DE4118847A1 - Halbleiterspeicheranordnung mit ferroelektrischem kondensator - Google Patents
Halbleiterspeicheranordnung mit ferroelektrischem kondensatorInfo
- Publication number
- DE4118847A1 DE4118847A1 DE4118847A DE4118847A DE4118847A1 DE 4118847 A1 DE4118847 A1 DE 4118847A1 DE 4118847 A DE4118847 A DE 4118847A DE 4118847 A DE4118847 A DE 4118847A DE 4118847 A1 DE4118847 A1 DE 4118847A1
- Authority
- DE
- Germany
- Prior art keywords
- lines
- line
- memory cell
- driver
- bit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 204
- 239000011159 matrix material Substances 0.000 title claims description 11
- 230000015654 memory Effects 0.000 claims abstract description 379
- 239000003990 capacitor Substances 0.000 claims description 131
- 239000000758 substrate Substances 0.000 claims description 82
- 238000000034 method Methods 0.000 claims description 56
- 230000004913 activation Effects 0.000 claims description 25
- 230000003213 activating effect Effects 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract description 10
- 230000008901 benefit Effects 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 description 349
- 238000010586 diagram Methods 0.000 description 52
- 239000010410 layer Substances 0.000 description 38
- 230000002093 peripheral effect Effects 0.000 description 32
- 230000010287 polarization Effects 0.000 description 15
- 230000002829 reductive effect Effects 0.000 description 15
- 238000003860 storage Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000008859 change Effects 0.000 description 9
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000010276 construction Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 8
- 238000012856 packing Methods 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 230000002441 reversible effect Effects 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 210000000352 storage cell Anatomy 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 3
- 240000002834 Paulownia tomentosa Species 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000011017 operating method Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000001603 reducing effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- 101100008048 Caenorhabditis elegans cut-4 gene Proteins 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/04—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using capacitive elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14856190A JP3156971B2 (ja) | 1990-06-08 | 1990-06-08 | 半導体記憶装置、半導体記憶装置の読み出し方法、及び半導体記憶装置の書き込み方法 |
| JP2184209A JPH0478098A (ja) | 1990-07-13 | 1990-07-13 | 半導体記憶装置の動作方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE4118847A1 true DE4118847A1 (de) | 1991-12-12 |
| DE4118847C2 DE4118847C2 (enExample) | 1993-08-05 |
Family
ID=26478711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4118847A Granted DE4118847A1 (de) | 1990-06-08 | 1991-06-07 | Halbleiterspeicheranordnung mit ferroelektrischem kondensator |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5400275A (enExample) |
| KR (1) | KR950013392B1 (enExample) |
| DE (1) | DE4118847A1 (enExample) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0598596A1 (en) * | 1992-11-17 | 1994-05-25 | Ramtron International Corporation | Non-volatile ferroelectric memory with folded bit lines and method of making same |
| US5467302A (en) * | 1992-12-02 | 1995-11-14 | Matsushita Electric Industrial Company, Ltd. | Semiconductor memory device |
| EP0721190A3 (en) * | 1995-01-04 | 1999-01-20 | Nec Corporation | Ferroelectric memory and method for controlling operation of the same |
| EP0767464A3 (en) * | 1995-09-08 | 1999-09-22 | Fujitsu Limited | Ferroelectric memory and method of reading out data from the ferroelectric memory |
| WO2000019442A1 (de) * | 1998-09-28 | 2000-04-06 | Infineon Technologies Ag | Integrierter speicher mit einem differentiellen leseverstärker |
| EP0944091A3 (en) * | 1998-02-24 | 2000-08-16 | Sharp Kabushiki Kaisha | Ferroelectric memory device |
| WO2000060602A1 (de) * | 1999-04-01 | 2000-10-12 | Infineon Technologies Ag | Integrierter ferroelektrischer speicher, dessen plattenleitungen vom spaltendecoder selektiert werden |
| EP0834913A4 (en) * | 1996-04-19 | 2001-09-05 | Matsushita Electronics Corp | SEMICONDUCTOR ARRANGEMENT |
| US6330636B1 (en) | 1999-01-29 | 2001-12-11 | Enhanced Memory Systems, Inc. | Double data rate synchronous dynamic random access memory device incorporating a static RAM cache per memory bank |
| DE19954845B4 (de) * | 1998-11-19 | 2006-10-12 | Hyundai Electronics Industries Co., Ltd., Ichon | Nichtflüchtige ferroelektrische Speicherzelle vom NAND-Typ, sowie nichtflüchtiger ferroelektrischer Speicher unter Verwendung einer solchen |
Families Citing this family (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5760432A (en) * | 1994-05-20 | 1998-06-02 | Kabushiki Kaisha Toshiba | Thin film strained layer ferroelectric capacitors |
| US6027947A (en) * | 1996-08-20 | 2000-02-22 | Ramtron International Corporation | Partially or completely encapsulated top electrode of a ferroelectric capacitor |
| KR100224673B1 (ko) * | 1996-12-13 | 1999-10-15 | 윤종용 | 불휘발성 강유전체 메모리장치 및 그의 구동방법 |
| US6097624A (en) | 1997-09-17 | 2000-08-01 | Samsung Electronics Co., Ltd. | Methods of operating ferroelectric memory devices having reconfigurable bit lines |
| KR100297874B1 (ko) * | 1997-09-08 | 2001-10-24 | 윤종용 | 강유전체랜덤액세스메모리장치 |
| KR100247934B1 (ko) | 1997-10-07 | 2000-03-15 | 윤종용 | 강유전체 램 장치 및 그 제조방법 |
| US6002634A (en) * | 1997-11-14 | 1999-12-14 | Ramtron International Corporation | Sense amplifier latch driver circuit for a 1T/1C ferroelectric memory |
| US20050122765A1 (en) * | 1997-11-14 | 2005-06-09 | Allen Judith E. | Reference cell configuration for a 1T/1C ferroelectric memory |
| US5969980A (en) * | 1997-11-14 | 1999-10-19 | Ramtron International Corporation | Sense amplifier configuration for a 1T/1C ferroelectric memory |
| US5995406A (en) * | 1997-11-14 | 1999-11-30 | Ramtron International Corporation | Plate line segmentation in a 1T/1C ferroelectric memory |
| US6028783A (en) | 1997-11-14 | 2000-02-22 | Ramtron International Corporation | Memory cell configuration for a 1T/1C ferroelectric memory |
| US5956266A (en) * | 1997-11-14 | 1999-09-21 | Ramtron International Corporation | Reference cell for a 1T/1C ferroelectric memory |
| US5892728A (en) * | 1997-11-14 | 1999-04-06 | Ramtron International Corporation | Column decoder configuration for a 1T/1C ferroelectric memory |
| US5986919A (en) * | 1997-11-14 | 1999-11-16 | Ramtron International Corporation | Reference cell configuration for a 1T/1C ferroelectric memory |
| US5978251A (en) * | 1997-11-14 | 1999-11-02 | Ramtron International Corporation | Plate line driver circuit for a 1T/1C ferroelectric memory |
| US5880989A (en) * | 1997-11-14 | 1999-03-09 | Ramtron International Corporation | Sensing methodology for a 1T/1C ferroelectric memory |
| DE19830569C1 (de) * | 1998-07-08 | 1999-11-18 | Siemens Ag | FeRAM-Anordnung |
| US6201730B1 (en) | 1999-06-01 | 2001-03-13 | Infineon Technologies North America Corp. | Sensing of memory cell via a plateline |
| US6137711A (en) * | 1999-06-17 | 2000-10-24 | Agilent Technologies Inc. | Ferroelectric random access memory device including shared bit lines and fragmented plate lines |
| US6275408B1 (en) * | 1999-06-30 | 2001-08-14 | Texas Instruments Incorporated | Ferroelectric memory and method |
| DE19944036C2 (de) | 1999-09-14 | 2003-04-17 | Infineon Technologies Ag | Integrierter Speicher mit wenigstens zwei Plattensegmenten |
| KR100417824B1 (ko) * | 1999-12-23 | 2004-02-05 | 엘지전자 주식회사 | 코드분할다중접속 패킷 데이터 시스템에서의 채널 동적 할당 방법 |
| US6226216B1 (en) * | 2000-01-21 | 2001-05-01 | Intel Corporation | Sectional column activated memory |
| JP3784229B2 (ja) | 2000-01-21 | 2006-06-07 | シャープ株式会社 | 不揮発性半導体記憶装置およびそれを用いたシステムｌｓｉ |
| DE10008243B4 (de) * | 2000-02-23 | 2005-09-22 | Infineon Technologies Ag | Integrierter Speicher mit Plattenleitungssegmenten |
| US6335899B1 (en) * | 2000-04-19 | 2002-01-01 | Lsi Logic Corporation | Compensation capacitance for minimizing bit line coupling in multiport memory |
| US6566698B2 (en) * | 2000-05-26 | 2003-05-20 | Sony Corporation | Ferroelectric-type nonvolatile semiconductor memory and operation method thereof |
| JP3913451B2 (ja) | 2000-08-23 | 2007-05-09 | 株式会社東芝 | 半導体記憶装置 |
| US6421269B1 (en) * | 2000-10-17 | 2002-07-16 | Intel Corporation | Low-leakage MOS planar capacitors for use within DRAM storage cells |
| US6466473B2 (en) | 2001-03-30 | 2002-10-15 | Intel Corporation | Method and apparatus for increasing signal to sneak ratio in polarizable cross-point matrix memory arrays |
| US6920059B2 (en) * | 2002-11-29 | 2005-07-19 | Infineon Technologies Aktiengesellschaft | Reducing effects of noise coupling in integrated circuits with memory arrays |
| JP4058045B2 (ja) * | 2005-01-05 | 2008-03-05 | 株式会社東芝 | 半導体記憶装置 |
| JP2006344289A (ja) * | 2005-06-08 | 2006-12-21 | Toshiba Corp | 強誘電体記憶装置 |
| JP4887853B2 (ja) * | 2006-03-17 | 2012-02-29 | 富士通セミコンダクター株式会社 | 半導体記憶装置 |
| JP2008108417A (ja) * | 2006-10-23 | 2008-05-08 | Hynix Semiconductor Inc | 低電力ｄｒａｍ及びその駆動方法 |
| US9092582B2 (en) | 2010-07-09 | 2015-07-28 | Cypress Semiconductor Corporation | Low power, low pin count interface for an RFID transponder |
| US9846664B2 (en) | 2010-07-09 | 2017-12-19 | Cypress Semiconductor Corporation | RFID interface and interrupt |
| US8723654B2 (en) | 2010-07-09 | 2014-05-13 | Cypress Semiconductor Corporation | Interrupt generation and acknowledgment for RFID |
| US9135998B2 (en) * | 2010-11-09 | 2015-09-15 | Micron Technology, Inc. | Sense operation flags in a memory device |
| US9324405B2 (en) * | 2010-11-30 | 2016-04-26 | Radiant Technologies, Inc. | CMOS analog memories utilizing ferroelectric capacitors |
| US8811057B1 (en) * | 2013-03-04 | 2014-08-19 | Texas Instruments Incorporated | Power reduction circuit and method |
| US9236107B1 (en) * | 2014-07-03 | 2016-01-12 | Texas Instruments Incorporated | FRAM cell with cross point access |
| KR102314663B1 (ko) | 2016-08-31 | 2021-10-21 | 마이크론 테크놀로지, 인크. | 2 트랜지스터-1 커패시터 메모리를 포함하고 이를 액세스하기 위한 장치 및 방법 |
| WO2018044486A1 (en) | 2016-08-31 | 2018-03-08 | Micron Technology, Inc. | Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory |
| WO2018044485A1 (en) | 2016-08-31 | 2018-03-08 | Micron Technology, Inc. | Ferroelectric memory cells |
| WO2018044487A1 (en) | 2016-08-31 | 2018-03-08 | Micron Technology, Inc. | Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory |
| US10552258B2 (en) * | 2016-09-16 | 2020-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and driving method thereof |
| US10867675B2 (en) | 2017-07-13 | 2020-12-15 | Micron Technology, Inc. | Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells |
| CN109904229A (zh) * | 2017-12-08 | 2019-06-18 | 萨摩亚商费洛储存科技股份有限公司 | 垂直式铁电薄膜储存晶体管和资料写入及读出方法 |
| CN112652340B (zh) * | 2020-12-10 | 2022-05-20 | 光华临港工程应用技术研发(上海)有限公司 | 铁电存储器及其存储数据读取方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0293798A2 (en) * | 1987-06-02 | 1988-12-07 | National Semiconductor Corporation | Non-volatile memory ciruit using ferroelectric capacitor storage element |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4873664A (en) * | 1987-02-12 | 1989-10-10 | Ramtron Corporation | Self restoring ferroelectric memory |
| US4893272A (en) * | 1988-04-22 | 1990-01-09 | Ramtron Corporation | Ferroelectric retention method |
| US5136534A (en) * | 1989-06-30 | 1992-08-04 | Texas Instruments Incorporated | Method and apparatus for a filament channel pass gate ferroelectric capacitor memory cell |
| US5121353A (en) * | 1989-07-06 | 1992-06-09 | Kabushiki Kaisha Toshiba | Ferroelectric capacitor memory circuit MOS setting and transmission transistor |
| US5086412A (en) * | 1990-11-21 | 1992-02-04 | National Semiconductor Corporation | Sense amplifier and method for ferroelectric memory |
-
1991
- 1991-06-07 DE DE4118847A patent/DE4118847A1/de active Granted
- 1991-06-07 US US07/712,092 patent/US5400275A/en not_active Expired - Lifetime
- 1991-06-08 KR KR1019910009455A patent/KR950013392B1/ko not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0293798A2 (en) * | 1987-06-02 | 1988-12-07 | National Semiconductor Corporation | Non-volatile memory ciruit using ferroelectric capacitor storage element |
Non-Patent Citations (1)
| Title |
|---|
| IEEE Journal of Solid-State Circuits, Vol. 24, No. 5, Oktober 1989, S. 1206-1212 * |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0598596A1 (en) * | 1992-11-17 | 1994-05-25 | Ramtron International Corporation | Non-volatile ferroelectric memory with folded bit lines and method of making same |
| US5371699A (en) * | 1992-11-17 | 1994-12-06 | Ramtron International Corporation | Non-volatile ferroelectric memory with folded bit lines and method of making the same |
| US5467302A (en) * | 1992-12-02 | 1995-11-14 | Matsushita Electric Industrial Company, Ltd. | Semiconductor memory device |
| EP0600434A3 (en) * | 1992-12-02 | 1996-06-05 | Matsushita Electric Industrial Co Ltd | Semiconductor memory device. |
| EP0721190A3 (en) * | 1995-01-04 | 1999-01-20 | Nec Corporation | Ferroelectric memory and method for controlling operation of the same |
| EP0767464A3 (en) * | 1995-09-08 | 1999-09-22 | Fujitsu Limited | Ferroelectric memory and method of reading out data from the ferroelectric memory |
| EP0834913A4 (en) * | 1996-04-19 | 2001-09-05 | Matsushita Electronics Corp | SEMICONDUCTOR ARRANGEMENT |
| EP0944091A3 (en) * | 1998-02-24 | 2000-08-16 | Sharp Kabushiki Kaisha | Ferroelectric memory device |
| WO2000019442A1 (de) * | 1998-09-28 | 2000-04-06 | Infineon Technologies Ag | Integrierter speicher mit einem differentiellen leseverstärker |
| US6351422B2 (en) | 1998-09-28 | 2002-02-26 | Infineon Technologies Ag | Integrated memory having a differential sense amplifier |
| DE19954845B4 (de) * | 1998-11-19 | 2006-10-12 | Hyundai Electronics Industries Co., Ltd., Ichon | Nichtflüchtige ferroelektrische Speicherzelle vom NAND-Typ, sowie nichtflüchtiger ferroelektrischer Speicher unter Verwendung einer solchen |
| DE19964480B4 (de) * | 1998-11-19 | 2008-08-28 | Hyundai Electronics Industries Co., Ltd., Ichon | Verfahren zum Herstellen einer nichtflüchtigen ferroelektrischen Speicherzelle vom NAND-Typ |
| US6330636B1 (en) | 1999-01-29 | 2001-12-11 | Enhanced Memory Systems, Inc. | Double data rate synchronous dynamic random access memory device incorporating a static RAM cache per memory bank |
| WO2000060602A1 (de) * | 1999-04-01 | 2000-10-12 | Infineon Technologies Ag | Integrierter ferroelektrischer speicher, dessen plattenleitungen vom spaltendecoder selektiert werden |
| US6430080B1 (en) | 1999-04-01 | 2002-08-06 | Infineon Technologies Ag | Integrated ferroelectric memory having plate lines selected by a column decoder |
Also Published As
| Publication number | Publication date |
|---|---|
| KR920001549A (ko) | 1992-01-30 |
| US5400275A (en) | 1995-03-21 |
| DE4118847C2 (enExample) | 1993-08-05 |
| KR950013392B1 (ko) | 1995-11-08 |
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