DE3889597D1 - Ionen-Implantation in In-basierten III-V-Verbindungshalbleitern. - Google Patents

Ionen-Implantation in In-basierten III-V-Verbindungshalbleitern.

Info

Publication number
DE3889597D1
DE3889597D1 DE3889597T DE3889597T DE3889597D1 DE 3889597 D1 DE3889597 D1 DE 3889597D1 DE 3889597 T DE3889597 T DE 3889597T DE 3889597 T DE3889597 T DE 3889597T DE 3889597 D1 DE3889597 D1 DE 3889597D1
Authority
DE
Germany
Prior art keywords
ion implantation
compound semiconductors
based iii
iii
semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3889597T
Other languages
English (en)
Other versions
DE3889597T2 (de
Inventor
Kou-Wei Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of DE3889597D1 publication Critical patent/DE3889597D1/de
Application granted granted Critical
Publication of DE3889597T2 publication Critical patent/DE3889597T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/2656—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds characterised by the implantation of both electrically active and inactive species in the same semiconductor region to be doped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Light Receiving Elements (AREA)
DE3889597T 1987-07-29 1988-07-21 Ionen-Implantation in In-basierten III-V-Verbindungshalbleitern. Expired - Fee Related DE3889597T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/079,371 US4818721A (en) 1987-07-29 1987-07-29 Ion implantation into In-based group III-V compound semiconductors

Publications (2)

Publication Number Publication Date
DE3889597D1 true DE3889597D1 (de) 1994-06-23
DE3889597T2 DE3889597T2 (de) 1994-11-24

Family

ID=22150109

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3889597T Expired - Fee Related DE3889597T2 (de) 1987-07-29 1988-07-21 Ionen-Implantation in In-basierten III-V-Verbindungshalbleitern.

Country Status (6)

Country Link
US (1) US4818721A (de)
EP (1) EP0301762B1 (de)
JP (1) JPS6442816A (de)
KR (1) KR930002320B1 (de)
CA (1) CA1280222C (de)
DE (1) DE3889597T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2650704B1 (fr) * 1989-08-01 1994-05-06 Thomson Csf Procede de fabrication par epitaxie de couches monocristallines de materiaux a parametres de mailles differents
JPH0383332A (ja) * 1989-08-28 1991-04-09 Sharp Corp 炭化珪素半導体装置の製造方法
JPH04120732A (ja) * 1990-09-12 1992-04-21 Hitachi Ltd 固体素子及びその製造方法
US5482872A (en) * 1994-01-31 1996-01-09 Motorola, Inc. Method of forming isolation region in a compound semiconductor substrate
US5429963A (en) * 1994-04-25 1995-07-04 The United States Of America As Represented By The Secretary Of The Air Force Twin-tub complementary heterostructure field effect transistor fab process
US5565690A (en) * 1995-02-02 1996-10-15 Motorola, Inc. Method for doping strained heterojunction semiconductor devices and structure
JP2955983B2 (ja) * 1995-07-17 1999-10-04 日本電気株式会社 赤外線検出器の製造方法
FR2742864B1 (fr) * 1995-12-20 1998-03-13 Sgs Thomson Microelectronics Realisation d'un echantillon de reference pour appareil de caracterisation de doses implantees
US5766695A (en) * 1996-11-27 1998-06-16 Hughes Electronics Corporation Method for reducing surface layer defects in semiconductor materials having a volatile species
US6287946B1 (en) 1999-05-05 2001-09-11 Hrl Laboratories, Llc Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers
US7720570B2 (en) * 2004-10-01 2010-05-18 Redzone Robotics, Inc. Network architecture for remote robot with interchangeable tools
US7388236B2 (en) * 2006-03-29 2008-06-17 Cree, Inc. High efficiency and/or high power density wide bandgap transistors
FR2933684B1 (fr) * 2008-07-09 2011-05-06 Commissariat Energie Atomique Procede de purification d'un substrat en silicium cristallin et procede d'elaboration d'une cellule photovoltaique
US8941123B2 (en) * 2013-05-30 2015-01-27 International Business Machines Corporation Local interconnects by metal-III-V alloy wiring in semi-insulating III-V substrates
US11309412B1 (en) * 2017-05-17 2022-04-19 Northrop Grumman Systems Corporation Shifting the pinch-off voltage of an InP high electron mobility transistor with a metal ring
US10797225B2 (en) * 2018-09-18 2020-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Dual magnetic tunnel junction (DMTJ) stack design
CN112030200B (zh) * 2020-09-02 2022-12-09 扬州工业职业技术学院 一种钢带表面镉镀层的制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4385938A (en) * 1981-09-10 1983-05-31 The United States Of America As Represented By The Secretary Of The Air Force Dual species ion implantation into GaAs
FR2517120A1 (fr) * 1981-11-26 1983-05-27 Michel Salvi Procede de fabrication d'un composant semiconducteur par diffusion avec implantation ionique prealable et composant obtenu
US4494995A (en) * 1983-03-01 1985-01-22 The United States Of America As Represented By The Secretary Of The Navy Dual species ion implantation of ternary compounds based on In-Ga-As
US4555273A (en) * 1984-02-27 1985-11-26 The United States Of America As Represented By The Secretary Of The Navy Furnace transient anneal process
JPH0656837B2 (ja) * 1985-06-06 1994-07-27 日本電信電話株式会社 イオン注入による不純物導入法
DE3679947D1 (de) * 1985-08-26 1991-08-01 Toshiba Kawasaki Kk Halbleiteranordnungen und verfahren zur herstellung mittels ionenimplantation.
US4662060A (en) * 1985-12-13 1987-05-05 Allied Corporation Method of fabricating semiconductor device having low resistance non-alloyed contact layer

Also Published As

Publication number Publication date
KR930002320B1 (ko) 1993-03-29
DE3889597T2 (de) 1994-11-24
EP0301762A1 (de) 1989-02-01
EP0301762B1 (de) 1994-05-18
CA1280222C (en) 1991-02-12
US4818721A (en) 1989-04-04
JPS6442816A (en) 1989-02-15
KR890003044A (ko) 1989-04-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8339 Ceased/non-payment of the annual fee