DE3854540D1 - Behandlungsapparat und Verfahren. - Google Patents
Behandlungsapparat und Verfahren.Info
- Publication number
- DE3854540D1 DE3854540D1 DE3854540T DE3854540T DE3854540D1 DE 3854540 D1 DE3854540 D1 DE 3854540D1 DE 3854540 T DE3854540 T DE 3854540T DE 3854540 T DE3854540 T DE 3854540T DE 3854540 D1 DE3854540 D1 DE 3854540D1
- Authority
- DE
- Germany
- Prior art keywords
- procedure
- treatment apparatus
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Environmental & Geological Engineering (AREA)
- Toxicology (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/075,016 US4842686A (en) | 1987-07-17 | 1987-07-17 | Wafer processing apparatus and method |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3854540D1 true DE3854540D1 (de) | 1995-11-09 |
DE3854540T2 DE3854540T2 (de) | 1996-03-07 |
Family
ID=22123018
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3854540T Expired - Lifetime DE3854540T2 (de) | 1987-07-17 | 1988-06-23 | Behandlungsapparat und Verfahren. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4842686A (de) |
EP (1) | EP0300217B1 (de) |
JP (1) | JPH02146744A (de) |
KR (1) | KR970000202B1 (de) |
DE (1) | DE3854540T2 (de) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3735449A1 (de) * | 1987-10-20 | 1989-05-03 | Convac Gmbh | Fertigungssystem fuer halbleitersubstrate |
KR950034495A (ko) * | 1994-04-20 | 1995-12-28 | 윌리엄 이.힐러 | 반도체 장치 제조를 위한 고 수율 광 경화 공정 |
US5892886A (en) | 1996-02-02 | 1999-04-06 | Micron Technology, Inc. | Apparatus for uniform gas and radiant heat dispersion for solid state fabrication processes |
US5751896A (en) * | 1996-02-22 | 1998-05-12 | Micron Technology, Inc. | Method and apparatus to compensate for non-uniform film growth during chemical vapor deposition |
KR100234539B1 (ko) * | 1996-12-24 | 1999-12-15 | 윤종용 | 반도체장치 제조용 식각 장치 |
US6105435A (en) | 1997-10-24 | 2000-08-22 | Cypress Semiconductor Corp. | Circuit and apparatus for verifying a chamber seal, and method of depositing a material onto a substrate using the same |
US6079353A (en) * | 1998-03-28 | 2000-06-27 | Quester Technology, Inc. | Chamber for reducing contamination during chemical vapor deposition |
US6265033B1 (en) | 1998-09-11 | 2001-07-24 | Donald Bennett Hilliard | Method for optically coupled vapor deposition |
TW522292B (en) * | 2001-02-06 | 2003-03-01 | Asml Us Inc | Inertial temperature control system and method |
KR100503383B1 (ko) * | 2003-02-04 | 2005-07-26 | 동부아남반도체 주식회사 | 로드 락 챔버의 센서 케이블 연결장치 |
EP1717355B1 (de) * | 2004-02-02 | 2013-11-20 | Shin-Etsu Handotai Co., Ltd. | Herstellungsvorrichtung und herstellungsverfahren für siliciumeinkristall und siliciumwafer |
KR101129929B1 (ko) * | 2004-05-17 | 2012-03-23 | 신에츠 폴리머 가부시키가이샤 | 기판 수납 용기 |
JP2006114848A (ja) * | 2004-10-18 | 2006-04-27 | Apex Corp | 紫外線照射処理装置、紫外線照射処理方法及び半導体製造装置 |
US7531426B2 (en) * | 2005-08-19 | 2009-05-12 | Honeywell International Inc. | Approach to high temperature wafer processing |
EP2509246B1 (de) | 2010-06-18 | 2014-01-08 | Cisco Technology, Inc. | Verfahren und Schaltung zur BER-Einschätzung |
WO2014033055A1 (en) | 2012-08-27 | 2014-03-06 | Aktiebolaget Electrolux | Robot positioning system |
KR102118769B1 (ko) | 2013-04-15 | 2020-06-03 | 에이비 엘렉트로룩스 | 로봇 진공 청소기 |
JP6198234B2 (ja) | 2013-04-15 | 2017-09-20 | アクティエボラゲット エレクトロラックス | 突出サイドブラシを備えたロボット真空掃除機 |
EP3082541B1 (de) | 2013-12-19 | 2018-04-04 | Aktiebolaget Electrolux | Angepasste geschwindigkeitskontrolle der rotierenden seitenbürste |
CN105849660B (zh) | 2013-12-19 | 2020-05-08 | 伊莱克斯公司 | 机器人清扫装置 |
US10617271B2 (en) | 2013-12-19 | 2020-04-14 | Aktiebolaget Electrolux | Robotic cleaning device and method for landmark recognition |
JP6455737B2 (ja) | 2013-12-19 | 2019-01-23 | アクチエボラゲット エレクトロルックス | 方法、ロボット掃除機、コンピュータプログラムおよびコンピュータプログラム製品 |
JP6494118B2 (ja) | 2013-12-19 | 2019-04-03 | アクチエボラゲット エレクトロルックス | 障害物の乗り上げの検出に伴うロボット掃除機の制御方法、並びに、当該方法を有するロボット掃除機、プログラム、及びコンピュータ製品 |
KR102116596B1 (ko) | 2013-12-19 | 2020-05-28 | 에이비 엘렉트로룩스 | 나선형 패턴으로 이동하는 사이드 브러시를 구비한 로봇 진공 청소기 |
CN105793790B (zh) | 2013-12-19 | 2022-03-04 | 伊莱克斯公司 | 优先化清洁区域 |
WO2015090439A1 (en) | 2013-12-20 | 2015-06-25 | Aktiebolaget Electrolux | Dust container |
JP6513709B2 (ja) | 2014-07-10 | 2019-05-15 | アクチエボラゲット エレクトロルックス | ロボット型清掃装置における計測誤差を検出する方法、ロボット型清掃装置、コンピュータプログラムおよびコンピュータプログラムプロダクト |
US10729297B2 (en) | 2014-09-08 | 2020-08-04 | Aktiebolaget Electrolux | Robotic vacuum cleaner |
KR102271785B1 (ko) | 2014-09-08 | 2021-06-30 | 에이비 엘렉트로룩스 | 로봇 진공 청소기 |
WO2016091291A1 (en) | 2014-12-10 | 2016-06-16 | Aktiebolaget Electrolux | Using laser sensor for floor type detection |
US10874271B2 (en) | 2014-12-12 | 2020-12-29 | Aktiebolaget Electrolux | Side brush and robotic cleaner |
JP6532530B2 (ja) | 2014-12-16 | 2019-06-19 | アクチエボラゲット エレクトロルックス | ロボット掃除機の掃除方法 |
KR102339531B1 (ko) | 2014-12-16 | 2021-12-16 | 에이비 엘렉트로룩스 | 로봇 청소 장치를 위한 경험-기반의 로드맵 |
EP3282912B1 (de) | 2015-04-17 | 2020-06-10 | Aktiebolaget Electrolux | Reinigungsroboter und ein verfahren zur steuerung des reinigungsroboters |
WO2017036532A1 (en) | 2015-09-03 | 2017-03-09 | Aktiebolaget Electrolux | System of robotic cleaning devices |
WO2017157421A1 (en) | 2016-03-15 | 2017-09-21 | Aktiebolaget Electrolux | Robotic cleaning device and a method at the robotic cleaning device of performing cliff detection |
US11122953B2 (en) | 2016-05-11 | 2021-09-21 | Aktiebolaget Electrolux | Robotic cleaning device |
CN110621208A (zh) | 2017-06-02 | 2019-12-27 | 伊莱克斯公司 | 检测机器人清洁设备前方的表面的高度差的方法 |
WO2019063066A1 (en) | 2017-09-26 | 2019-04-04 | Aktiebolaget Electrolux | CONTROL FOR MOVING A ROBOTIC CLEANING DEVICE |
US11794314B2 (en) | 2021-08-30 | 2023-10-24 | Kla Corporation | Quick swap chuck with vacuum holding interchangeable top plate |
CN114835385B (zh) * | 2022-05-25 | 2023-08-18 | 安徽光智科技有限公司 | 石英封泡、石英容器、石英管封口系统及石英管封口方法 |
FR3140672A1 (fr) * | 2022-10-07 | 2024-04-12 | Annealsys | Four à recuit thermique rapide à étanchéité améliorée |
Family Cites Families (37)
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US3439238A (en) * | 1963-12-16 | 1969-04-15 | Texas Instruments Inc | Semiconductor devices and process for embedding same in plastic |
US3765763A (en) * | 1969-07-29 | 1973-10-16 | Texas Instruments Inc | Automatic slice processing |
US4306292A (en) * | 1971-04-16 | 1981-12-15 | Texas Instruments Incorporated | Segmented asynchronous operation of an automated assembly line |
US3916822A (en) * | 1974-04-26 | 1975-11-04 | Bell Telephone Labor Inc | Chemical vapor deposition reactor |
US4250428A (en) * | 1979-05-09 | 1981-02-10 | The United States Of America As Represented By The Secretary Of The Army | Bonded cathode and electrode structure with layered insulation, and method of manufacture |
US4293249A (en) * | 1980-03-03 | 1981-10-06 | Texas Instruments Incorporated | Material handling system and method for manufacturing line |
US4465898A (en) * | 1981-07-27 | 1984-08-14 | Texas Instruments Incorporated | Carrier for integrated circuit |
US4393095A (en) * | 1982-02-01 | 1983-07-12 | Ppg Industries, Inc. | Chemical vapor deposition of vanadium oxide coatings |
US4447469A (en) * | 1982-06-10 | 1984-05-08 | Hughes Aircraft Company | Process for forming sulfide layers by photochemical vapor deposition |
US4439244A (en) * | 1982-08-03 | 1984-03-27 | Texas Instruments Incorporated | Apparatus and method of material removal having a fluid filled slot |
US4439243A (en) * | 1982-08-03 | 1984-03-27 | Texas Instruments Incorporated | Apparatus and method of material removal with fluid flow within a slot |
US4615905A (en) * | 1982-09-24 | 1986-10-07 | Sovonics Solar Systems, Inc. | Method of depositing semiconductor films by free radical generation |
JPS5959876A (ja) * | 1982-09-30 | 1984-04-05 | Ushio Inc | 光照射炉の運転方法 |
JPS59215732A (ja) * | 1983-05-24 | 1984-12-05 | Semiconductor Energy Lab Co Ltd | 窒化珪素被膜作製方法 |
JPH0622212B2 (ja) * | 1983-05-31 | 1994-03-23 | 株式会社東芝 | ドライエッチング方法 |
US4547247A (en) * | 1984-03-09 | 1985-10-15 | Tegal Corporation | Plasma reactor chuck assembly |
US4629635A (en) * | 1984-03-16 | 1986-12-16 | Genus, Inc. | Process for depositing a low resistivity tungsten silicon composite film on a substrate |
JPS60197233A (ja) * | 1984-03-19 | 1985-10-05 | Toshiba Corp | 光照射処理装置 |
US4579609A (en) * | 1984-06-08 | 1986-04-01 | Massachusetts Institute Of Technology | Growth of epitaxial films by chemical vapor deposition utilizing a surface cleaning step immediately before deposition |
JPS6156280A (ja) * | 1984-08-25 | 1986-03-20 | Yasuo Tarui | 被膜形成方法 |
US4609103A (en) * | 1984-08-27 | 1986-09-02 | Texas Instruments Incorporated | Semiconductor slice cassette carrier |
US4584207A (en) * | 1984-09-24 | 1986-04-22 | General Electric Company | Method for nucleating and growing tungsten films |
JPS61113778A (ja) * | 1984-11-07 | 1986-05-31 | Hitachi Ltd | 表面処理装置 |
JPS61114532A (ja) * | 1984-11-09 | 1986-06-02 | Hitachi Ltd | プラズマ処理装置 |
JPH0824114B2 (ja) * | 1984-11-09 | 1996-03-06 | 株式会社日立製作所 | プラズマエッチング方法 |
JPH0715898B2 (ja) * | 1984-12-24 | 1995-02-22 | 株式会社日立製作所 | マイクロ波プラズマ処理装置 |
JPS61210634A (ja) * | 1985-03-15 | 1986-09-18 | Toshiba Corp | 真空内処理装置 |
JPS61231716A (ja) * | 1985-04-08 | 1986-10-16 | Hitachi Ltd | 成膜装置 |
US4664938A (en) * | 1985-05-06 | 1987-05-12 | Phillips Petroleum Company | Method for deposition of silicon |
JPH0691048B2 (ja) * | 1985-05-17 | 1994-11-14 | 日本真空技術株式会社 | 基板乾処理の方法および装置 |
JPS6227573A (ja) * | 1985-07-30 | 1987-02-05 | Yasuo Tarui | 光化学反応装置 |
US4632057A (en) * | 1985-08-05 | 1986-12-30 | Spectrum Cvd, Inc. | CVD plasma reactor |
US4673456A (en) * | 1985-09-17 | 1987-06-16 | Machine Technology, Inc. | Microwave apparatus for generating plasma afterglows |
US4687542A (en) * | 1985-10-24 | 1987-08-18 | Texas Instruments Incorporated | Vacuum processing system |
US4685999A (en) * | 1985-10-24 | 1987-08-11 | Texas Instruments Incorporated | Apparatus for plasma assisted etching |
JPS62136573A (ja) * | 1985-12-11 | 1987-06-19 | Hitachi Ltd | プラズマ処理装置 |
US4684542A (en) * | 1986-08-11 | 1987-08-04 | International Business Machines Corporation | Low pressure chemical vapor deposition of tungsten silicide |
-
1987
- 1987-07-17 US US07/075,016 patent/US4842686A/en not_active Expired - Lifetime
-
1988
- 1988-06-23 DE DE3854540T patent/DE3854540T2/de not_active Expired - Lifetime
- 1988-06-23 EP EP88109988A patent/EP0300217B1/de not_active Expired - Lifetime
- 1988-07-14 KR KR1019880008766A patent/KR970000202B1/ko not_active IP Right Cessation
- 1988-07-15 JP JP63175329A patent/JPH02146744A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0300217A2 (de) | 1989-01-25 |
DE3854540T2 (de) | 1996-03-07 |
EP0300217B1 (de) | 1995-10-04 |
US4842686A (en) | 1989-06-27 |
KR970000202B1 (ko) | 1997-01-06 |
KR890002976A (ko) | 1989-04-12 |
JPH02146744A (ja) | 1990-06-05 |
EP0300217A3 (en) | 1989-04-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |