DE3766780D1 - Stromquelle mit aktiver ladung und verfahren zu ihrer ausfuehrung. - Google Patents

Stromquelle mit aktiver ladung und verfahren zu ihrer ausfuehrung.

Info

Publication number
DE3766780D1
DE3766780D1 DE8787401816T DE3766780T DE3766780D1 DE 3766780 D1 DE3766780 D1 DE 3766780D1 DE 8787401816 T DE8787401816 T DE 8787401816T DE 3766780 T DE3766780 T DE 3766780T DE 3766780 D1 DE3766780 D1 DE 3766780D1
Authority
DE
Germany
Prior art keywords
implementing
power source
active charge
charge
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787401816T
Other languages
English (en)
Inventor
Pham Ngu Tung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3766780D1 publication Critical patent/DE3766780D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Logic Circuits (AREA)
DE8787401816T 1986-08-19 1987-08-05 Stromquelle mit aktiver ladung und verfahren zu ihrer ausfuehrung. Expired - Fee Related DE3766780D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8611836A FR2603146B1 (fr) 1986-08-19 1986-08-19 Source de courant de type charge active et son procede de realisation

Publications (1)

Publication Number Publication Date
DE3766780D1 true DE3766780D1 (de) 1991-01-31

Family

ID=9338367

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787401816T Expired - Fee Related DE3766780D1 (de) 1986-08-19 1987-08-05 Stromquelle mit aktiver ladung und verfahren zu ihrer ausfuehrung.

Country Status (5)

Country Link
US (1) US4814835A (de)
EP (1) EP0259207B1 (de)
JP (1) JPS6352481A (de)
DE (1) DE3766780D1 (de)
FR (1) FR2603146B1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252843A (en) * 1989-09-01 1993-10-12 Fujitsu Limited Semiconductor device having overlapping conductor layers
JP2513887B2 (ja) * 1990-02-14 1996-07-03 株式会社東芝 半導体集積回路装置
JPH0414314A (ja) * 1990-05-08 1992-01-20 Toshiba Corp ソース電極結合形論理回路
KR100356883B1 (ko) * 1991-06-12 2003-01-08 텍사스 인스트루먼츠 인코포레이티드 프리차지트리거링방법,프리차지트리거드디지탈디바이스,프리차지트리거드펑션스테이지,및동기식파이프라인시스템

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2413782A1 (fr) * 1977-12-30 1979-07-27 Radiotechnique Compelec Element de circuit integre destine aux memoires bipolaires a isolement lateral par oxyde
US4485390A (en) * 1978-03-27 1984-11-27 Ncr Corporation Narrow channel FET
FR2449369A1 (fr) * 1979-02-13 1980-09-12 Thomson Csf Circuit logique comportant une resistance saturable
JPS5874084A (ja) * 1981-10-29 1983-05-04 Fujitsu Ltd 半導体装置
JPS60137070A (ja) * 1983-12-26 1985-07-20 Toshiba Corp 半導体装置の製造方法
JPS6155971A (ja) * 1984-08-27 1986-03-20 Sumitomo Electric Ind Ltd シヨツトキ−ゲ−ト電界効果トランジスタ

Also Published As

Publication number Publication date
FR2603146B1 (fr) 1988-11-10
EP0259207B1 (de) 1990-12-19
US4814835A (en) 1989-03-21
EP0259207A1 (de) 1988-03-09
JPS6352481A (ja) 1988-03-05
FR2603146A1 (fr) 1988-02-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee