DE3852881T2 - Dotierungsfolie und Methoden zur Diffusion von Verunreinigungen und Herstellung eines Halbleiterplättchens. - Google Patents

Dotierungsfolie und Methoden zur Diffusion von Verunreinigungen und Herstellung eines Halbleiterplättchens.

Info

Publication number
DE3852881T2
DE3852881T2 DE3852881T DE3852881T DE3852881T2 DE 3852881 T2 DE3852881 T2 DE 3852881T2 DE 3852881 T DE3852881 T DE 3852881T DE 3852881 T DE3852881 T DE 3852881T DE 3852881 T2 DE3852881 T2 DE 3852881T2
Authority
DE
Germany
Prior art keywords
impurities
diffusion
production
methods
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3852881T
Other languages
English (en)
Other versions
DE3852881D1 (de
Inventor
Masaburo C O Patent Di Iwabuch
Hideyoshi C O Patent Divis Ito
Kenju C O Patent Divi Unetsubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3852881D1 publication Critical patent/DE3852881D1/de
Publication of DE3852881T2 publication Critical patent/DE3852881T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Photovoltaic Devices (AREA)
DE3852881T 1988-07-14 1988-10-31 Dotierungsfolie und Methoden zur Diffusion von Verunreinigungen und Herstellung eines Halbleiterplättchens. Expired - Fee Related DE3852881T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63173718A JPH0715893B2 (ja) 1988-07-14 1988-07-14 ドーパントフイルムおよび半導体基板の不純物拡散方法

Publications (2)

Publication Number Publication Date
DE3852881D1 DE3852881D1 (de) 1995-03-09
DE3852881T2 true DE3852881T2 (de) 1995-07-06

Family

ID=15965856

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3852881T Expired - Fee Related DE3852881T2 (de) 1988-07-14 1988-10-31 Dotierungsfolie und Methoden zur Diffusion von Verunreinigungen und Herstellung eines Halbleiterplättchens.

Country Status (4)

Country Link
US (1) US5094976A (de)
EP (1) EP0350531B1 (de)
JP (1) JPH0715893B2 (de)
DE (1) DE3852881T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0709878B1 (de) * 1994-10-24 1998-04-01 Naoetsu Electronics Company Verfahren zur Herstellung von Einzelsubstraten aus einem Silizium-Halbleiterwafer
US5670415A (en) * 1994-05-24 1997-09-23 Depositech, Inc. Method and apparatus for vacuum deposition of highly ionized media in an electromagnetic controlled environment
DE19538612A1 (de) * 1995-10-17 1997-04-24 Bosch Gmbh Robert Verfahren zur Herstellung einer Siliziumscheibe
US6132798A (en) * 1998-08-13 2000-10-17 Micron Technology, Inc. Method for applying atomized adhesive to a leadframe for chip bonding
US6030857A (en) 1996-03-11 2000-02-29 Micron Technology, Inc. Method for application of spray adhesive to a leadframe for chip bonding
US5810926A (en) * 1996-03-11 1998-09-22 Micron Technology, Inc. Method and apparatus for applying atomized adhesive to a leadframe for chip bonding
WO1999009588A1 (en) * 1997-08-21 1999-02-25 Memc Electronic Materials, Inc. Method of processing semiconductor wafers
CN100423814C (zh) 2004-02-19 2008-10-08 宇部兴产株式会社 从空气中分离/回收富氧空气的方法、其装置和气体分离膜组件
JP6100471B2 (ja) * 2012-03-29 2017-03-22 東京応化工業株式会社 不純物拡散成分の拡散方法、及び太陽電池の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3183130A (en) * 1962-01-22 1965-05-11 Motorola Inc Diffusion process and apparatus
US3630793A (en) * 1969-02-24 1971-12-28 Ralph W Christensen Method of making junction-type semiconductor devices
US3971870A (en) * 1971-07-27 1976-07-27 Semi-Elements, Inc. Semiconductor device material
JPS5932054B2 (ja) * 1977-12-17 1984-08-06 東京応化工業株式会社 ド−パントフィルムとその使用方法
JPS5658228A (en) * 1979-10-16 1981-05-21 Mitsubishi Electric Corp Installation of filmlike source of diffusion
JPS5790936A (en) * 1980-11-27 1982-06-05 Mitsubishi Electric Corp Impurity diffusing method
DE3207870A1 (de) * 1982-03-05 1983-09-15 Robert Bosch Gmbh, 7000 Stuttgart Dotierungsfolie zur dotierung von halbleiterkoerpern und verfahren zu deren herstellung
JPS58176926A (ja) * 1982-04-12 1983-10-17 Hitachi Ltd 半導体素子の製造方法
JPS58215022A (ja) * 1982-06-09 1983-12-14 Hitachi Ltd 半導体への不純物拡散法
JPS59196380A (ja) * 1984-01-30 1984-11-07 Hitachi Ltd 熱収縮粘着テ−プ
DE3581514D1 (de) * 1984-05-29 1991-02-28 Mitsui Toatsu Chemicals Film zur behandlung von halbleiterwaffeln.
US4661177A (en) * 1985-10-08 1987-04-28 Varian Associates, Inc. Method for doping semiconductor wafers by rapid thermal processing of solid planar diffusion sources
DE3639266A1 (de) * 1985-12-27 1987-07-02 Fsk K K Haftfolie
EP0252739B1 (de) * 1986-07-09 1993-10-06 LINTEC Corporation Klebestreifen zum Kleben von Plättchen

Also Published As

Publication number Publication date
EP0350531A3 (en) 1990-04-04
JPH0225019A (ja) 1990-01-26
EP0350531B1 (de) 1995-01-25
US5094976A (en) 1992-03-10
JPH0715893B2 (ja) 1995-02-22
DE3852881D1 (de) 1995-03-09
EP0350531A2 (de) 1990-01-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee