DE68923748D1 - Schaltung zum Treiben einer kapazitiven Last. - Google Patents

Schaltung zum Treiben einer kapazitiven Last.

Info

Publication number
DE68923748D1
DE68923748D1 DE68923748T DE68923748T DE68923748D1 DE 68923748 D1 DE68923748 D1 DE 68923748D1 DE 68923748 T DE68923748 T DE 68923748T DE 68923748 T DE68923748 T DE 68923748T DE 68923748 D1 DE68923748 D1 DE 68923748D1
Authority
DE
Germany
Prior art keywords
driving
circuit
capacitive load
capacitive
load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68923748T
Other languages
English (en)
Other versions
DE68923748T2 (de
Inventor
Mitsuhiko Okutsu
Kenji Abe
Tadaaki Kariya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Engineering Co Ltd
Hitachi Ltd
Original Assignee
Hitachi Engineering Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Engineering Co Ltd, Hitachi Ltd filed Critical Hitachi Engineering Co Ltd
Application granted granted Critical
Publication of DE68923748D1 publication Critical patent/DE68923748D1/de
Publication of DE68923748T2 publication Critical patent/DE68923748T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/735—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
DE68923748T 1988-09-20 1989-09-11 Schaltung zum Treiben einer kapazitiven Last. Expired - Lifetime DE68923748T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63233433A JP2664219B2 (ja) 1988-09-20 1988-09-20 駆動回路

Publications (2)

Publication Number Publication Date
DE68923748D1 true DE68923748D1 (de) 1995-09-14
DE68923748T2 DE68923748T2 (de) 1996-01-18

Family

ID=16954963

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68923748T Expired - Lifetime DE68923748T2 (de) 1988-09-20 1989-09-11 Schaltung zum Treiben einer kapazitiven Last.

Country Status (5)

Country Link
US (1) US5148049A (de)
EP (1) EP0360117B1 (de)
JP (1) JP2664219B2 (de)
DE (1) DE68923748T2 (de)
FI (1) FI98036C (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2953226B2 (ja) * 1992-12-11 1999-09-27 株式会社デンソー 基準電圧発生回路
US5852358A (en) * 1996-12-11 1998-12-22 The Texas A&M University System Capactive power circuit
WO1998026504A1 (en) * 1996-12-11 1998-06-18 The Texas A & M University System Capacitive power circuit
JP3006534B2 (ja) * 1997-03-31 2000-02-07 日本電気株式会社 半導体装置
JP4359959B2 (ja) * 1999-04-13 2009-11-11 株式会社デンソー 容量性負荷の駆動装置
US6376934B1 (en) 1999-08-18 2002-04-23 Sipex Corporation Voltage waveform generator
FR2803140B1 (fr) 1999-12-24 2002-05-31 St Microelectronics Sa Generateur analogique d'impulsions de tension
FR2889345A1 (fr) * 2005-04-04 2007-02-02 Thomson Licensing Sa Dispositif d'entretien pour panneau plasma

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1218316B (it) * 1982-03-17 1990-04-12 Ates Componenti Elettron Circuito di comando in commutazione di carichi induttivi,integrabile monolicamente,comprendente uno stadio finalein push-pull
DE3230741A1 (de) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Halbleiterschalter mit einem abschaltbaren thyristor
EP0140349B1 (de) * 1983-10-28 1992-01-02 Hitachi, Ltd. Halbleiterschaltvorrichtung
US4581542A (en) * 1983-11-14 1986-04-08 General Electric Company Driver circuits for emitter switch gate turn-off SCR devices
JPS60125015A (ja) * 1983-12-12 1985-07-04 Hitachi Ltd インバ−タ回路
JPS60208119A (ja) * 1984-03-30 1985-10-19 Hitachi Ltd 容量性負荷の駆動回路
US4598213A (en) * 1984-09-24 1986-07-01 Motorola, Inc. Bipolar transient driver
JP2571766B2 (ja) * 1986-04-30 1997-01-16 富士通株式会社 マトリクス表示パネル
JPH0795225B2 (ja) * 1986-09-11 1995-10-11 富士通株式会社 マトリツクス表示パネルの駆動回路
US4926065A (en) * 1987-11-17 1990-05-15 Applied Micro Circuits Corporation Method and apparatus for coupling an ECL output signal using a clamped capacitive bootstrap circuit
US4810903A (en) * 1987-12-14 1989-03-07 Motorola, Inc. BICMOS driver circuit including submicron on chip voltage source
JPH06100889B2 (ja) * 1987-12-21 1994-12-12 株式会社日立製作所 駆動回路
US4877980A (en) * 1988-03-10 1989-10-31 Advanced Micro Devices, Inc. Time variant drive circuit for high speed bus driver to limit oscillations or ringing on a bus
US4874970A (en) * 1988-05-11 1989-10-17 Applied Micro Circuits Corporation ECL output with Darlington or common collector-common emitter drive
FR2635930B1 (fr) * 1988-08-31 1990-11-23 Sgs Thomson Microelectronics Commutateur bidirectionnel monolithique a transistors mos de puissance

Also Published As

Publication number Publication date
JPH0282293A (ja) 1990-03-22
US5148049A (en) 1992-09-15
EP0360117A3 (de) 1991-05-08
EP0360117A2 (de) 1990-03-28
EP0360117B1 (de) 1995-08-09
DE68923748T2 (de) 1996-01-18
FI894456A0 (fi) 1989-09-20
FI98036C (fi) 1997-03-25
FI894456A (fi) 1990-03-21
JP2664219B2 (ja) 1997-10-15
FI98036B (fi) 1996-12-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition