DE3783870D1 - Transistor-gesteuerter elektrooptischer anzeigeschirm und verfahren zu seiner herstellung. - Google Patents

Transistor-gesteuerter elektrooptischer anzeigeschirm und verfahren zu seiner herstellung.

Info

Publication number
DE3783870D1
DE3783870D1 DE8787402275T DE3783870T DE3783870D1 DE 3783870 D1 DE3783870 D1 DE 3783870D1 DE 8787402275 T DE8787402275 T DE 8787402275T DE 3783870 T DE3783870 T DE 3783870T DE 3783870 D1 DE3783870 D1 DE 3783870D1
Authority
DE
Germany
Prior art keywords
transistor
production
display screen
electrooptic display
controlled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787402275T
Other languages
English (en)
Other versions
DE3783870T2 (de
Inventor
Eric Chartier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thomson Grand Public
Original Assignee
Thomson Grand Public
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Grand Public filed Critical Thomson Grand Public
Publication of DE3783870D1 publication Critical patent/DE3783870D1/de
Application granted granted Critical
Publication of DE3783870T2 publication Critical patent/DE3783870T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S359/00—Optical: systems and elements
    • Y10S359/90—Methods

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Liquid Crystal (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
DE8787402275T 1986-10-17 1987-10-13 Transistor-gesteuerter elektrooptischer anzeigeschirm und verfahren zu seiner herstellung. Expired - Fee Related DE3783870T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8614410A FR2605442B1 (fr) 1986-10-17 1986-10-17 Ecran de visualisation electrooptique a transistors de commande et procede de realisation

Publications (2)

Publication Number Publication Date
DE3783870D1 true DE3783870D1 (de) 1993-03-11
DE3783870T2 DE3783870T2 (de) 1993-06-17

Family

ID=9339921

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787402275T Expired - Fee Related DE3783870T2 (de) 1986-10-17 1987-10-13 Transistor-gesteuerter elektrooptischer anzeigeschirm und verfahren zu seiner herstellung.

Country Status (6)

Country Link
US (1) US4938567A (de)
EP (1) EP0267824B1 (de)
JP (1) JP2537150B2 (de)
DE (1) DE3783870T2 (de)
FR (1) FR2605442B1 (de)
WO (1) WO1988002872A1 (de)

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US5166086A (en) * 1985-03-29 1992-11-24 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing same
DE3680806D1 (de) * 1985-03-29 1991-09-19 Matsushita Electric Ind Co Ltd Duennschicht-transistorenanordnung und methode zu deren herstellung.
EP0236629B1 (de) * 1986-03-06 1994-05-18 Kabushiki Kaisha Toshiba Steuerschaltung einer Flüssigkristallanzeige
FR2631743A1 (fr) * 1988-05-23 1989-11-24 Gen Electric Structure a electrodes non coplanaires pour affichage matriciel a cristaux liquides a transistors en couches minces de silicium amorphe et procede de fabrication
DE68921567T2 (de) * 1988-11-30 1995-07-06 Nippon Electric Co Flüssigkristallanzeigetafel mit verminderten Pixeldefekten.
US5212574A (en) * 1989-07-05 1993-05-18 Sharp Kabushiki Kaisha Active matrix board having double-layer scan lines and capacity lines with discontinuous lower scan lines and lower capacity lines
US5053347A (en) * 1989-08-03 1991-10-01 Industrial Technology Research Institute Amorphous silicon thin film transistor with a depletion gate
KR100242438B1 (ko) 1996-08-30 2000-02-01 윤종용 능동 행렬형 액정 표시 장치
US6262784B1 (en) 1993-06-01 2001-07-17 Samsung Electronics Co., Ltd Active matrix display devices having improved opening and contrast ratios and methods of forming same and a storage electrode line
US6313889B1 (en) * 1993-03-04 2001-11-06 Samsung Electronics Co., Ltd. Matrix-type display device capable of being repaired in pixel unit
US5523864A (en) * 1994-01-26 1996-06-04 Displaytech, Inc. Analog liquid crystal spatial light modulator including an internal voltage booster
FR2737342B1 (fr) * 1995-07-25 1997-08-22 Thomson Csf Composant semiconducteur avec dissipateur thermique integre
KR100219118B1 (ko) * 1996-08-30 1999-09-01 구자홍 박막트랜지스터 액정표시장치 및 그 제조방법
GB2307768B (en) * 1995-11-25 1998-06-10 Lg Electronics Inc Matrix array of active matrix lcd and manufacturing method thereof
KR100198543B1 (ko) * 1995-12-27 1999-06-15 구자홍 액정표시장치
KR0181781B1 (ko) * 1995-12-30 1999-05-01 구자홍 액정표시장치의 배열기판 및 그 제조방법
US5894136A (en) * 1996-01-15 1999-04-13 Lg Electronics Inc. Liquid crystal display having a bottom gate TFT switch having a wider active semiconductor layer than a conductive layer on same
JP3097829B2 (ja) * 1996-07-11 2000-10-10 日本電気株式会社 液晶表示パネルおよびその補修方法
JPH1039333A (ja) * 1996-07-19 1998-02-13 Sharp Corp アクティブマトリクス型表示装置およびその欠陥修正方法
JP4643774B2 (ja) * 1997-10-18 2011-03-02 三星電子株式会社 液晶表示装置及びその製造方法
US6287899B1 (en) * 1998-12-31 2001-09-11 Samsung Electronics Co., Ltd. Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same
JP2002050767A (ja) * 2000-08-04 2002-02-15 Mitsubishi Electric Corp 半導体装置及びその製造方法
TW525216B (en) 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
JP4042548B2 (ja) * 2002-11-29 2008-02-06 セイコーエプソン株式会社 電気光学装置及び電子機器
KR100980020B1 (ko) * 2003-08-28 2010-09-03 삼성전자주식회사 박막 트랜지스터 표시판과 그 제조 방법
TWI220775B (en) * 2003-10-03 2004-09-01 Ind Tech Res Inst Multi-layered complementary wire structure and manufacturing method thereof
US7161226B2 (en) * 2003-10-20 2007-01-09 Industrial Technology Research Institute Multi-layered complementary wire structure and manufacturing method thereof
US8421939B2 (en) * 2004-12-17 2013-04-16 Sharp Kabushiki Kaisha Display control substrate, manufacturing method thereof, liquid crystal display panel, electronic information device
US20070002199A1 (en) * 2005-06-30 2007-01-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
TWI301670B (en) * 2005-07-21 2008-10-01 Ind Tech Res Inst Multi-layered complementary wire structure and manufacturing method thereof and manufacturing method of a thin film transistor display array
US7638371B2 (en) * 2006-03-07 2009-12-29 Industrial Technology Research Institute Method for manufacturing thin film transistor display array with dual-layer metal line
TWI299573B (en) * 2006-05-02 2008-08-01 Au Optronics Corp Liquid crystal display array substrate and its manufacturing method
KR101234382B1 (ko) * 2008-05-23 2013-02-18 엘지디스플레이 주식회사 플렉서블 표시장치 및 그 제조 방법
KR101337195B1 (ko) * 2008-10-10 2013-12-05 엘지디스플레이 주식회사 액정표시장치용 어레이기판 및 그의 제조방법, 이를 구비한액정표시장치
WO2011001880A1 (en) 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9239502B2 (en) * 2011-12-23 2016-01-19 Au Optronics Corporation Pixel structure with data line, scan line and gate electrode formed on the same layer and manufacturing method thereof
JP5732500B2 (ja) * 2013-09-06 2015-06-10 株式会社半導体エネルギー研究所 表示装置
JP5779690B2 (ja) * 2014-05-02 2015-09-16 株式会社半導体エネルギー研究所 表示装置及び電子機器
CN104505392A (zh) * 2014-12-29 2015-04-08 合肥鑫晟光电科技有限公司 阵列基板及其制作方法、阵列基板的修复方法、显示装置
JP6007269B2 (ja) * 2015-03-03 2016-10-12 株式会社半導体エネルギー研究所 表示装置及び電子機器
JP6243953B2 (ja) * 2016-04-13 2017-12-06 株式会社半導体エネルギー研究所 半導体装置及び電子機器
JP2017142537A (ja) * 2017-05-11 2017-08-17 株式会社半導体エネルギー研究所 半導体装置及び電子機器

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US4470060A (en) * 1981-01-09 1984-09-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display with vertical non-single crystal semiconductor field effect transistors
FR2533072B1 (fr) * 1982-09-14 1986-07-18 Coissard Pierre Procede de fabrication de circuits electroniques a base de transistors en couches minces et de condensateurs
JPS60160173A (ja) * 1984-01-30 1985-08-21 Sharp Corp 薄膜トランジスタ
JPS613118A (ja) * 1984-06-16 1986-01-09 Canon Inc トランジスタ基板
JPH0693166B2 (ja) * 1984-09-05 1994-11-16 株式会社日立製作所 液晶素子
JPS62109085A (ja) * 1985-11-08 1987-05-20 富士電機株式会社 アクテイブ・マトリクス

Also Published As

Publication number Publication date
FR2605442B1 (fr) 1988-12-09
FR2605442A1 (fr) 1988-04-22
EP0267824B1 (de) 1993-01-27
JPH01501100A (ja) 1989-04-13
WO1988002872A1 (fr) 1988-04-21
JP2537150B2 (ja) 1996-09-25
EP0267824A1 (de) 1988-05-18
US4938567A (en) 1990-07-03
DE3783870T2 (de) 1993-06-17

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee