DE3840225A1 - Teststruktur und verfahren zur dynamischen belastungsmessung von in einer integrierten schaltung enthaltenen transistoren - Google Patents

Teststruktur und verfahren zur dynamischen belastungsmessung von in einer integrierten schaltung enthaltenen transistoren

Info

Publication number
DE3840225A1
DE3840225A1 DE19883840225 DE3840225A DE3840225A1 DE 3840225 A1 DE3840225 A1 DE 3840225A1 DE 19883840225 DE19883840225 DE 19883840225 DE 3840225 A DE3840225 A DE 3840225A DE 3840225 A1 DE3840225 A1 DE 3840225A1
Authority
DE
Germany
Prior art keywords
transistors
integrated circuit
test structure
output stage
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19883840225
Other languages
German (de)
English (en)
Other versions
DE3840225C2 (enrdf_load_stackoverflow
Inventor
Werner Dipl Phys Dr Weber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Priority to DE19883840225 priority Critical patent/DE3840225A1/de
Publication of DE3840225A1 publication Critical patent/DE3840225A1/de
Application granted granted Critical
Publication of DE3840225C2 publication Critical patent/DE3840225C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]

Landscapes

  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)
DE19883840225 1988-11-29 1988-11-29 Teststruktur und verfahren zur dynamischen belastungsmessung von in einer integrierten schaltung enthaltenen transistoren Granted DE3840225A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19883840225 DE3840225A1 (de) 1988-11-29 1988-11-29 Teststruktur und verfahren zur dynamischen belastungsmessung von in einer integrierten schaltung enthaltenen transistoren

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19883840225 DE3840225A1 (de) 1988-11-29 1988-11-29 Teststruktur und verfahren zur dynamischen belastungsmessung von in einer integrierten schaltung enthaltenen transistoren

Publications (2)

Publication Number Publication Date
DE3840225A1 true DE3840225A1 (de) 1990-05-31
DE3840225C2 DE3840225C2 (enrdf_load_stackoverflow) 1991-10-31

Family

ID=6368098

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19883840225 Granted DE3840225A1 (de) 1988-11-29 1988-11-29 Teststruktur und verfahren zur dynamischen belastungsmessung von in einer integrierten schaltung enthaltenen transistoren

Country Status (1)

Country Link
DE (1) DE3840225A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0568294A3 (en) * 1992-04-27 1994-06-01 Fujitsu Ltd Method for testing semiconductor integrated circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2528700B1 (de) * 1975-06-27 1976-07-22 Ibm Deutschland Pruefschaltung fuer integrierte Halbleiterschaltungen
DE2944149A1 (de) * 1979-11-02 1981-05-14 Philips Patentverwaltung Gmbh, 2000 Hamburg Integrierte schaltungsanordnung in mos-technik

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2528700B1 (de) * 1975-06-27 1976-07-22 Ibm Deutschland Pruefschaltung fuer integrierte Halbleiterschaltungen
DE2944149A1 (de) * 1979-11-02 1981-05-14 Philips Patentverwaltung Gmbh, 2000 Hamburg Integrierte schaltungsanordnung in mos-technik

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
US-Z.: IEEE Electron Device Letters, Vol. EDL-5, No. 12, Dec. 1984, S. 518-520 *
US-Z.: IEEE Transactions on Electron Devices, Vol. ED 32, No. 2, Febr. 1985, S. 375-385 *
W. WEBER et al., 1986 IEDM Digest, S. 390-393 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0568294A3 (en) * 1992-04-27 1994-06-01 Fujitsu Ltd Method for testing semiconductor integrated circuit
US5349290A (en) * 1992-04-27 1994-09-20 Fujitsu Limited Method for testing semiconductor integrated circuit device, voltage drop power supply circuit suitable for the method, and semiconductor integrated circuit device having the voltage drop circuit

Also Published As

Publication number Publication date
DE3840225C2 (enrdf_load_stackoverflow) 1991-10-31

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee