DE3706698C2 - Verfahren und Anordnung zum Zerstäuben eines Materials mittels Hochfrequenz - Google Patents

Verfahren und Anordnung zum Zerstäuben eines Materials mittels Hochfrequenz

Info

Publication number
DE3706698C2
DE3706698C2 DE19873706698 DE3706698A DE3706698C2 DE 3706698 C2 DE3706698 C2 DE 3706698C2 DE 19873706698 DE19873706698 DE 19873706698 DE 3706698 A DE3706698 A DE 3706698A DE 3706698 C2 DE3706698 C2 DE 3706698C2
Authority
DE
Germany
Prior art keywords
counter electrode
electrode
magnetic field
area
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19873706698
Other languages
German (de)
English (en)
Other versions
DE3706698A1 (de
Inventor
Klaus Wellerdieck
Urs Wegmann
Karl Dipl Phys Dr Hoefler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC Oerlikon Balzers AG
Original Assignee
Balzers AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Balzers AG filed Critical Balzers AG
Publication of DE3706698A1 publication Critical patent/DE3706698A1/de
Application granted granted Critical
Publication of DE3706698C2 publication Critical patent/DE3706698C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
DE19873706698 1986-06-23 1987-03-02 Verfahren und Anordnung zum Zerstäuben eines Materials mittels Hochfrequenz Expired - Fee Related DE3706698C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH251686A CH668565A5 (de) 1986-06-23 1986-06-23 Verfahren und anordnung zum zerstaeuben eines materials mittels hochfrequenz.

Publications (2)

Publication Number Publication Date
DE3706698A1 DE3706698A1 (de) 1988-01-14
DE3706698C2 true DE3706698C2 (de) 1996-11-14

Family

ID=4235545

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873706698 Expired - Fee Related DE3706698C2 (de) 1986-06-23 1987-03-02 Verfahren und Anordnung zum Zerstäuben eines Materials mittels Hochfrequenz

Country Status (5)

Country Link
JP (1) JP2898635B2 (ja)
CH (1) CH668565A5 (ja)
DE (1) DE3706698C2 (ja)
FR (1) FR2600269B1 (ja)
GB (1) GB2191787B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006020291A1 (de) * 2006-04-27 2007-10-31 Ipt Ionen- Und Plasmatechnik Gmbh Plasmaquelle
DE102006020290A1 (de) * 2006-04-27 2007-11-08 Ipt Ionen- Und Plasmatechnik Gmbh Plasmaquelle

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3920834A1 (de) * 1989-06-24 1991-02-21 Leybold Ag Mikrowellen-kathodenzerstaeubungseinrichtung
DE4042417C2 (de) * 1990-07-17 1993-11-25 Balzers Hochvakuum Ätz- oder Beschichtungsanlage sowie Verfahren zu ihrem Zünden oder intermittierenden Betreiben
DE4022708A1 (de) * 1990-07-17 1992-04-02 Balzers Hochvakuum Aetz- oder beschichtungsanlagen
JPH04280968A (ja) * 1990-10-22 1992-10-06 Varian Assoc Inc 高真空マグネトロンスパッタ装置
DE4306611B4 (de) * 1993-03-03 2004-04-15 Unaxis Deutschland Holding Gmbh Vorrichtung zur Oberflächenbehandlung von Substraten durch Plasmaeinwirkung
DE19609248A1 (de) * 1996-02-23 1997-08-28 Balzers Prozes Systeme Gmbh Vorrichtung zum Beschichten von Substraten mittels Kathodenzerstäubung mit einem Hohltarget
DE19609249A1 (de) * 1996-02-23 1997-08-28 Balzers Prozes Systeme Gmbh Vorrichtung zum Beschichten von Substraten mittels Kathodenzerstäubung mit einem Hohltarget
JPH09228038A (ja) * 1996-02-23 1997-09-02 Balzers Prozes Syst Gmbh 中空のターゲットを備えた、陰極スパッタによりサブストレートを被覆するための装置
US5716505A (en) * 1996-02-23 1998-02-10 Balzers Prozess-Systems Gmbh Apparatus for coating substrates by cathode sputtering with a hollow target
US6514390B1 (en) 1996-10-17 2003-02-04 Applied Materials, Inc. Method to eliminate coil sputtering in an ICP source
US6413381B1 (en) 2000-04-12 2002-07-02 Steag Hamatech Ag Horizontal sputtering system
US6264804B1 (en) 2000-04-12 2001-07-24 Ske Technology Corp. System and method for handling and masking a substrate in a sputter deposition system
DE10234859B4 (de) * 2002-07-31 2007-05-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Einrichtung und Verfahren zum Beschichten von Substraten
WO2010058366A1 (en) 2008-11-24 2010-05-27 Oc Oerlikon Balzers Ag Rf sputtering arrangement
EP2382648B1 (en) 2008-12-23 2016-10-05 Oerlikon Advanced Technologies AG Rf sputtering arrangement
DE102012110927A1 (de) * 2012-11-14 2014-05-15 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zur plasmagestützten Vakuumbehandlung von Substraten

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB776515A (en) * 1955-09-30 1957-06-05 Standard Telephones Cables Ltd Improvements in or relating to ion trap arrangements
US3330752A (en) * 1964-12-31 1967-07-11 Ibm Method and apparatus for cathode sputtering including suppressing temperature rise adjacent the anode using a localized magnetic field
US3369991A (en) * 1965-01-28 1968-02-20 Ibm Apparatus for cathode sputtering including a shielded rf electrode
US3644191A (en) * 1968-03-15 1972-02-22 Tokyo Shibaura Electric Co Sputtering apparatus
US3661761A (en) * 1969-06-02 1972-05-09 Ibm Rf sputtering apparatus for promoting resputtering of film during deposition
GB1358411A (en) * 1972-11-02 1974-07-03 Electrical Res Ass Sputtering
US4166018A (en) * 1974-01-31 1979-08-28 Airco, Inc. Sputtering process and apparatus
NL7607473A (nl) * 1976-07-07 1978-01-10 Philips Nv Verstuifinrichting en werkwijze voor het ver- stuiven met een dergelijke inrichting.
GB1569117A (en) * 1976-11-03 1980-06-11 Tokudo Seisakusho Kk Sputtering device
US4278528A (en) * 1979-10-09 1981-07-14 Coulter Systems Corporation Rectilinear sputtering apparatus and method
JPS5816078A (ja) * 1981-07-17 1983-01-29 Toshiba Corp プラズマエツチング装置
JPS58141387A (ja) * 1982-02-16 1983-08-22 Anelva Corp スパツタ装置
US4466872A (en) * 1982-12-23 1984-08-21 At&T Technologies, Inc. Methods of and apparatus for depositing a continuous film of minimum thickness
JPS6058794A (ja) * 1983-09-09 1985-04-04 Nec Corp 電話交換装置
CH659484A5 (de) * 1984-04-19 1987-01-30 Balzers Hochvakuum Anordnung zur beschichtung von substraten mittels kathodenzerstaeubung.
JPS6074436A (ja) * 1984-09-11 1985-04-26 Ulvac Corp スパツタエツチング装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006020291A1 (de) * 2006-04-27 2007-10-31 Ipt Ionen- Und Plasmatechnik Gmbh Plasmaquelle
DE102006020290A1 (de) * 2006-04-27 2007-11-08 Ipt Ionen- Und Plasmatechnik Gmbh Plasmaquelle
DE102006020290B4 (de) * 2006-04-27 2010-04-15 Ipt Ionen- Und Plasmatechnik Gmbh Plasmaquelle

Also Published As

Publication number Publication date
DE3706698A1 (de) 1988-01-14
GB2191787B (en) 1991-03-13
GB2191787A (en) 1987-12-23
FR2600269A1 (fr) 1987-12-24
JPS634065A (ja) 1988-01-09
FR2600269B1 (fr) 1992-10-02
GB8710331D0 (en) 1987-06-03
JP2898635B2 (ja) 1999-06-02
CH668565A5 (de) 1989-01-13

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: C23F 4/00

8127 New person/name/address of the applicant

Owner name: BALZERS AG, BALZERS, LI

8128 New person/name/address of the agent

Representative=s name: GLAWE, DELFS, MOLL & PARTNER, PATENTANWAELTE, 8053

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee