DE3855095D1 - Verfahren zur Diffusion von Si in einen zusammengesetzten Halbleiter und Verbund-Halbleitervorrichtung - Google Patents

Verfahren zur Diffusion von Si in einen zusammengesetzten Halbleiter und Verbund-Halbleitervorrichtung

Info

Publication number
DE3855095D1
DE3855095D1 DE3855095T DE3855095T DE3855095D1 DE 3855095 D1 DE3855095 D1 DE 3855095D1 DE 3855095 T DE3855095 T DE 3855095T DE 3855095 T DE3855095 T DE 3855095T DE 3855095 D1 DE3855095 D1 DE 3855095D1
Authority
DE
Germany
Prior art keywords
diffusion
semiconductor device
composite
compound semiconductor
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3855095T
Other languages
English (en)
Other versions
DE3855095T2 (de
Inventor
Takashi C O Mitsubish Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE3855095D1 publication Critical patent/DE3855095D1/de
Publication of DE3855095T2 publication Critical patent/DE3855095T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258—Diffusion into or out of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/034—Diffusion of boron or silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Geometry (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Led Devices (AREA)
DE3855095T 1987-11-04 1988-10-31 Verfahren zur Diffusion von Si in einen zusammengesetzten Halbleiter und Verbund-Halbleitervorrichtung Expired - Fee Related DE3855095T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62278530A JPH0727873B2 (ja) 1987-11-04 1987-11-04 化合物半導体へのＳｉ拡散方法

Publications (2)

Publication Number Publication Date
DE3855095D1 true DE3855095D1 (de) 1996-04-18
DE3855095T2 DE3855095T2 (de) 1996-08-22

Family

ID=17598556

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3855095T Expired - Fee Related DE3855095T2 (de) 1987-11-04 1988-10-31 Verfahren zur Diffusion von Si in einen zusammengesetzten Halbleiter und Verbund-Halbleitervorrichtung

Country Status (4)

Country Link
US (2) US5047366A (de)
EP (1) EP0315387B1 (de)
JP (1) JPH0727873B2 (de)
DE (1) DE3855095T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5126281A (en) * 1990-09-11 1992-06-30 Hewlett-Packard Company Diffusion using a solid state source
JPH04199589A (ja) * 1990-11-28 1992-07-20 Mitsubishi Electric Corp 可視光面発光レーザ装置
FR2671238B1 (fr) * 1990-12-28 1993-03-12 Thomson Csf Procede de realisation de lasers semiconducteurs a emission de surface, et lasers obtenus par le procede.
EP0574827B1 (de) * 1992-06-13 1999-04-28 Sanyo Electric Co., Ltd. Dotierungsverfahren, Halbleiterbauelement und Verfahren zu seiner Herstellung
FR2718576B1 (fr) * 1994-04-06 1996-04-26 Alcatel Nv Procédé de décalage de longueur d'onde dans une structure semiconductrice à puits quantique.
JPH0878776A (ja) * 1994-09-06 1996-03-22 Fuji Xerox Co Ltd 半導体レーザ装置
US5821567A (en) * 1995-12-13 1998-10-13 Oki Electric Industry Co., Ltd. High-resolution light-sensing and light-emitting diode array
JP3181262B2 (ja) * 1998-06-04 2001-07-03 スタンレー電気株式会社 平面実装型ｌｅｄ素子およびその製造方法
JP3797151B2 (ja) * 2001-07-05 2006-07-12 ソニー株式会社 レーザダイオード、光学ピックアップ装置、光ディスク装置および光通信装置
US9368677B2 (en) * 2011-08-01 2016-06-14 Sandia Corporation Selective layer disordering in III-nitrides with a capping layer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197786A (ja) * 1982-03-10 1983-11-17 Hitachi Ltd 半導体装置の製造方法
JPS596586A (ja) * 1982-07-02 1984-01-13 Nec Corp 半導体レ−ザ
JPS59123288A (ja) * 1982-12-28 1984-07-17 Nec Corp ３−５族化合物半導体素子
JPS6129189A (ja) * 1984-07-19 1986-02-10 Sanyo Electric Co Ltd 半導体レ−ザ
US4731789A (en) * 1985-05-13 1988-03-15 Xerox Corporation Clad superlattice semiconductor laser
JPS62130581A (ja) * 1985-11-30 1987-06-12 Fujitsu Ltd 半導体レーザの製造方法
US4727556A (en) * 1985-12-30 1988-02-23 Xerox Corporation Semiconductor lasers fabricated from impurity induced disordering
JPH0719757B2 (ja) * 1987-08-05 1995-03-06 三菱電機株式会社 半導体素子の製造方法
US4830983A (en) * 1987-11-05 1989-05-16 Xerox Corporation Method of enhanced introduction of impurity species into a semiconductor structure from a deposited source and application thereof

Also Published As

Publication number Publication date
EP0315387A3 (en) 1989-08-30
US5119150A (en) 1992-06-02
JPH0727873B2 (ja) 1995-03-29
JPH01120816A (ja) 1989-05-12
DE3855095T2 (de) 1996-08-22
EP0315387A2 (de) 1989-05-10
EP0315387B1 (de) 1996-03-13
US5047366A (en) 1991-09-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee