DE4006158A1 - Verfahren zum erzeugen einer isolierten, einkristallinen siliziuminsel - Google Patents

Verfahren zum erzeugen einer isolierten, einkristallinen siliziuminsel

Info

Publication number
DE4006158A1
DE4006158A1 DE4006158A DE4006158A DE4006158A1 DE 4006158 A1 DE4006158 A1 DE 4006158A1 DE 4006158 A DE4006158 A DE 4006158A DE 4006158 A DE4006158 A DE 4006158A DE 4006158 A1 DE4006158 A1 DE 4006158A1
Authority
DE
Germany
Prior art keywords
layer
silicon
doping
trench
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE4006158A
Other languages
German (de)
English (en)
Other versions
DE4006158C2 (cg-RX-API-DMAC7.html
Inventor
Holger Dr Ing Vogt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung eV
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung eV filed Critical Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung eV
Priority to DE4042334A priority Critical patent/DE4042334C2/de
Priority to DE4006158A priority patent/DE4006158A1/de
Priority to DE59103366T priority patent/DE59103366D1/de
Priority to PCT/DE1991/000162 priority patent/WO1991013463A1/de
Priority to JP3504178A priority patent/JPH07105440B2/ja
Priority to EP91904136A priority patent/EP0517727B1/de
Priority to DE4127925A priority patent/DE4127925C2/de
Publication of DE4006158A1 publication Critical patent/DE4006158A1/de
Application granted granted Critical
Publication of DE4006158C2 publication Critical patent/DE4006158C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H10P30/209—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species in silicon to make buried insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1908—Preparing SOI wafers using silicon implanted buried insulating layers, e.g. oxide layers [SIMOX]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/021—Manufacture or treatment of air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20—Air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials

Landscapes

  • Element Separation (AREA)
DE4006158A 1990-02-27 1990-02-27 Verfahren zum erzeugen einer isolierten, einkristallinen siliziuminsel Granted DE4006158A1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE4042334A DE4042334C2 (de) 1990-02-27 1990-02-27 Verfahren zum Erzeugen einer isolierten, einkristallinen Siliziuminsel
DE4006158A DE4006158A1 (de) 1990-02-27 1990-02-27 Verfahren zum erzeugen einer isolierten, einkristallinen siliziuminsel
DE59103366T DE59103366D1 (de) 1990-02-27 1991-02-26 Verfahren zum erzeugen einer isolierten, einkristallinen siliziuminsel.
PCT/DE1991/000162 WO1991013463A1 (de) 1990-02-27 1991-02-26 Verfahren zum erzeugen einer isolierten, einkristallinen siliziuminsel
JP3504178A JPH07105440B2 (ja) 1990-02-27 1991-02-26 絶縁された単結晶シリコンアイランドの製法
EP91904136A EP0517727B1 (de) 1990-02-27 1991-02-26 Verfahren zum erzeugen einer isolierten, einkristallinen siliziuminsel
DE4127925A DE4127925C2 (de) 1990-02-27 1991-08-23 Verfahren zum Erzeugen einer isolierten, einkristallinen Siliziuminsel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4006158A DE4006158A1 (de) 1990-02-27 1990-02-27 Verfahren zum erzeugen einer isolierten, einkristallinen siliziuminsel

Publications (2)

Publication Number Publication Date
DE4006158A1 true DE4006158A1 (de) 1991-09-12
DE4006158C2 DE4006158C2 (cg-RX-API-DMAC7.html) 1992-03-12

Family

ID=6401063

Family Applications (2)

Application Number Title Priority Date Filing Date
DE4006158A Granted DE4006158A1 (de) 1990-02-27 1990-02-27 Verfahren zum erzeugen einer isolierten, einkristallinen siliziuminsel
DE59103366T Expired - Fee Related DE59103366D1 (de) 1990-02-27 1991-02-26 Verfahren zum erzeugen einer isolierten, einkristallinen siliziuminsel.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE59103366T Expired - Fee Related DE59103366D1 (de) 1990-02-27 1991-02-26 Verfahren zum erzeugen einer isolierten, einkristallinen siliziuminsel.

Country Status (4)

Country Link
EP (1) EP0517727B1 (cg-RX-API-DMAC7.html)
JP (1) JPH07105440B2 (cg-RX-API-DMAC7.html)
DE (2) DE4006158A1 (cg-RX-API-DMAC7.html)
WO (1) WO1991013463A1 (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4201910C2 (de) * 1991-11-29 1995-05-11 Fraunhofer Ges Forschung Verfahren zum Herstellen einer Halbleiterstruktur für eine integrierte Leistungsschaltung mit einem vertikalen Leistungsbauelement
US5457068A (en) * 1992-11-30 1995-10-10 Texas Instruments Incorporated Monolithic integration of microwave silicon devices and low loss transmission lines
GB2327146A (en) * 1997-07-10 1999-01-13 Ericsson Telefon Ab L M Thermal insulation of integrated circuit components
DE102010028044B4 (de) * 2010-04-21 2017-08-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Drucksensor und Verfahren zu dessen Herstellung
DE102017212437B3 (de) 2017-07-20 2018-12-20 Infineon Technologies Ag Verfahren zum Herstellen einer vergrabenen Hohlraumstruktur

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2451861A1 (de) * 1973-11-02 1975-05-15 Hitachi Ltd Integrierte halbleiterschaltungsbauelemente
US3897274A (en) * 1971-06-01 1975-07-29 Texas Instruments Inc Method of fabricating dielectrically isolated semiconductor structures
EP0167437B1 (fr) * 1984-06-14 1988-12-28 Commissariat A L'energie Atomique Procédé d'autopositionnement d'un oxyde de champ localisé par rapport à une tranchée d'isolement
EP0325161A2 (en) * 1988-01-21 1989-07-26 Fujitsu Limited Semiconductor device having trench isolation
EP0328331A2 (en) * 1988-02-08 1989-08-16 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3976511A (en) * 1975-06-30 1976-08-24 Ibm Corporation Method for fabricating integrated circuit structures with full dielectric isolation by ion bombardment
JPS62266875A (ja) * 1986-05-14 1987-11-19 Nippon Denso Co Ltd 半導体圧力センサ
KR910009318B1 (ko) * 1987-09-08 1991-11-09 미쓰비시 뎅끼 가부시기가이샤 반도체 장치의 제조 및 고내압 파묻음 절연막 형성방법
JPS6467935A (en) * 1987-09-08 1989-03-14 Mitsubishi Electric Corp Manufacture of semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3897274A (en) * 1971-06-01 1975-07-29 Texas Instruments Inc Method of fabricating dielectrically isolated semiconductor structures
DE2451861A1 (de) * 1973-11-02 1975-05-15 Hitachi Ltd Integrierte halbleiterschaltungsbauelemente
EP0167437B1 (fr) * 1984-06-14 1988-12-28 Commissariat A L'energie Atomique Procédé d'autopositionnement d'un oxyde de champ localisé par rapport à une tranchée d'isolement
EP0325161A2 (en) * 1988-01-21 1989-07-26 Fujitsu Limited Semiconductor device having trench isolation
EP0328331A2 (en) * 1988-02-08 1989-08-16 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Electronics, 26.11.87, S. 127-129 *

Also Published As

Publication number Publication date
EP0517727B1 (de) 1994-10-26
JPH05506749A (ja) 1993-09-30
WO1991013463A1 (de) 1991-09-05
JPH07105440B2 (ja) 1995-11-13
DE59103366D1 (de) 1994-12-01
DE4006158C2 (cg-RX-API-DMAC7.html) 1992-03-12
EP0517727A1 (de) 1992-12-16

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