DE3884188D1 - Silikon enthaltenes negatives photoresistmaterial und dessen verwendung zum herstellen von gemusterten oberflächen. - Google Patents

Silikon enthaltenes negatives photoresistmaterial und dessen verwendung zum herstellen von gemusterten oberflächen.

Info

Publication number
DE3884188D1
DE3884188D1 DE88906248T DE3884188T DE3884188D1 DE 3884188 D1 DE3884188 D1 DE 3884188D1 DE 88906248 T DE88906248 T DE 88906248T DE 3884188 T DE3884188 T DE 3884188T DE 3884188 D1 DE3884188 D1 DE 3884188D1
Authority
DE
Germany
Prior art keywords
material containing
photoresist material
negative photoresist
containing silicone
patterned surfaces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88906248T
Other languages
English (en)
Other versions
DE3884188T2 (de
Inventor
Diana Granger
Leroy Miller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of DE3884188D1 publication Critical patent/DE3884188D1/de
Publication of DE3884188T2 publication Critical patent/DE3884188T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
DE88906248T 1987-05-21 1988-04-13 Silikon enthaltenes negatives photoresistmaterial und dessen verwendung zum herstellen von gemusterten oberflächen. Expired - Fee Related DE3884188T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US5321787A 1987-05-21 1987-05-21

Publications (2)

Publication Number Publication Date
DE3884188D1 true DE3884188D1 (de) 1993-10-21
DE3884188T2 DE3884188T2 (de) 1994-03-03

Family

ID=21982704

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88906248T Expired - Fee Related DE3884188T2 (de) 1987-05-21 1988-04-13 Silikon enthaltenes negatives photoresistmaterial und dessen verwendung zum herstellen von gemusterten oberflächen.

Country Status (5)

Country Link
EP (1) EP0334906B1 (de)
JP (1) JPH02500152A (de)
KR (1) KR910005881B1 (de)
DE (1) DE3884188T2 (de)
WO (1) WO1988009527A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0503420A1 (de) * 1991-03-15 1992-09-16 Hoechst Aktiengesellschaft Amphiphile Polymere mit Silan-Einheiten und Film aus mindestens einer monomolekularen Schicht daraus
US7618574B2 (en) * 2005-07-14 2009-11-17 National Cheng Kung University Imprint lithography utilizing silated acidic polymers
US9505945B2 (en) * 2014-10-30 2016-11-29 Az Electronic Materials (Luxembourg) S.A.R.L. Silicon containing block copolymers for direct self-assembly application

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3272670A (en) * 1965-08-27 1966-09-13 Stanford Research Inst Two-stable, high-resolution electronactuated resists
JPS57202537A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Resist composition for dry development
US4551417A (en) * 1982-06-08 1985-11-05 Nec Corporation Method of forming patterns in manufacturing microelectronic devices
US4481049A (en) * 1984-03-02 1984-11-06 At&T Bell Laboratories Bilevel resist
JPS61151530A (ja) * 1984-12-26 1986-07-10 Kanto Kagaku Kk 電子線レジスト材料組成物
US4701342A (en) * 1986-03-06 1987-10-20 American Telephone And Telegraph Company, At&T Bell Laboratories Negative resist with oxygen plasma resistance
JPS6385538A (ja) * 1986-09-29 1988-04-16 Asahi Chem Ind Co Ltd 光硬化性積層体およびそれを用いた画像形成方法

Also Published As

Publication number Publication date
JPH02500152A (ja) 1990-01-18
WO1988009527A3 (en) 1988-12-15
WO1988009527A2 (en) 1988-12-01
DE3884188T2 (de) 1994-03-03
EP0334906A1 (de) 1989-10-04
KR890702082A (ko) 1989-12-22
EP0334906B1 (de) 1993-09-15
KR910005881B1 (ko) 1991-08-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee