DE3824694A1 - Halbleiterschaltung fuer schnelle schaltvorgaenge - Google Patents

Halbleiterschaltung fuer schnelle schaltvorgaenge

Info

Publication number
DE3824694A1
DE3824694A1 DE3824694A DE3824694A DE3824694A1 DE 3824694 A1 DE3824694 A1 DE 3824694A1 DE 3824694 A DE3824694 A DE 3824694A DE 3824694 A DE3824694 A DE 3824694A DE 3824694 A1 DE3824694 A1 DE 3824694A1
Authority
DE
Germany
Prior art keywords
field effect
transistor
semiconductor circuit
bipolar transistor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE3824694A
Other languages
German (de)
English (en)
Other versions
DE3824694C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Albrecht Dipl Ing Rothermel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atmel Germany GmbH
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority to DE3824694A priority Critical patent/DE3824694A1/de
Priority to EP89112166A priority patent/EP0351634B1/de
Priority to US07/382,065 priority patent/US5036233A/en
Priority to JP1183842A priority patent/JP2653408B2/ja
Publication of DE3824694A1 publication Critical patent/DE3824694A1/de
Application granted granted Critical
Publication of DE3824694C2 publication Critical patent/DE3824694C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/0422—Anti-saturation measures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
DE3824694A 1988-07-20 1988-07-20 Halbleiterschaltung fuer schnelle schaltvorgaenge Granted DE3824694A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE3824694A DE3824694A1 (de) 1988-07-20 1988-07-20 Halbleiterschaltung fuer schnelle schaltvorgaenge
EP89112166A EP0351634B1 (de) 1988-07-20 1989-07-04 Halbleiterschaltung für schnelle Schaltvorgänge
US07/382,065 US5036233A (en) 1988-07-20 1989-07-14 Integrated semiconductor circuit having a unidirectional semiconductor component for preventing saturation of bipolar transistors
JP1183842A JP2653408B2 (ja) 1988-07-20 1989-07-18 高速スイツチング過程用半導体回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3824694A DE3824694A1 (de) 1988-07-20 1988-07-20 Halbleiterschaltung fuer schnelle schaltvorgaenge

Publications (2)

Publication Number Publication Date
DE3824694A1 true DE3824694A1 (de) 1990-02-01
DE3824694C2 DE3824694C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-06-11

Family

ID=6359176

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3824694A Granted DE3824694A1 (de) 1988-07-20 1988-07-20 Halbleiterschaltung fuer schnelle schaltvorgaenge

Country Status (4)

Country Link
US (1) US5036233A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0351634B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP2653408B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3824694A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4321609A1 (de) * 1992-06-29 1994-01-13 Mitsubishi Electric Corp Integrierte Halbleiterschaltung

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68925950T2 (de) * 1988-12-20 1996-07-25 Texas Instruments Inc Hochgeschwindigkeits-EPAL-Leseverstärker
JP2768855B2 (ja) * 1991-01-29 1998-06-25 株式会社東芝 半導体装置
US5481216A (en) * 1994-05-31 1996-01-02 National Semiconductor Corporation Transistor drive circuit with shunt transistor saturation control
US6693478B1 (en) * 2002-08-09 2004-02-17 Texas Instruments Incorporated System and method for implementing soft power up

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3709383A1 (de) * 1987-03-21 1988-09-29 Licentia Gmbh Einrichtung zur ansteuerung von transistorschaltern in darlington-anordnung

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1390034A (en) * 1971-09-22 1975-04-09 Ferranti Ltd Semiconductor information storage devices
US4118640A (en) * 1976-10-22 1978-10-03 National Semiconductor Corporation JFET base junction transistor clamp
US4286175A (en) * 1979-05-21 1981-08-25 Exxon Research & Engineering Co. VMOS/Bipolar dual-triggered switch
US4345171A (en) * 1980-06-30 1982-08-17 Texas Instruments Incorporated Adaptable nonlinear transmission line terminator
US4356416A (en) * 1980-07-17 1982-10-26 General Electric Company Voltage controlled non-saturating semiconductor switch and voltage converter circuit employing same
JPS5753152A (en) * 1980-09-16 1982-03-30 Nec Ic Microcomput Syst Ltd Inverter circuit
CH648434A5 (fr) * 1982-04-23 1985-03-15 Centre Electron Horloger Dispositif semiconducteur presentant une caracteristique de fonctionnement d'un transistor bipolaire et circuit m0s incorporant un tel dispositif.
GB8322650D0 (en) * 1983-08-23 1983-09-28 Plessey Co Plc Logic circuits
US4616146A (en) * 1984-09-04 1986-10-07 Motorola, Inc. BI-CMOS driver circuit
JPS60143012A (ja) * 1984-10-24 1985-07-29 Hitachi Ltd 半導体集積回路装置
JP2544343B2 (ja) * 1985-02-07 1996-10-16 株式会社日立製作所 半導体集積回路装置
JP2568996B2 (ja) * 1985-02-22 1997-01-08 株式会社日立製作所 半導体集積回路装置及びキヤリ−伝播回路
US4755697A (en) * 1985-07-17 1988-07-05 International Rectifier Corporation Bidirectional output semiconductor field effect transistor
US4638186A (en) * 1985-12-02 1987-01-20 Motorola, Inc. BIMOS logic gate
JPS62159515A (ja) * 1986-01-07 1987-07-15 Fuji Electric Co Ltd 複合半導体装置
JPS62214660A (ja) * 1986-03-17 1987-09-21 Toshiba Corp 半導体装置
JPS6382122A (ja) * 1986-09-26 1988-04-12 Toshiba Corp 論理回路
JPS63193720A (ja) * 1987-02-06 1988-08-11 Toshiba Corp 論理回路
US4746817A (en) * 1987-03-16 1988-05-24 International Business Machines Corporation BIFET logic circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3709383A1 (de) * 1987-03-21 1988-09-29 Licentia Gmbh Einrichtung zur ansteuerung von transistorschaltern in darlington-anordnung

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Elektronik, Bd. 16, 8.8.86, S. 78-80,82 *
IBM Techn. Discl. Bull., Vol. 14, No. 5, 1971, S. 1592 *
IEEE J. of. Solid-State Circ., Vol. 23, No. 1, Feb. 1988, S. 5-11 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4321609A1 (de) * 1992-06-29 1994-01-13 Mitsubishi Electric Corp Integrierte Halbleiterschaltung

Also Published As

Publication number Publication date
EP0351634A2 (de) 1990-01-24
DE3824694C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-06-11
EP0351634A3 (de) 1991-02-27
JP2653408B2 (ja) 1997-09-17
US5036233A (en) 1991-07-30
EP0351634B1 (de) 1994-06-01
JPH0267819A (ja) 1990-03-07

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: TEMIC TELEFUNKEN MICROELECTRONIC GMBH, 74072 HEILB

8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: TEMIC SEMICONDUCTOR GMBH, 74072 HEILBRONN, DE

8327 Change in the person/name/address of the patent owner

Owner name: ATMEL GERMANY GMBH, 74072 HEILBRONN, DE