DE68916143D1 - Siliziumhaltiges Polymer und solches enthaltendes photosensitives Material. - Google Patents

Siliziumhaltiges Polymer und solches enthaltendes photosensitives Material.

Info

Publication number
DE68916143D1
DE68916143D1 DE68916143T DE68916143T DE68916143D1 DE 68916143 D1 DE68916143 D1 DE 68916143D1 DE 68916143 T DE68916143 T DE 68916143T DE 68916143 T DE68916143 T DE 68916143T DE 68916143 D1 DE68916143 D1 DE 68916143D1
Authority
DE
Germany
Prior art keywords
silicon
same
photosensitive material
material containing
containing polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68916143T
Other languages
English (en)
Other versions
DE68916143T2 (de
Inventor
Akinobu Tanaka
Masazumi Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Tosoh Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Tosoh Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Tosoh Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE68916143D1 publication Critical patent/DE68916143D1/de
Publication of DE68916143T2 publication Critical patent/DE68916143T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/06—Preparatory processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/24—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen halogen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/26—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen nitrogen-containing groups
DE68916143T 1988-09-22 1989-09-22 Siliziumhaltiges Polymer und solches enthaltendes photosensitives Material. Expired - Fee Related DE68916143T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23629988 1988-09-22

Publications (2)

Publication Number Publication Date
DE68916143D1 true DE68916143D1 (de) 1994-07-21
DE68916143T2 DE68916143T2 (de) 1994-09-22

Family

ID=16998736

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68916143T Expired - Fee Related DE68916143T2 (de) 1988-09-22 1989-09-22 Siliziumhaltiges Polymer und solches enthaltendes photosensitives Material.

Country Status (4)

Country Link
US (1) US5057396A (de)
EP (1) EP0360274B1 (de)
KR (1) KR950000483B1 (de)
DE (1) DE68916143T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0432905B1 (de) * 1989-11-15 1998-02-04 Fujitsu Limited Polysilphenylensiloxan, Verfahren zu deren Herstellung, Resistmasse und Halbleitervorrichtungen
US5491203A (en) * 1994-09-08 1996-02-13 Showa Denko K. K. Polyorganosiloxane and process for producing the same
TW434458B (en) * 1995-04-04 2001-05-16 Shinetsu Chemical Co Chemically amplified positive resist compositions
US5962581A (en) * 1995-04-28 1999-10-05 Kabushiki Kaisha Toshiba Silicone polymer composition, method of forming a pattern and method of forming an insulating film
JP2697680B2 (ja) * 1995-05-31 1998-01-14 日本電気株式会社 珪素含有高分子化合物および感光性樹脂組成物
KR100463858B1 (ko) * 1996-08-29 2005-02-28 마츠시타 덴끼 산교 가부시키가이샤 층간절연막의형성방법
KR20030043264A (ko) * 2001-11-27 2003-06-02 박철홍 전자결핍성화합물과 특이반응하는 폴리치환된 실롤-저몰나노와이어 및 그 제조방법
KR100475080B1 (ko) * 2002-07-09 2005-03-10 삼성전자주식회사 Ｓｉ-콘테이닝 수용성 폴리머를 이용한 레지스트 패턴형성방법 및 반도체 소자의 제조방법
KR100979355B1 (ko) 2003-10-09 2010-08-31 삼성전자주식회사 다반응성 환형 실리케이트 화합물, 상기 화합물로부터제조된 실록산계 중합체 및 상기 중합체를 이용한 절연막제조방법
KR100510558B1 (ko) * 2003-12-13 2005-08-26 삼성전자주식회사 패턴 형성 방법
KR100640587B1 (ko) * 2004-09-23 2006-11-01 삼성전자주식회사 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법
US11500290B2 (en) * 2018-11-13 2022-11-15 International Business Machines Corporation Adhesion promoters

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1451623A (en) * 1973-10-01 1976-10-06 Mullard Ltd Method of prov8ding a patterned layer of silicon-containing oxide on a substrate
JPS51106196A (en) * 1975-03-17 1976-09-20 Toray Silicone Co Arukitsudojushino seizohoho
JPS5760330A (en) * 1980-09-27 1982-04-12 Fujitsu Ltd Resin composition
JPS59125730A (ja) * 1982-12-28 1984-07-20 Fujitsu Ltd ポジ型レジスト組成物
US4507384A (en) * 1983-04-18 1985-03-26 Nippon Telegraph & Telephone Public Corporation Pattern forming material and method for forming pattern therewith
JPS60238827A (ja) * 1984-05-14 1985-11-27 Nippon Telegr & Teleph Corp <Ntt> 感光性樹脂組成物
US4702990A (en) * 1984-05-14 1987-10-27 Nippon Telegraph And Telephone Corporation Photosensitive resin composition and process for forming photo-resist pattern using the same
JPS60254034A (ja) * 1984-05-30 1985-12-14 Fujitsu Ltd パタ−ン形成方法
DE3574418D1 (en) * 1984-05-30 1989-12-28 Fujitsu Ltd Pattern-forming material and its production and use
JPS61144639A (ja) * 1984-12-19 1986-07-02 Hitachi Ltd 放射線感応性組成物及びそれを用いたパタ−ン形成法
FR2597110A1 (fr) * 1986-04-14 1987-10-16 Rhone Poulenc Multi Tech Composition organopolysiloxane, potentiellement reticulable et utilisable notamment en microlithographie, et son procede d'application

Also Published As

Publication number Publication date
DE68916143T2 (de) 1994-09-22
KR900005224A (ko) 1990-04-13
KR950000483B1 (ko) 1995-01-20
US5057396A (en) 1991-10-15
EP0360274A3 (de) 1991-04-17
EP0360274A2 (de) 1990-03-28
EP0360274B1 (de) 1994-06-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee