DE3873847D1 - Behandlungsapparat und -verfahren. - Google Patents

Behandlungsapparat und -verfahren.

Info

Publication number
DE3873847D1
DE3873847D1 DE8888110010T DE3873847T DE3873847D1 DE 3873847 D1 DE3873847 D1 DE 3873847D1 DE 8888110010 T DE8888110010 T DE 8888110010T DE 3873847 T DE3873847 T DE 3873847T DE 3873847 D1 DE3873847 D1 DE 3873847D1
Authority
DE
Germany
Prior art keywords
treatment apparatus
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888110010T
Other languages
English (en)
Other versions
DE3873847T2 (de
Inventor
Cecil J Davis
Robert T Matthews
Rhett B Jucha
Lee M Loewenstein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE3873847D1 publication Critical patent/DE3873847D1/de
Publication of DE3873847T2 publication Critical patent/DE3873847T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/905Cleaning of reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
DE8888110010T 1987-07-16 1988-06-23 Behandlungsapparat und -verfahren. Expired - Lifetime DE3873847T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/074,422 US4820377A (en) 1987-07-16 1987-07-16 Method for cleanup processing chamber and vacuum process module

Publications (2)

Publication Number Publication Date
DE3873847D1 true DE3873847D1 (de) 1992-09-24
DE3873847T2 DE3873847T2 (de) 1993-03-18

Family

ID=22119481

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888110010T Expired - Lifetime DE3873847T2 (de) 1987-07-16 1988-06-23 Behandlungsapparat und -verfahren.

Country Status (5)

Country Link
US (1) US4820377A (de)
EP (1) EP0299247B1 (de)
JP (1) JP2840071B2 (de)
KR (1) KR970000205B1 (de)
DE (1) DE3873847T2 (de)

Families Citing this family (216)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5225036A (en) * 1988-03-28 1993-07-06 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US5156820A (en) * 1989-05-15 1992-10-20 Rapro Technology, Inc. Reaction chamber with controlled radiant energy heating and distributed reactant flow
JPH03130368A (ja) * 1989-09-22 1991-06-04 Applied Materials Inc 半導体ウェーハプロセス装置の洗浄方法
JP2848498B2 (ja) * 1989-11-25 1999-01-20 日本特殊陶業株式会社 ダイヤモンドの合成方法、ダイヤモンド被覆切削工具の製造方法、及びダイヤモンド被覆切削工具の製造方法
US6016383A (en) * 1990-01-19 2000-01-18 Applied Materials, Inc. Rapid thermal heating apparatus and method including an infrared camera to measure substrate temperature
US5155336A (en) * 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
US5294320A (en) * 1990-02-09 1994-03-15 Applied Materials, Inc. Apparatus for cleaning a shield in a physical vapor deposition chamber
US5275976A (en) * 1990-12-27 1994-01-04 Texas Instruments Incorporated Process chamber purge module for semiconductor processing equipment
US5417826A (en) * 1992-06-15 1995-05-23 Micron Technology, Inc. Removal of carbon-based polymer residues with ozone, useful in the cleaning of plasma reactors
US5421957A (en) * 1993-07-30 1995-06-06 Applied Materials, Inc. Low temperature etching in cold-wall CVD systems
US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
US5928964A (en) * 1995-12-21 1999-07-27 Texas Instruments Incorporated System and method for anisotropic etching of silicon nitride
US6072160A (en) * 1996-06-03 2000-06-06 Applied Materials, Inc. Method and apparatus for enhancing the efficiency of radiant energy sources used in rapid thermal processing of substrates by energy reflection
US6015761A (en) * 1996-06-26 2000-01-18 Applied Materials, Inc. Microwave-activated etching of dielectric layers
US6714832B1 (en) * 1996-09-11 2004-03-30 Hitachi, Ltd. Operating method of vacuum processing system and vacuum processing system
US6749717B1 (en) 1997-02-04 2004-06-15 Micron Technology, Inc. Device for in-situ cleaning of an inductively-coupled plasma chambers
US5960158A (en) * 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US6168672B1 (en) * 1998-03-06 2001-01-02 Applied Materials Inc. Method and apparatus for automatically performing cleaning processes in a semiconductor wafer processing system
US6254717B1 (en) * 1998-04-23 2001-07-03 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US5930456A (en) * 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US6170492B1 (en) * 1998-06-15 2001-01-09 Applied Materials, Inc. Cleaning process end point determination using throttle valve position
US6021791A (en) 1998-06-29 2000-02-08 Speedfam-Ipec Corporation Method and apparatus for immersion cleaning of semiconductor devices
US6277235B1 (en) * 1998-08-11 2001-08-21 Novellus Systems, Inc. In situ plasma clean gas injection
US6467490B1 (en) * 1998-08-31 2002-10-22 Texas Instruments Incorporated Process for using a high nitrogen concentration plasma for fluorine removal from a reactor
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6310328B1 (en) 1998-12-10 2001-10-30 Mattson Technologies, Inc. Rapid thermal processing chamber for processing multiple wafers
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
JP3433392B2 (ja) * 1999-01-12 2003-08-04 セントラル硝子株式会社 クリーニングガス及び真空処理装置のクリーニング方法
US6596123B1 (en) * 2000-01-28 2003-07-22 Applied Materials, Inc. Method and apparatus for cleaning a semiconductor wafer processing system
US6564810B1 (en) 2000-03-28 2003-05-20 Asm America Cleaning of semiconductor processing chambers
US6569257B1 (en) * 2000-11-09 2003-05-27 Applied Materials Inc. Method for cleaning a process chamber
US6852242B2 (en) 2001-02-23 2005-02-08 Zhi-Wen Sun Cleaning of multicompositional etchant residues
US6810886B2 (en) * 2001-05-24 2004-11-02 Applied Materials, Inc. Chamber cleaning via rapid thermal process during a cleaning period
US20030221708A1 (en) * 2002-06-04 2003-12-04 Chun-Hao Ly Method of cleaning a semiconductor process chamber
US7588036B2 (en) * 2002-07-01 2009-09-15 Applied Materials, Inc. Chamber clean method using remote and in situ plasma cleaning systems
US7097716B2 (en) * 2002-10-17 2006-08-29 Applied Materials, Inc. Method for performing fluorocarbon chamber cleaning to eliminate fluorine memory effect
US6923189B2 (en) * 2003-01-16 2005-08-02 Applied Materials, Inc. Cleaning of CVD chambers using remote source with cxfyoz based chemistry
US7053000B2 (en) * 2003-02-06 2006-05-30 Lam Research Corporation System, method and apparatus for constant voltage control of RF generator for optimum operation
US7033845B2 (en) * 2003-02-06 2006-04-25 Lam Research Corporation Phase control of megasonic RF generator for optimum operation
US6995067B2 (en) * 2003-02-06 2006-02-07 Lam Research Corporation Megasonic cleaning efficiency using auto-tuning of an RF generator at constant maximum efficiency
US6998349B2 (en) 2003-02-06 2006-02-14 Lam Research Corporation System, method and apparatus for automatic control of an RF generator for maximum efficiency
US8536492B2 (en) * 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
US20050252529A1 (en) * 2004-05-12 2005-11-17 Ridgeway Robert G Low temperature CVD chamber cleaning using dilute NF3
WO2006019201A1 (en) * 2004-08-18 2006-02-23 Lg Electronics Inc. Apparatus for automatically drying and method for controlling the same
US20060175013A1 (en) * 2005-02-10 2006-08-10 Michael Cox Specimen surface treatment system
US20060175014A1 (en) * 2005-02-10 2006-08-10 Michael Cox Specimen surface treatment system
WO2007045110A2 (en) * 2005-10-17 2007-04-26 Oc Oerlikon Balzers Ag Cleaning means for large area pecvd devices using a remote plasma source
US7789965B2 (en) * 2006-09-19 2010-09-07 Asm Japan K.K. Method of cleaning UV irradiation chamber
US8327861B2 (en) * 2006-12-19 2012-12-11 Lam Research Corporation Megasonic precision cleaning of semiconductor process equipment components and parts
KR100838380B1 (ko) * 2007-03-26 2008-06-13 주식회사 하이닉스반도체 반도체 소자의 트렌치 형성 방법
US20080289650A1 (en) * 2007-05-24 2008-11-27 Asm America, Inc. Low-temperature cleaning of native oxide
US7781310B2 (en) 2007-08-07 2010-08-24 Semiconductor Components Industries, Llc Semiconductor die singulation method
US8012857B2 (en) * 2007-08-07 2011-09-06 Semiconductor Components Industries, Llc Semiconductor die singulation method
US8859396B2 (en) 2007-08-07 2014-10-14 Semiconductor Components Industries, Llc Semiconductor die singulation method
US7989319B2 (en) * 2007-08-07 2011-08-02 Semiconductor Components Industries, Llc Semiconductor die singulation method
DE102007054073A1 (de) * 2007-11-13 2009-05-14 Carl Zeiss Nts Gmbh System und Verfahren zum Bearbeiten eines Objekts
US8118946B2 (en) * 2007-11-30 2012-02-21 Wesley George Lau Cleaning process residues from substrate processing chamber components
US7871937B2 (en) 2008-05-16 2011-01-18 Asm America, Inc. Process and apparatus for treating wafers
US9299664B2 (en) * 2010-01-18 2016-03-29 Semiconductor Components Industries, Llc Method of forming an EM protected semiconductor die
US8384231B2 (en) * 2010-01-18 2013-02-26 Semiconductor Components Industries, Llc Method of forming a semiconductor die
US20110175209A1 (en) * 2010-01-18 2011-07-21 Seddon Michael J Method of forming an em protected semiconductor die
US9165833B2 (en) * 2010-01-18 2015-10-20 Semiconductor Components Industries, Llc Method of forming a semiconductor die
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US20140099794A1 (en) * 2012-09-21 2014-04-10 Applied Materials, Inc. Radical chemistry modulation and control using multiple flow pathways
US9136173B2 (en) 2012-11-07 2015-09-15 Semiconductor Components Industries, Llc Singulation method for semiconductor die having a layer of material along one major surface
US9484260B2 (en) 2012-11-07 2016-11-01 Semiconductor Components Industries, Llc Heated carrier substrate semiconductor die singulation method
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
KR102167594B1 (ko) * 2013-12-04 2020-10-19 삼성전자주식회사 기판 처리 방법 및 이를 수행하기 위한 장치
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299557B2 (en) 2014-03-19 2016-03-29 Asm Ip Holding B.V. Plasma pre-clean module and process
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9418894B2 (en) 2014-03-21 2016-08-16 Semiconductor Components Industries, Llc Electronic die singulation method
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
JP2015211156A (ja) * 2014-04-28 2015-11-24 東京エレクトロン株式会社 ドライクリーニング方法及びプラズマ処理装置
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9385041B2 (en) 2014-08-26 2016-07-05 Semiconductor Components Industries, Llc Method for insulating singulated electronic die
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9355862B2 (en) 2014-09-24 2016-05-31 Applied Materials, Inc. Fluorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9474163B2 (en) 2014-12-30 2016-10-18 Asm Ip Holding B.V. Germanium oxide pre-clean module and process
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US10373850B2 (en) 2015-03-11 2019-08-06 Asm Ip Holding B.V. Pre-clean chamber and process with substrate tray for changing substrate temperature
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10366923B2 (en) 2016-06-02 2019-07-30 Semiconductor Components Industries, Llc Method of separating electronic devices having a back layer and apparatus
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US11694911B2 (en) * 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
JP6481138B2 (ja) * 2017-04-28 2019-03-13 アドバンストマテリアルテクノロジーズ株式会社 配向膜基板の製造方法、スパッタリング装置及びマルチチャンバー装置
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10373869B2 (en) 2017-05-24 2019-08-06 Semiconductor Components Industries, Llc Method of separating a back layer on a substrate using exposure to reduced temperature and related apparatus
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10818551B2 (en) 2019-01-09 2020-10-27 Semiconductor Components Industries, Llc Plasma die singulation systems and related methods
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3439238A (en) * 1963-12-16 1969-04-15 Texas Instruments Inc Semiconductor devices and process for embedding same in plastic
US3765763A (en) * 1969-07-29 1973-10-16 Texas Instruments Inc Automatic slice processing
US4306292A (en) * 1971-04-16 1981-12-15 Texas Instruments Incorporated Segmented asynchronous operation of an automated assembly line
US4138306A (en) * 1976-08-31 1979-02-06 Tokyo Shibaura Electric Co., Ltd. Apparatus for the treatment of semiconductors
US4250428A (en) * 1979-05-09 1981-02-10 The United States Of America As Represented By The Secretary Of The Army Bonded cathode and electrode structure with layered insulation, and method of manufacture
US4282267A (en) * 1979-09-20 1981-08-04 Western Electric Co., Inc. Methods and apparatus for generating plasmas
US4293249A (en) * 1980-03-03 1981-10-06 Texas Instruments Incorporated Material handling system and method for manufacturing line
JPS57167631A (en) * 1981-03-13 1982-10-15 Fujitsu Ltd Plasma vapor-phase growing method
US4465898A (en) * 1981-07-27 1984-08-14 Texas Instruments Incorporated Carrier for integrated circuit
US4393095A (en) * 1982-02-01 1983-07-12 Ppg Industries, Inc. Chemical vapor deposition of vanadium oxide coatings
US4447469A (en) * 1982-06-10 1984-05-08 Hughes Aircraft Company Process for forming sulfide layers by photochemical vapor deposition
US4439244A (en) * 1982-08-03 1984-03-27 Texas Instruments Incorporated Apparatus and method of material removal having a fluid filled slot
US4439243A (en) * 1982-08-03 1984-03-27 Texas Instruments Incorporated Apparatus and method of material removal with fluid flow within a slot
US4440108A (en) * 1982-09-24 1984-04-03 Spire Corporation Ion beam coating apparatus
US4615905A (en) * 1982-09-24 1986-10-07 Sovonics Solar Systems, Inc. Method of depositing semiconductor films by free radical generation
JPS5959876A (ja) * 1982-09-30 1984-04-05 Ushio Inc 光照射炉の運転方法
US4576698A (en) * 1983-06-30 1986-03-18 International Business Machines Corporation Plasma etch cleaning in low pressure chemical vapor deposition systems
US4629635A (en) * 1984-03-16 1986-12-16 Genus, Inc. Process for depositing a low resistivity tungsten silicon composite film on a substrate
US4579609A (en) * 1984-06-08 1986-04-01 Massachusetts Institute Of Technology Growth of epitaxial films by chemical vapor deposition utilizing a surface cleaning step immediately before deposition
KR920004171B1 (ko) * 1984-07-11 1992-05-30 가부시기가이샤 히다찌세이사꾸쇼 드라이에칭장치
US4609103A (en) * 1984-08-27 1986-09-02 Texas Instruments Incorporated Semiconductor slice cassette carrier
US4584207A (en) * 1984-09-24 1986-04-22 General Electric Company Method for nucleating and growing tungsten films
US4664938A (en) * 1985-05-06 1987-05-12 Phillips Petroleum Company Method for deposition of silicon
US4687544A (en) * 1985-05-17 1987-08-18 Emergent Technologies Corporation Method and apparatus for dry processing of substrates
US4689112A (en) * 1985-05-17 1987-08-25 Emergent Technologies Corporation Method and apparatus for dry processing of substrates
US4632057A (en) * 1985-08-05 1986-12-30 Spectrum Cvd, Inc. CVD plasma reactor
US4673456A (en) * 1985-09-17 1987-06-16 Machine Technology, Inc. Microwave apparatus for generating plasma afterglows
US4675089A (en) * 1985-11-25 1987-06-23 At&T Technologies, Inc. Low temperature deposition method for high quality aluminum oxide films
US4684542A (en) * 1986-08-11 1987-08-04 International Business Machines Corporation Low pressure chemical vapor deposition of tungsten silicide

Also Published As

Publication number Publication date
KR890002983A (ko) 1989-04-12
US4820377A (en) 1989-04-11
JPH028361A (ja) 1990-01-11
DE3873847T2 (de) 1993-03-18
JP2840071B2 (ja) 1998-12-24
EP0299247A1 (de) 1989-01-18
EP0299247B1 (de) 1992-08-19
KR970000205B1 (ko) 1997-01-06

Similar Documents

Publication Publication Date Title
DE3873847D1 (de) Behandlungsapparat und -verfahren.
DE3854540D1 (de) Behandlungsapparat und Verfahren.
DE3881473D1 (de) Verfahren und sterilisationsvorrichtung.
ATE82729T1 (de) Verpackungsverfahren und -apparat.
DE68915184D1 (de) Bilderzeugungsverfahren und -gerät.
KR890700877A (ko) 바이코우드의 코오드화 및 해독의 방법 및 장치
DE3873112D1 (de) Abwasserbehandlungsverfahren.
DE3861562D1 (de) Aufzeichnungsgeraet und -verfahren.
DE3887761D1 (de) Zyklusüberwachungsverfahren und -apparat.
DE68906508D1 (de) Abgasbehandlungsapparat.
DE3781313D1 (de) Verfahren und vorrichtung.
DE68917755D1 (de) Bilderzeugungsverfahren und -gerät.
KR890700405A (ko) 피복장치와 방법
IT1224806B (it) Metodo e apparecchio di filatura
DE69012647D1 (de) Halbleiterbehandlungsvorrichtung und Verfahren.
DE3778681D1 (de) Destillationsverfahren und vorrichtung.
NO159014C (no) Fremgangsmaate og anordning for behandling av vann.
DE3854216D1 (de) Bildverarbeitungsgerät und -verfahren.
DE3861876D1 (de) Vollformverfahren und -vorrichtung.
DE3880246D1 (de) Reinigungsverfahren und geraet dafuer.
DE3874638D1 (de) Behandlungsapparat und -verfahren.
DE68902310D1 (de) Apparat zur honigbehandlung.
DE3751272D1 (de) Inhalationsvorrichtung und Methode.
DE3873846D1 (de) Behandlungsapparat und verfahren.
DE3873848D1 (de) Behandlungsapparat und -verfahren.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition