DE3854113T2 - Verfahren zur selektiven reaktiven Ionenätzung von Substraten. - Google Patents

Verfahren zur selektiven reaktiven Ionenätzung von Substraten.

Info

Publication number
DE3854113T2
DE3854113T2 DE3854113T DE3854113T DE3854113T2 DE 3854113 T2 DE3854113 T2 DE 3854113T2 DE 3854113 T DE3854113 T DE 3854113T DE 3854113 T DE3854113 T DE 3854113T DE 3854113 T2 DE3854113 T2 DE 3854113T2
Authority
DE
Germany
Prior art keywords
substrates
reactive ion
ion etching
selective reactive
selective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3854113T
Other languages
English (en)
Other versions
DE3854113D1 (de
Inventor
Brian Henry Desilets
Richard Dean Kaplan
Harbans Singh Sachdev
Krishna Gandhi Sachdev
Suzan Ann Sanchez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3854113D1 publication Critical patent/DE3854113D1/de
Publication of DE3854113T2 publication Critical patent/DE3854113T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/95—Multilayer mask including nonradiation sensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE3854113T 1987-10-30 1988-09-27 Verfahren zur selektiven reaktiven Ionenätzung von Substraten. Expired - Fee Related DE3854113T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/115,140 US4826564A (en) 1987-10-30 1987-10-30 Method of selective reactive ion etching of substrates

Publications (2)

Publication Number Publication Date
DE3854113D1 DE3854113D1 (de) 1995-08-10
DE3854113T2 true DE3854113T2 (de) 1996-02-29

Family

ID=22359519

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3854113T Expired - Fee Related DE3854113T2 (de) 1987-10-30 1988-09-27 Verfahren zur selektiven reaktiven Ionenätzung von Substraten.

Country Status (4)

Country Link
US (1) US4826564A (de)
EP (1) EP0314599B1 (de)
JP (1) JPH06103673B2 (de)
DE (1) DE3854113T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5169494A (en) * 1989-03-27 1992-12-08 Matsushita Electric Industrial Co., Ltd. Fine pattern forming method
US5001085A (en) * 1990-07-17 1991-03-19 Micron Technology, Inc. Process for creating a metal etch mask which may be utilized for halogen-plasma excavation of deep trenches
US5316895A (en) * 1990-10-31 1994-05-31 Texas Instruments Incorporated Photolithographic method using non-photoactive resins
US5277749A (en) * 1991-10-17 1994-01-11 International Business Machines Corporation Methods and apparatus for relieving stress and resisting stencil delamination when performing lift-off processes that utilize high stress metals and/or multiple evaporation steps
JPH05343308A (ja) * 1992-06-09 1993-12-24 Mitsubishi Electric Corp 半導体装置の製造方法
US5705321A (en) * 1993-09-30 1998-01-06 The University Of New Mexico Method for manufacture of quantum sized periodic structures in Si materials
US5665251A (en) * 1994-11-23 1997-09-09 International Business Machines Corporation RIE image transfer process for plating
US5994229A (en) * 1998-01-12 1999-11-30 Taiwan Semiconductor Manufacturing Company Ltd. Achievement of top rounding in shallow trench etch
US6252227B1 (en) * 1998-10-19 2001-06-26 Taiwan Semiconductor Manufacturing Company Method for sectioning a semiconductor wafer with FIB for viewing with SEM
US6749763B1 (en) * 1999-08-02 2004-06-15 Matsushita Electric Industrial Co., Ltd. Plasma processing method
US20010045527A1 (en) * 2000-04-05 2001-11-29 Wissman Barry Dean Electron-beam cured polymer mask for DRIE micro-machining
US6409312B1 (en) 2001-03-27 2002-06-25 Lexmark International, Inc. Ink jet printer nozzle plate and process therefor
US6806021B2 (en) * 2001-04-02 2004-10-19 Kabushiki Kaisha Toshiba Method for forming a pattern and method of manufacturing semiconductor device
JP3878583B2 (ja) * 2003-08-28 2007-02-07 株式会社東芝 パターン形成方法、ならびに半導体装置およびその製造方法
US7316844B2 (en) * 2004-01-16 2008-01-08 Brewer Science Inc. Spin-on protective coatings for wet-etch processing of microelectronic substrates
US20050155950A1 (en) * 2004-01-20 2005-07-21 Macronix International Co., Ltd. Method of forming a micro pattern on a substrate
JP4012156B2 (ja) * 2004-02-02 2007-11-21 独立行政法人科学技術振興機構 圧電素子の製造方法
JP4793583B2 (ja) * 2004-10-14 2011-10-12 日産化学工業株式会社 金属酸化物を含むリソグラフィー用下層膜形成組成物
US7695890B2 (en) * 2005-09-09 2010-04-13 Brewer Science Inc. Negative photoresist for silicon KOH etch without silicon nitride
US7709178B2 (en) * 2007-04-17 2010-05-04 Brewer Science Inc. Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride
US8192642B2 (en) * 2007-09-13 2012-06-05 Brewer Science Inc. Spin-on protective coatings for wet-etch processing of microelectronic substrates
FR2926162B1 (fr) * 2008-01-03 2017-09-01 Centre Nat De La Rech Scient - Cnrs Procede de modification localisee de l'energie de surface d'un substrat
KR20180080416A (ko) * 2017-01-03 2018-07-12 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4493855A (en) * 1982-12-23 1985-01-15 International Business Machines Corporation Use of plasma polymerized organosilicon films in fabrication of lift-off masks
US4539049A (en) * 1983-02-09 1985-09-03 Jos. Cavedon Co., Inc. Aluminum zirconium metallo-organic complex useful as coupling and hydrophobic agents
JPS59202636A (ja) * 1983-05-04 1984-11-16 Hitachi Ltd 微細パタ−ン形成方法
EP0215052A1 (de) * 1985-02-13 1987-03-25 Huck Manufacturing Company Befestigungssystem und befestigungsvorrichtung für schiffscontainer und dergleichen

Also Published As

Publication number Publication date
EP0314599A3 (de) 1991-03-06
JPH06103673B2 (ja) 1994-12-14
EP0314599B1 (de) 1995-07-05
JPH01137635A (ja) 1989-05-30
US4826564A (en) 1989-05-02
EP0314599A2 (de) 1989-05-03
DE3854113D1 (de) 1995-08-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee