JPS5658228A - Installation of filmlike source of diffusion - Google Patents

Installation of filmlike source of diffusion

Info

Publication number
JPS5658228A
JPS5658228A JP13407079A JP13407079A JPS5658228A JP S5658228 A JPS5658228 A JP S5658228A JP 13407079 A JP13407079 A JP 13407079A JP 13407079 A JP13407079 A JP 13407079A JP S5658228 A JPS5658228 A JP S5658228A
Authority
JP
Japan
Prior art keywords
wafer
diffusion
diffusion source
filmlike
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13407079A
Other languages
Japanese (ja)
Inventor
Shizutaka Okubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13407079A priority Critical patent/JPS5658228A/en
Publication of JPS5658228A publication Critical patent/JPS5658228A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase

Abstract

PURPOSE:To prevent a positional deviation and a defective adhesion due to evaporative contraction of diffusion source by a method wherein laminating materials such as a P type filmlike diffusion source with a larger diameter than that of a wafer, a wafer and an N type filmlike diffusion source with the same diameter as the diffusion source are superposed, and then a weight is attached. CONSTITUTION:A discoid stand 2a is positioned on a diffusion boat 1. On this boat, an N type filmlike diffusion source 4 with the same diameter as a wafer 4, a wafer 4, a P type filmlike diffusion source 9 with a larger diameter than that of the wafer, the wafer 4 are superposed in the above order, and a discoid quartz weight 2b having a larger diameter than the wafer and the diffusion source is placed on the second layer of the diffusion source 9. Hereby, as the diffusion source 9 has a larger diameter than that of the wafer 4, no gap is made when it is contracted at the time of evaporation. In addition, as a uniform weighting is applied by the weight of the wafer itself and the weight 2b, the positional deviation between the wafer and the diffusion sources 3 and 9, and a diffective adhesion are rotally eliminated, a normal diffusion is performed, evaporated impurities do not infiltrate into the wafer surface because there is no gap and a semiconductor device of stabilized quality can be obtained.
JP13407079A 1979-10-16 1979-10-16 Installation of filmlike source of diffusion Pending JPS5658228A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13407079A JPS5658228A (en) 1979-10-16 1979-10-16 Installation of filmlike source of diffusion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13407079A JPS5658228A (en) 1979-10-16 1979-10-16 Installation of filmlike source of diffusion

Publications (1)

Publication Number Publication Date
JPS5658228A true JPS5658228A (en) 1981-05-21

Family

ID=15119668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13407079A Pending JPS5658228A (en) 1979-10-16 1979-10-16 Installation of filmlike source of diffusion

Country Status (1)

Country Link
JP (1) JPS5658228A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5094976A (en) * 1988-07-14 1992-03-10 Kabushiki Kaisha Toshiba Dopant film and methods of diffusing impurity into and manufacturing a semiconductor wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5094976A (en) * 1988-07-14 1992-03-10 Kabushiki Kaisha Toshiba Dopant film and methods of diffusing impurity into and manufacturing a semiconductor wafer

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