DE3704200C2 - - Google Patents

Info

Publication number
DE3704200C2
DE3704200C2 DE3704200A DE3704200A DE3704200C2 DE 3704200 C2 DE3704200 C2 DE 3704200C2 DE 3704200 A DE3704200 A DE 3704200A DE 3704200 A DE3704200 A DE 3704200A DE 3704200 C2 DE3704200 C2 DE 3704200C2
Authority
DE
Germany
Prior art keywords
wire
conductor track
aluminum
diffusion barrier
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3704200A
Other languages
German (de)
English (en)
Other versions
DE3704200A1 (de
Inventor
Tomislav Dipl.-Ing. 6915 Dossenheim De Okstajner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HERA ROTTERDAM B.V., ROTTERDAM, NL
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DE19873704200 priority Critical patent/DE3704200A1/de
Priority to EP88101661A priority patent/EP0278413A3/de
Priority to JP63029994A priority patent/JPS63204620A/ja
Publication of DE3704200A1 publication Critical patent/DE3704200A1/de
Application granted granted Critical
Publication of DE3704200C2 publication Critical patent/DE3704200C2/de
Granted legal-status Critical Current

Links

Classifications

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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/049—Wire bonding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
DE19873704200 1987-02-11 1987-02-11 Verfahren zur herstellung einer verbindung zwischen einem bonddraht und einer kontaktflaeche bei hybriden dickschicht-schaltkreisen Granted DE3704200A1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE19873704200 DE3704200A1 (de) 1987-02-11 1987-02-11 Verfahren zur herstellung einer verbindung zwischen einem bonddraht und einer kontaktflaeche bei hybriden dickschicht-schaltkreisen
EP88101661A EP0278413A3 (de) 1987-02-11 1988-02-05 Verfahren zur Herstellung einer Verbindung zwischen einem Bonddraht und einer Kontaktfläche bei hybriden Dickschicht-Schaltkreisen
JP63029994A JPS63204620A (ja) 1987-02-11 1988-02-10 ハイブリッド厚膜回路におけるボンデイングワイヤとコンタクト領域との間の接続形成方法

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Application Number Priority Date Filing Date Title
DE19873704200 DE3704200A1 (de) 1987-02-11 1987-02-11 Verfahren zur herstellung einer verbindung zwischen einem bonddraht und einer kontaktflaeche bei hybriden dickschicht-schaltkreisen

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DE3704200A1 DE3704200A1 (de) 1988-08-25
DE3704200C2 true DE3704200C2 (US06521211-20030218-C00004.png) 1991-11-28

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DE19873704200 Granted DE3704200A1 (de) 1987-02-11 1987-02-11 Verfahren zur herstellung einer verbindung zwischen einem bonddraht und einer kontaktflaeche bei hybriden dickschicht-schaltkreisen

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EP (1) EP0278413A3 (US06521211-20030218-C00004.png)
JP (1) JPS63204620A (US06521211-20030218-C00004.png)
DE (1) DE3704200A1 (US06521211-20030218-C00004.png)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
US8485418B2 (en) 1995-05-26 2013-07-16 Formfactor, Inc. Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out

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US5272596A (en) * 1991-06-24 1993-12-21 At&T Bell Laboratories Personal data card fabricated from a polymer thick-film circuit
US6835898B2 (en) 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US6336269B1 (en) 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
EP0792517B1 (en) * 1994-11-15 2003-10-22 Formfactor, Inc. Electrical contact structures from flexible wire
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
DE10205609A1 (de) * 2002-02-11 2003-08-28 Infineon Technologies Ag Anordnung zum Drahtbonden und Verfahren zur Herstellung einer Bondverbindung

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US3585461A (en) * 1968-02-19 1971-06-15 Westinghouse Electric Corp High reliability semiconductive devices and integrated circuits
US3480412A (en) * 1968-09-03 1969-11-25 Fairchild Camera Instr Co Method of fabrication of solder reflow interconnections for face down bonding of semiconductor devices
US3544704A (en) * 1969-01-21 1970-12-01 Motorola Inc Bonding islands for hybrid circuits
US3601666A (en) * 1969-08-21 1971-08-24 Texas Instruments Inc Titanium tungsten-gold contacts for semiconductor devices
US3590060A (en) * 1969-09-22 1971-06-29 Dow Corning Fluroalkyltin compounds
US4176443A (en) * 1977-03-08 1979-12-04 Sgs-Ates Componenti Elettronici S.P.A. Method of connecting semiconductor structure to external circuits
DE2748239A1 (de) * 1977-10-27 1979-05-03 Siemens Ag Verfahren zum kontaktieren eines elektrischen kaltleiter-widerstandes mit einem anschlusselement
JPS54162457A (en) * 1978-06-14 1979-12-24 Toshiba Corp Electrode forming method for semiconductor element
DE3115856A1 (de) * 1980-04-22 1982-01-21 Ferranti Ltd., Gatley, Cheadle, Cheshire Elektrische schaltungsanordnung
DE3023528C2 (de) * 1980-06-24 1984-11-29 W.C. Heraeus Gmbh, 6450 Hanau Aluminium enthaltender Feinstdraht
JPS5778145A (en) * 1980-10-31 1982-05-15 Toshiba Corp Forming method for bonding pad of semiconductor chip
JPS584955A (ja) * 1981-06-30 1983-01-12 Shinko Electric Ind Co Ltd 金めつきされた電子部品パツケ−ジ
DD200954A1 (de) * 1981-10-20 1983-06-22 Wolfgang Werner Mikrodraht aus aluminium fuer das drahtbonden
US4447857A (en) * 1981-12-09 1984-05-08 International Business Machines Corporation Substrate with multiple type connections
JPS6016463A (ja) * 1983-07-08 1985-01-28 Agency Of Ind Science & Technol オ−ム性電極
JPS6097655A (ja) * 1983-11-02 1985-05-31 Hitachi Ltd ボンデイング用ワイヤ
JPS61256766A (ja) * 1985-05-10 1986-11-14 Hitachi Ltd 化合物半導体用電極

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8485418B2 (en) 1995-05-26 2013-07-16 Formfactor, Inc. Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out

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Publication number Publication date
EP0278413A3 (de) 1989-03-29
DE3704200A1 (de) 1988-08-25
JPS63204620A (ja) 1988-08-24
EP0278413A2 (de) 1988-08-17

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