laser with detuned second-order outcoupler grating
KR100794653B1 (ko) * 2005-12-06 2008-01-14 한국전자통신연구원 분포궤환형 양자점 반도체 레이저 구조물
JP2007227560A (ja) * 2006-02-22 2007-09-06 Mitsubishi Electric Corp 利得結合型分布帰還型半導体レーザ
GB2437784B (en) * 2006-05-02 2011-05-11 Jian-Jun He Q-modulated semiconductor laser with electro-absorptive grating structures
KR20140057536A (ko) * 2011-07-04 2014-05-13 덴마크스 텍니스케 유니버시테트 레이저 소자
EP2933885B1 (de) * 2014-04-16 2017-05-31 Alcatel Lucent Abstimmbare lichtemittierende Vorrichtung mit an einem Ringresonator angekoppelten DML
US20210098970A1 (en) * 2019-10-01 2021-04-01 Ii-Vi Delaware, Inc. Isolator-free laser
CN112382858B (zh) * 2020-10-23 2022-03-15 西安理工大学 一种基于全介质材料的光可调四频带太赫兹超材料吸收器
CN112467516B (zh) * 2020-11-11 2021-10-08 华中科技大学 一种面发射oam光束的分布反馈激光器及其调制方法
US11876350B2 (en) 2020-11-13 2024-01-16 Ii-Vi Delaware, Inc. Multi-wavelength VCSEL array and method of fabrication
CN114866420B (zh) * 2022-04-28 2023-06-09 烽火通信科技股份有限公司 一种对波分传输系统进行优化的方法和装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2692913B2 (ja) * 1987-12-19 1997-12-17 株式会社東芝 グレーティング結合型表面発光レーザ素子およびその変調方法
US5727013A (en) * 1995-10-27 1998-03-10 Wisconsin Alumni Research Foundation Single lobe surface emitting complex coupled distributed feedback semiconductor laser
US5970081A (en) * 1996-09-17 1999-10-19 Kabushiki Kaisha Toshiba Grating coupled surface emitting device
US6117699A (en) * 1998-04-10 2000-09-12 Hewlett-Packard Company Monolithic multiple wavelength VCSEL array
JPH11307856A (ja) * 1998-04-21 1999-11-05 Toshiba Corp 分布帰還型レーザ及びその製造方法
US6330265B1 (en) * 1998-04-21 2001-12-11 Kabushiki Kaisha Toshiba Optical functional element and transmission device
JP3186705B2 (ja) * 1998-08-27 2001-07-11 日本電気株式会社 分布帰還型半導体レーザ
AU6628700A (en) * 1999-08-13 2001-03-13 Wisconsin Alumni Research Foundation Single mode, single lobe surface emitting distributed feedback semiconductor laser
US20020003824A1 (en) * 2000-05-31 2002-01-10 Lo Yu-Hwa Surface-emitting laser devices with integrated beam-shaping optics and power-monitoring detectors
CN1823456A (zh) * 2003-06-10 2006-08-23 福托纳米公司 在二阶或高阶分布反馈激光器中抑制空间烧孔的方法和设备

Also Published As

Publication number Publication date
EP1454393B1 (de) 2005-05-11
JP2005513803A (ja) 2005-05-12
EP1454393A1 (de) 2004-09-08
DE60204168T2 (de) 2006-01-19
US20030147439A1 (en) 2003-08-07
MXPA04005726A (es) 2005-07-01
AU2002351571A1 (en) 2003-07-09
KR20040065264A (ko) 2004-07-21
IL162478A0 (en) 2005-11-20
WO2003055019A1 (en) 2003-07-03
CN1689204A (zh) 2005-10-26
ATE295623T1 (de) 2005-05-15
RU2004121153A (ru) 2005-03-27

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee