DE4017966C2 - Verwendung elementorganischer Verbindungen zur Abscheidung aus der Gasphase - Google Patents
Verwendung elementorganischer Verbindungen zur Abscheidung aus der GasphaseInfo
- Publication number
- DE4017966C2 DE4017966C2 DE4017966A DE4017966A DE4017966C2 DE 4017966 C2 DE4017966 C2 DE 4017966C2 DE 4017966 A DE4017966 A DE 4017966A DE 4017966 A DE4017966 A DE 4017966A DE 4017966 C2 DE4017966 C2 DE 4017966C2
- Authority
- DE
- Germany
- Prior art keywords
- compounds
- gas phase
- deposition
- formula
- iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 150000002894 organic compounds Chemical class 0.000 title claims description 5
- 238000000926 separation method Methods 0.000 title description 4
- 150000001875 compounds Chemical class 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 13
- -1 R = H Chemical group 0.000 claims description 9
- 229910052785 arsenic Inorganic materials 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 7
- 150000002902 organometallic compounds Chemical class 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 229910052787 antimony Chemical group 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 5
- 238000005137 deposition process Methods 0.000 claims description 5
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 5
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 4
- QUPDWYMUPZLYJZ-UHFFFAOYSA-N ethyl Chemical group C[CH2] QUPDWYMUPZLYJZ-UHFFFAOYSA-N 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- 125000000158 eta(5)-cyclopentadienyl group Chemical group [H]C12C3([H])C4([H])C5([H])C1([H])*2345 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 125000000555 isopropenyl group Chemical group [H]\C([H])=C(\*)C([H])([H])[H] 0.000 claims description 2
- ORGHESHFQPYLAO-UHFFFAOYSA-N vinyl radical Chemical group C=[CH] ORGHESHFQPYLAO-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 description 13
- 239000012071 phase Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 7
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 5
- 239000007983 Tris buffer Substances 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 5
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 5
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 4
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001741 metal-organic molecular beam epitaxy Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 229910000074 antimony hydride Inorganic materials 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000001182 laser chemical vapour deposition Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- OUULRIDHGPHMNQ-UHFFFAOYSA-N stibane Chemical compound [SbH3] OUULRIDHGPHMNQ-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical compound Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000012442 inert solvent Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QSLGKGJRFUIAEG-UHFFFAOYSA-N n-[bis(dimethylamino)arsanyl]-n-methylmethanamine Chemical compound CN(C)[As](N(C)C)N(C)C QSLGKGJRFUIAEG-UHFFFAOYSA-N 0.000 description 1
- XVDBWWRIXBMVJV-UHFFFAOYSA-N n-[bis(dimethylamino)phosphanyl]-n-methylmethanamine Chemical compound CN(C)P(N(C)C)N(C)C XVDBWWRIXBMVJV-UHFFFAOYSA-N 0.000 description 1
- ZUSRFDBQZSPBDV-UHFFFAOYSA-N n-[bis(dimethylamino)stibanyl]-n-methylmethanamine Chemical compound CN(C)[Sb](N(C)C)N(C)C ZUSRFDBQZSPBDV-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/90—Antimony compounds
- C07F9/902—Compounds without antimony-carbon linkages
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/06—Phosphorus compounds without P—C bonds
- C07F9/22—Amides of acids of phosphorus
- C07F9/224—Phosphorus triamides
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/66—Arsenic compounds
- C07F9/68—Arsenic compounds without As—C bonds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4017966A DE4017966C2 (de) | 1990-06-05 | 1990-06-05 | Verwendung elementorganischer Verbindungen zur Abscheidung aus der Gasphase |
| ES91109099T ES2068429T3 (es) | 1990-06-05 | 1991-06-04 | Compuestos de elementos organicos para su utilizacion en el sector electronico. |
| EP91109099A EP0460598B1 (de) | 1990-06-05 | 1991-06-04 | Elementorganische Verbindungen zur Verwendung im elektronischen Bereich |
| JP3509506A JPH05500372A (ja) | 1990-06-05 | 1991-06-05 | 無機元素含有有機化合物 |
| KR1019920700154A KR920702442A (ko) | 1990-06-05 | 1991-06-05 | 전자분야에 사용하기 위한 유기원소화합물 |
| PCT/DE1991/000471 WO1991019028A1 (de) | 1990-06-05 | 1991-06-05 | Elementorganische verbindungen zur verwendung im elektronischen bereich |
| TW080104400A TW260804B (show.php) | 1990-06-05 | 1991-06-25 | |
| GR950400294T GR3015256T3 (en) | 1990-06-05 | 1995-03-02 | Organic compounds for application in the field of electronics. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4017966A DE4017966C2 (de) | 1990-06-05 | 1990-06-05 | Verwendung elementorganischer Verbindungen zur Abscheidung aus der Gasphase |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE4017966A1 DE4017966A1 (de) | 1991-12-12 |
| DE4017966C2 true DE4017966C2 (de) | 1996-05-30 |
Family
ID=6407803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4017966A Expired - Fee Related DE4017966C2 (de) | 1990-06-05 | 1990-06-05 | Verwendung elementorganischer Verbindungen zur Abscheidung aus der Gasphase |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP0460598B1 (show.php) |
| JP (1) | JPH05500372A (show.php) |
| KR (1) | KR920702442A (show.php) |
| DE (1) | DE4017966C2 (show.php) |
| ES (1) | ES2068429T3 (show.php) |
| GR (1) | GR3015256T3 (show.php) |
| TW (1) | TW260804B (show.php) |
| WO (1) | WO1991019028A1 (show.php) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4214224A1 (de) * | 1992-04-30 | 1993-11-04 | Merck Patent Gmbh | Verwendung von elementorganischen verbindungen zur abscheidung des elementes auf substraten |
| MY112170A (en) * | 1994-09-02 | 2001-04-30 | Sec Dep For Defence Acting Through His Defence Evaluation And Research Agency United Kingdom | Metalorganic compounds |
| JP6202798B2 (ja) * | 2011-10-12 | 2017-09-27 | エーエスエム インターナショナル エヌ．ヴェー．Ａｓｍ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． | 酸化アンチモン膜の原子層堆積 |
| JP6210828B2 (ja) * | 2013-10-04 | 2017-10-11 | 株式会社Adeka | 薄膜形成用原料、薄膜の製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1438745A (fr) * | 1964-07-10 | 1966-05-13 | Rohm & Haas | Procédé de fabrication de dimères et trimères d'acrylates |
| DE1287571B (de) * | 1966-02-21 | 1969-01-23 | Frhr Von Hirsch Hubert | Verfahren zur Herstellung von Enaminen |
| DE3172368D1 (en) * | 1980-11-18 | 1985-10-24 | British Telecomm | Improvements in the manufacture of group iiib-vb compounds |
| GB2162862B (en) * | 1984-07-26 | 1988-10-19 | Japan Res Dev Corp | A method of growing a thin film single crystalline semiconductor |
| WO1986003228A1 (en) * | 1984-11-20 | 1986-06-05 | Hughes Aircraft Company | Method for deposition of gallium arsenide from vapor phase gallium-arsenic complexes |
| EP0296257A1 (en) * | 1987-06-22 | 1988-12-28 | American Cyanamid Company | Branched monoalkyl group V A compounds as MOCVD element sources |
| DE3868875D1 (de) * | 1987-11-30 | 1992-04-09 | Daido Oxygen | Apparat zur produktion von halbleitern. |
| DE3812180A1 (de) * | 1988-04-13 | 1989-10-26 | Preussag Pure Metals Gmbh | Metallorganische verbindungen zur verwendung im elektronischen bereich |
| DE3841643C2 (de) * | 1988-12-10 | 1999-07-01 | Merck Patent Gmbh | Metallorganische Verbindungen und deren Verwendung |
| DE3842161A1 (de) * | 1988-12-15 | 1990-06-28 | Preussag Pure Metals Gmbh | Hochreine alkyl- und arylphosphine fuer gasphasenepitaxie-prozesse |
-
1990
- 1990-06-05 DE DE4017966A patent/DE4017966C2/de not_active Expired - Fee Related
-
1991
- 1991-06-04 EP EP91109099A patent/EP0460598B1/de not_active Expired - Lifetime
- 1991-06-04 ES ES91109099T patent/ES2068429T3/es not_active Expired - Lifetime
- 1991-06-05 KR KR1019920700154A patent/KR920702442A/ko not_active Withdrawn
- 1991-06-05 JP JP3509506A patent/JPH05500372A/ja active Pending
- 1991-06-05 WO PCT/DE1991/000471 patent/WO1991019028A1/de not_active Ceased
- 1991-06-25 TW TW080104400A patent/TW260804B/zh active
-
1995
- 1995-03-02 GR GR950400294T patent/GR3015256T3/el unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW260804B (show.php) | 1995-10-21 |
| ES2068429T3 (es) | 1995-04-16 |
| KR920702442A (ko) | 1992-09-04 |
| EP0460598B1 (de) | 1995-03-01 |
| DE4017966A1 (de) | 1991-12-12 |
| GR3015256T3 (en) | 1995-06-30 |
| WO1991019028A1 (de) | 1991-12-12 |
| JPH05500372A (ja) | 1993-01-28 |
| EP0460598A1 (de) | 1991-12-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: C23C 16/18 |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |