DE3881928D1 - Integrierte schaltung zum treiben induktiver lasten. - Google Patents

Integrierte schaltung zum treiben induktiver lasten.

Info

Publication number
DE3881928D1
DE3881928D1 DE8888104635T DE3881928T DE3881928D1 DE 3881928 D1 DE3881928 D1 DE 3881928D1 DE 8888104635 T DE8888104635 T DE 8888104635T DE 3881928 T DE3881928 T DE 3881928T DE 3881928 D1 DE3881928 D1 DE 3881928D1
Authority
DE
Germany
Prior art keywords
integrated circuit
inductive loads
driving inductive
driving
loads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888104635T
Other languages
English (en)
Other versions
DE3881928T2 (de
Inventor
Marco Morelli
Fabio Marchio
Francesco Tricoli
Giampietro Maggioni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Publication of DE3881928D1 publication Critical patent/DE3881928D1/de
Application granted granted Critical
Publication of DE3881928T2 publication Critical patent/DE3881928T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/64—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors having inductive loads

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
DE88104635T 1987-03-31 1988-03-23 Integrierte Schaltung zum Treiben induktiver Lasten. Expired - Fee Related DE3881928T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8719921A IT1215402B (it) 1987-03-31 1987-03-31 Circuito integrato di pilotaggio di carichi induttivi riferiti a terra.

Publications (2)

Publication Number Publication Date
DE3881928D1 true DE3881928D1 (de) 1993-07-29
DE3881928T2 DE3881928T2 (de) 1993-10-07

Family

ID=11162350

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88104635T Expired - Fee Related DE3881928T2 (de) 1987-03-31 1988-03-23 Integrierte Schaltung zum Treiben induktiver Lasten.

Country Status (5)

Country Link
US (1) US4905067A (de)
EP (1) EP0284979B1 (de)
JP (1) JP2614076B2 (de)
DE (1) DE3881928T2 (de)
IT (1) IT1215402B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4998160A (en) * 1989-01-23 1991-03-05 Motorola, Inc. Substrate power supply contact for power integrated circuits
ATE171565T1 (de) * 1992-06-30 1998-10-15 St Microelectronics Srl Struktur zur vermeidung des durchschaltens einer parasitären diode, die sich in einer epitaktischen wanne von integrierten schaltungen befindet
DE4333359C2 (de) * 1993-06-26 2002-08-14 Bosch Gmbh Robert Monolithisch integrierte Leistungsendstufe
DE4411869C2 (de) * 1994-04-06 1997-05-15 Siemens Ag Schaltungsanordnung mit einer integrierten Treiberschaltungsanordnung
DE19518524C2 (de) * 1995-05-19 1997-03-20 Siemens Ag Schaltungsanordnung zur Verringerung einer Minoritätsträgerinjektion in ein Substrat
JP3513610B2 (ja) * 1996-04-19 2004-03-31 株式会社ルネサステクノロジ 半導体装置
JP3513609B2 (ja) * 1996-04-19 2004-03-31 株式会社ルネサステクノロジ 半導体装置
JP4128700B2 (ja) * 1999-09-08 2008-07-30 ローム株式会社 誘導性負荷駆動回路
US6346461B1 (en) * 2000-05-15 2002-02-12 The Regents Of The University Of California Electroless epitaxial etching for semiconductor applications
US6917095B1 (en) 2000-05-30 2005-07-12 Altera Corporation Integrated radio frequency circuits
CN1860669A (zh) 2003-09-30 2006-11-08 皇家飞利浦电子股份有限公司 用于集成vrm功率场效应晶体管的集成接口电路
KR101418396B1 (ko) * 2007-11-19 2014-07-10 페어차일드코리아반도체 주식회사 전력 반도체 소자
US9893724B2 (en) 2015-07-31 2018-02-13 Texas Instruments Incorporated Isolated output switching circuit
KR101841127B1 (ko) * 2017-08-10 2018-03-22 주식회사 애크멕스 반도체 스위치의 구동 장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE754677A (fr) * 1969-08-11 1971-01-18 Rca Corp Circuits integres fonctionnant sur courant
DE2407332A1 (de) * 1973-02-15 1974-09-05 Motorola Inc Integrierte schaltung
US3940785A (en) * 1974-05-06 1976-02-24 Sprague Electric Company Semiconductor I.C. with protection against reversed power supply
DE3507181A1 (de) * 1985-03-01 1986-09-04 IC - Haus GmbH, 6501 Bodenheim Schaltungsanordnung zur vermeidung parasitaerer substrat-effekte in integrierten schaltkreisen
FR2613131B1 (fr) * 1987-03-27 1989-07-28 Thomson Csf Circuit integre protege contre des surtensions

Also Published As

Publication number Publication date
EP0284979A2 (de) 1988-10-05
IT1215402B (it) 1990-02-08
JP2614076B2 (ja) 1997-05-28
US4905067A (en) 1990-02-27
JPS63265460A (ja) 1988-11-01
EP0284979A3 (en) 1990-06-13
IT8719921A0 (it) 1987-03-31
DE3881928T2 (de) 1993-10-07
EP0284979B1 (de) 1993-06-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: STMICROELECTRONICS S.R.L., AGRATE BRIANZA, MAILAND

8339 Ceased/non-payment of the annual fee