DE3685374D1 - Ionenimplantierung. - Google Patents

Ionenimplantierung.

Info

Publication number
DE3685374D1
DE3685374D1 DE8686304646T DE3685374T DE3685374D1 DE 3685374 D1 DE3685374 D1 DE 3685374D1 DE 8686304646 T DE8686304646 T DE 8686304646T DE 3685374 T DE3685374 T DE 3685374T DE 3685374 D1 DE3685374 D1 DE 3685374D1
Authority
DE
Germany
Prior art keywords
ion implantation
implantation
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686304646T
Other languages
English (en)
Inventor
Johan Frans Prins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
De Beers Industrial Diamond Division Pty Ltd
Original Assignee
De Beers Industrial Diamond Division Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by De Beers Industrial Diamond Division Pty Ltd filed Critical De Beers Industrial Diamond Division Pty Ltd
Application granted granted Critical
Publication of DE3685374D1 publication Critical patent/DE3685374D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
DE8686304646T 1985-06-17 1986-06-17 Ionenimplantierung. Expired - Lifetime DE3685374D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ZA854552 1985-06-17
ZA855239 1985-07-11

Publications (1)

Publication Number Publication Date
DE3685374D1 true DE3685374D1 (de) 1992-06-25

Family

ID=27136312

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686304646T Expired - Lifetime DE3685374D1 (de) 1985-06-17 1986-06-17 Ionenimplantierung.

Country Status (4)

Country Link
EP (1) EP0209257B1 (de)
JP (1) JPH0639694B2 (de)
DE (1) DE3685374D1 (de)
IL (1) IL79107A (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2836790B2 (ja) * 1991-01-08 1998-12-14 株式会社神戸製鋼所 ダイヤモンド薄膜へのオーミック電極形成方法
JPH05102068A (ja) * 1991-10-11 1993-04-23 Kobe Steel Ltd ダイヤモンドを用いた電子デバイスの電極形成方法
ZA933939B (en) * 1992-06-05 1993-12-30 De Beers Ind Diamond Diamond doping
JP3296052B2 (ja) * 1993-10-12 2002-06-24 株式会社デンソー 不純物の活性化方法
US5609926A (en) * 1994-03-21 1997-03-11 Prins; Johan F. Diamond doping
JPH09106958A (ja) * 1995-06-23 1997-04-22 De Beers Ind Diamond Div Ltd 結晶基体のドーピング
JP2003500866A (ja) * 1999-05-31 2003-01-07 デ ビアス インダストリアル ダイアモンズ （プロプライエタリイ）リミテッド 結晶質基体へのドーピング
EP1895579B1 (de) 2005-06-20 2016-06-15 Nippon Telegraph And Telephone Corporation Diamanthalbleiterbauelement und herstellungsverfahren dafür
JP5155536B2 (ja) * 2006-07-28 2013-03-06 一般財団法人電力中央研究所 ＳｉＣ結晶の質を向上させる方法およびＳｉＣ半導体素子の製造方法
GB0819001D0 (en) 2008-10-16 2008-11-26 Diamond Detectors Ltd Contacts on diamond
US20130026492A1 (en) * 2011-07-30 2013-01-31 Akhan Technologies Inc. Diamond Semiconductor System and Method
RU2719611C1 (ru) * 2019-04-23 2020-04-21 Общество с ограниченной ответственностью "Микролазер" (ООО "Микролазер") Оптически проницаемая метка для маркировки драгоценных камней
DE102019117423A1 (de) * 2019-06-27 2020-12-31 Universität Leipzig Verfahren zur Erzeugung zumindest eines deterministischen Farbzentrums in einer Diamantschicht

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3317354A (en) * 1964-05-28 1967-05-02 Gen Electric Process for doping a diamond in a gaseous electrical discharge
DE3003285A1 (de) * 1980-01-30 1981-08-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen niederohmiger, einkristalliner metall- oder legierungsschichten auf substraten

Also Published As

Publication number Publication date
JPH0639694B2 (ja) 1994-05-25
IL79107A (en) 1989-03-31
EP0209257B1 (de) 1992-05-20
JPS61291973A (ja) 1986-12-22
EP0209257A1 (de) 1987-01-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee