DE3771258D1 - Halbleiter-speicheranordnung unter verwendung eines programmierbaren elementes vom uebergangs-kurzschluss-typ. - Google Patents
Halbleiter-speicheranordnung unter verwendung eines programmierbaren elementes vom uebergangs-kurzschluss-typ.Info
- Publication number
- DE3771258D1 DE3771258D1 DE8787103318T DE3771258T DE3771258D1 DE 3771258 D1 DE3771258 D1 DE 3771258D1 DE 8787103318 T DE8787103318 T DE 8787103318T DE 3771258 T DE3771258 T DE 3771258T DE 3771258 D1 DE3771258 D1 DE 3771258D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- short circuit
- circuit type
- memory arrangement
- programmable element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61053201A JPS62210667A (ja) | 1986-03-11 | 1986-03-11 | 半導体記憶装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3771258D1 true DE3771258D1 (de) | 1991-08-14 |
Family
ID=12936258
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787103318T Expired - Fee Related DE3771258D1 (de) | 1986-03-11 | 1987-03-09 | Halbleiter-speicheranordnung unter verwendung eines programmierbaren elementes vom uebergangs-kurzschluss-typ. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4835590A (de) |
EP (1) | EP0241699B1 (de) |
JP (1) | JPS62210667A (de) |
KR (1) | KR900008668B1 (de) |
DE (1) | DE3771258D1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2569634B2 (ja) * | 1987-11-26 | 1997-01-08 | 日本電気株式会社 | 接合破壊型半導体記憶装置 |
JP2504553B2 (ja) * | 1989-01-09 | 1996-06-05 | 株式会社東芝 | バイポ―ラトランジスタを有する半導体装置の製造方法 |
US5198692A (en) * | 1989-01-09 | 1993-03-30 | Kabushiki Kaisha Toshiba | Semiconductor device including bipolar transistor with step impurity profile having low and high concentration emitter regions |
GB9007492D0 (en) * | 1990-04-03 | 1990-05-30 | Pilkington Micro Electronics | Semiconductor integrated circuit |
FR2663156A1 (fr) * | 1990-06-11 | 1991-12-13 | Sgs Thomson Microelectronics | Transistor bipolaire supportant des polarisations inverses et procede de fabrication. |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL162511C (nl) * | 1969-01-11 | 1980-05-16 | Philips Nv | Geintegreerde halfgeleiderschakeling met een laterale transistor en werkwijze voor het vervaardigen van de geintegreerde halfgeleiderschakeling. |
US4388703A (en) * | 1979-05-10 | 1983-06-14 | General Electric Company | Memory device |
JPS5953711B2 (ja) * | 1980-03-25 | 1984-12-26 | 日本電気株式会社 | メモリセル |
DE3029553A1 (de) * | 1980-08-04 | 1982-03-11 | Siemens AG, 1000 Berlin und 8000 München | Transistoranordnung mit hoher kollektor-emitter-durchbruchsspannung |
JPS60142559A (ja) * | 1983-12-29 | 1985-07-27 | Fujitsu Ltd | プログラマブル・リ−ド・オンリ・メモリ |
US4701780A (en) * | 1985-03-14 | 1987-10-20 | Harris Corporation | Integrated verticle NPN and vertical oxide fuse programmable memory cell |
US4748490A (en) * | 1985-08-01 | 1988-05-31 | Texas Instruments Incorporated | Deep polysilicon emitter antifuse memory cell |
-
1986
- 1986-03-11 JP JP61053201A patent/JPS62210667A/ja active Granted
-
1987
- 1987-03-09 DE DE8787103318T patent/DE3771258D1/de not_active Expired - Fee Related
- 1987-03-09 EP EP87103318A patent/EP0241699B1/de not_active Expired
- 1987-03-10 US US07/024,220 patent/US4835590A/en not_active Expired - Fee Related
- 1987-03-11 KR KR8702173A patent/KR900008668B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH0551184B2 (de) | 1993-07-30 |
KR900008668B1 (en) | 1990-11-26 |
EP0241699A3 (en) | 1988-09-21 |
EP0241699B1 (de) | 1991-07-10 |
EP0241699A2 (de) | 1987-10-21 |
JPS62210667A (ja) | 1987-09-16 |
US4835590A (en) | 1989-05-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |