DE3922563C2 - - Google Patents

Info

Publication number
DE3922563C2
DE3922563C2 DE3922563A DE3922563A DE3922563C2 DE 3922563 C2 DE3922563 C2 DE 3922563C2 DE 3922563 A DE3922563 A DE 3922563A DE 3922563 A DE3922563 A DE 3922563A DE 3922563 C2 DE3922563 C2 DE 3922563C2
Authority
DE
Germany
Prior art keywords
wafer
abrasives
wafers
abrasive
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3922563A
Other languages
German (de)
English (en)
Other versions
DE3922563A1 (de
Inventor
Sueo Sakata
Toshio Naritomi
Ysunori Saga Jp Oka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osaka Titanium Co Ltd
Original Assignee
Osaka Titanium Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osaka Titanium Co Ltd filed Critical Osaka Titanium Co Ltd
Publication of DE3922563A1 publication Critical patent/DE3922563A1/de
Application granted granted Critical
Publication of DE3922563C2 publication Critical patent/DE3922563C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/124—Preparing bulk and homogeneous wafers by processing the backside of the wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/024—Defect control-gettering and annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
DE3922563A 1988-07-11 1989-07-08 Verfahren zur herstellung eines halbleiter-wafers Granted DE3922563A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63173145A JPH0222822A (ja) 1988-07-11 1988-07-11 半導体基板の製造方法

Publications (2)

Publication Number Publication Date
DE3922563A1 DE3922563A1 (de) 1990-01-18
DE3922563C2 true DE3922563C2 (https=) 1991-11-07

Family

ID=15954945

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3922563A Granted DE3922563A1 (de) 1988-07-11 1989-07-08 Verfahren zur herstellung eines halbleiter-wafers

Country Status (3)

Country Link
US (1) US5051375A (https=)
JP (1) JPH0222822A (https=)
DE (1) DE3922563A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5401319A (en) * 1992-08-27 1995-03-28 Applied Materials, Inc. Lid and door for a vacuum chamber and pretreatment therefor
JP2719113B2 (ja) * 1994-05-24 1998-02-25 信越半導体株式会社 単結晶シリコンウェーハの歪付け方法
US5426061A (en) * 1994-09-06 1995-06-20 Midwest Research Institute Impurity gettering in semiconductors
JP3264367B2 (ja) * 1998-10-14 2002-03-11 信越半導体株式会社 サンドブラスト処理剤、それを用いて処理されたウェーハ及びその処理方法
US6406923B1 (en) * 2000-07-31 2002-06-18 Kobe Precision Inc. Process for reclaiming wafer substrates
JP5907797B2 (ja) * 2012-05-02 2016-04-26 株式会社ディスコ ウエーハの加工方法
CN119282926A (zh) * 2024-11-26 2025-01-10 浙江大学杭州国际科创中心 一种石英部件表面热性能的修复方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4038786A (en) * 1974-09-27 1977-08-02 Lockheed Aircraft Corporation Sandblasting with pellets of material capable of sublimation
JPS5338593A (en) * 1976-09-13 1978-04-08 Katsuji Shimizu Feed for culturing fishes
US4525239A (en) * 1984-04-23 1985-06-25 Hewlett-Packard Company Extrinsic gettering of GaAs wafers for MESFETS and integrated circuits
DE3738344A1 (de) * 1986-11-14 1988-05-26 Mitsubishi Electric Corp Anlage zum einfuehren von gitterstoerstellen und verfahren dazu
DE3844649C2 (https=) * 1987-06-23 1992-04-23 Taiyo Sanso Co. Ltd., Osaka, Jp

Also Published As

Publication number Publication date
DE3922563A1 (de) 1990-01-18
JPH0529307B2 (https=) 1993-04-30
US5051375A (en) 1991-09-24
JPH0222822A (ja) 1990-01-25

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee