GR3015256T3 - Organic compounds for application in the field of electronics. - Google Patents

Organic compounds for application in the field of electronics.

Info

Publication number
GR3015256T3
GR3015256T3 GR950400294T GR950400294T GR3015256T3 GR 3015256 T3 GR3015256 T3 GR 3015256T3 GR 950400294 T GR950400294 T GR 950400294T GR 950400294 T GR950400294 T GR 950400294T GR 3015256 T3 GR3015256 T3 GR 3015256T3
Authority
GR
Greece
Prior art keywords
electronics
application
field
organic compounds
compounds
Prior art date
Application number
GR950400294T
Other languages
Greek (el)
English (en)
Inventor
Michael Dr Zimmer
Original Assignee
Ppm Pure Metals Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ppm Pure Metals Gmbh filed Critical Ppm Pure Metals Gmbh
Publication of GR3015256T3 publication Critical patent/GR3015256T3/el

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/90—Antimony compounds
    • C07F9/902—Compounds without antimony-carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/06—Phosphorus compounds without P—C bonds
    • C07F9/22—Amides of acids of phosphorus
    • C07F9/224—Phosphorus triamides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/66—Arsenic compounds
    • C07F9/68—Arsenic compounds without As—C bonds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
GR950400294T 1990-06-05 1995-03-02 Organic compounds for application in the field of electronics. GR3015256T3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4017966A DE4017966C2 (de) 1990-06-05 1990-06-05 Verwendung elementorganischer Verbindungen zur Abscheidung aus der Gasphase

Publications (1)

Publication Number Publication Date
GR3015256T3 true GR3015256T3 (en) 1995-06-30

Family

ID=6407803

Family Applications (1)

Application Number Title Priority Date Filing Date
GR950400294T GR3015256T3 (en) 1990-06-05 1995-03-02 Organic compounds for application in the field of electronics.

Country Status (8)

Country Link
EP (1) EP0460598B1 (show.php)
JP (1) JPH05500372A (show.php)
KR (1) KR920702442A (show.php)
DE (1) DE4017966C2 (show.php)
ES (1) ES2068429T3 (show.php)
GR (1) GR3015256T3 (show.php)
TW (1) TW260804B (show.php)
WO (1) WO1991019028A1 (show.php)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4214224A1 (de) * 1992-04-30 1993-11-04 Merck Patent Gmbh Verwendung von elementorganischen verbindungen zur abscheidung des elementes auf substraten
MY112170A (en) * 1994-09-02 2001-04-30 Sec Dep For Defence Acting Through His Defence Evaluation And Research Agency United Kingdom Metalorganic compounds
JP6202798B2 (ja) * 2011-10-12 2017-09-27 エーエスエム インターナショナル エヌ．ヴェー．Ａｓｍ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． 酸化アンチモン膜の原子層堆積
JP6210828B2 (ja) * 2013-10-04 2017-10-11 株式会社Adeka 薄膜形成用原料、薄膜の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1438745A (fr) * 1964-07-10 1966-05-13 Rohm & Haas Procédé de fabrication de dimères et trimères d'acrylates
DE1287571B (de) * 1966-02-21 1969-01-23 Frhr Von Hirsch Hubert Verfahren zur Herstellung von Enaminen
DE3172368D1 (en) * 1980-11-18 1985-10-24 British Telecomm Improvements in the manufacture of group iiib-vb compounds
GB2162862B (en) * 1984-07-26 1988-10-19 Japan Res Dev Corp A method of growing a thin film single crystalline semiconductor
WO1986003228A1 (en) * 1984-11-20 1986-06-05 Hughes Aircraft Company Method for deposition of gallium arsenide from vapor phase gallium-arsenic complexes
EP0296257A1 (en) * 1987-06-22 1988-12-28 American Cyanamid Company Branched monoalkyl group V A compounds as MOCVD element sources
DE3868875D1 (de) * 1987-11-30 1992-04-09 Daido Oxygen Apparat zur produktion von halbleitern.
DE3812180A1 (de) * 1988-04-13 1989-10-26 Preussag Pure Metals Gmbh Metallorganische verbindungen zur verwendung im elektronischen bereich
DE3841643C2 (de) * 1988-12-10 1999-07-01 Merck Patent Gmbh Metallorganische Verbindungen und deren Verwendung
DE3842161A1 (de) * 1988-12-15 1990-06-28 Preussag Pure Metals Gmbh Hochreine alkyl- und arylphosphine fuer gasphasenepitaxie-prozesse

Also Published As

Publication number Publication date
TW260804B (show.php) 1995-10-21
ES2068429T3 (es) 1995-04-16
KR920702442A (ko) 1992-09-04
EP0460598B1 (de) 1995-03-01
DE4017966A1 (de) 1991-12-12
DE4017966C2 (de) 1996-05-30
WO1991019028A1 (de) 1991-12-12
JPH05500372A (ja) 1993-01-28
EP0460598A1 (de) 1991-12-11

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