DE4335457A1 - Verfahren zur Bildung eines Gate-Isolationsfilms einer Halbleitervorrichtung - Google Patents
Verfahren zur Bildung eines Gate-Isolationsfilms einer HalbleitervorrichtungInfo
- Publication number
- DE4335457A1 DE4335457A1 DE4335457A DE4335457A DE4335457A1 DE 4335457 A1 DE4335457 A1 DE 4335457A1 DE 4335457 A DE4335457 A DE 4335457A DE 4335457 A DE4335457 A DE 4335457A DE 4335457 A1 DE4335457 A1 DE 4335457A1
- Authority
- DE
- Germany
- Prior art keywords
- film
- oxide film
- nitriding
- gate insulation
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 19
- 239000010703 silicon Substances 0.000 title claims abstract description 19
- 238000005121 nitriding Methods 0.000 title claims abstract description 11
- 238000009413 insulation Methods 0.000 title claims abstract description 9
- 230000015572 biosynthetic process Effects 0.000 title abstract description 3
- 150000004767 nitrides Chemical class 0.000 title abstract 2
- 238000000034 method Methods 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 238000000280 densification Methods 0.000 claims abstract description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims abstract description 3
- 238000000137 annealing Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 238000007596 consolidation process Methods 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 238000010405 reoxidation reaction Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005496 tempering Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920019239A KR960002066B1 (ko) | 1992-10-20 | 1992-10-20 | 옥시 나이트라이드 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE4335457A1 true DE4335457A1 (de) | 1994-04-21 |
Family
ID=19341412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4335457A Ceased DE4335457A1 (de) | 1992-10-20 | 1993-10-18 | Verfahren zur Bildung eines Gate-Isolationsfilms einer Halbleitervorrichtung |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH06209009A (enrdf_load_stackoverflow) |
| KR (1) | KR960002066B1 (enrdf_load_stackoverflow) |
| DE (1) | DE4335457A1 (enrdf_load_stackoverflow) |
| TW (1) | TW228613B (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5103478B2 (ja) | 2007-09-10 | 2012-12-19 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置の製造方法 |
| JP4902716B2 (ja) | 2008-11-20 | 2012-03-21 | 株式会社日立国際電気 | 不揮発性半導体記憶装置およびその製造方法 |
-
1992
- 1992-10-20 KR KR1019920019239A patent/KR960002066B1/ko not_active Expired - Fee Related
-
1993
- 1993-10-15 TW TW082108570A patent/TW228613B/zh active
- 1993-10-18 DE DE4335457A patent/DE4335457A1/de not_active Ceased
- 1993-10-20 JP JP5284230A patent/JPH06209009A/ja active Pending
Non-Patent Citations (8)
| Title |
|---|
| et.al.: Characteristics of Thermal Si- licon Nitride Films Grown in Argon-Diluted Ammo- nia. In: Analytical Chemistry, 1987, H.7., S.1799-1802 * |
| et.al.: Improved ultrathin oxynitri-de formed by thermal nitridation and low pressure chemical vapor deposition process. In: Appl.Phys. Lett., 61, 15, 12. Oct. 1992, S.1790-1792 * |
| et.al.: Nitridation and Post-Ni-tridation Anneals of SiO¶2¶ for Ultrathin Dielec- trics. In: IEEE Transactions on Electron Devices, Vol.37, No.8, Aug.1990, S.1836-1841 * |
| MAITI, Bikas * |
| MOSLEHI, Mehrdad M. * |
| SARASWAT, Krishna C.: ThermalNitridation of Si and SiO¶2¶ for VLSI. In: IEEE Journal of Solid-State Circuits, Vol.SC-20,No.1, Feb.1985, S.26-43 * |
| SUN, S.W. * |
| WRIGHT, Peter J. * |
Also Published As
| Publication number | Publication date |
|---|---|
| KR940010209A (ko) | 1994-05-24 |
| JPH06209009A (ja) | 1994-07-26 |
| TW228613B (enrdf_load_stackoverflow) | 1994-08-21 |
| KR960002066B1 (ko) | 1996-02-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OR8 | Request for search as to paragraph 43 lit. 1 sentence 1 patent law | ||
| 8105 | Search report available | ||
| 8110 | Request for examination paragraph 44 | ||
| 8131 | Rejection |