DE3686282D1 - Halbleiterspeicher. - Google Patents

Halbleiterspeicher.

Info

Publication number
DE3686282D1
DE3686282D1 DE8686104082T DE3686282T DE3686282D1 DE 3686282 D1 DE3686282 D1 DE 3686282D1 DE 8686104082 T DE8686104082 T DE 8686104082T DE 3686282 T DE3686282 T DE 3686282T DE 3686282 D1 DE3686282 D1 DE 3686282D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686104082T
Other languages
English (en)
Other versions
DE3686282T2 (de
Inventor
Kazumasa Yanagisawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60058359A external-priority patent/JPH0766660B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3686282D1 publication Critical patent/DE3686282D1/de
Publication of DE3686282T2 publication Critical patent/DE3686282T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

DE19863686282 1985-03-25 1986-03-25 Halbleiterspeicher. Expired - Fee Related DE3686282T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60058359A JPH0766660B2 (ja) 1985-03-25 1985-03-25 ダイナミツク型ｒａｍ

Publications (2)

Publication Number Publication Date
DE3686282D1 true DE3686282D1 (de) 1992-09-10
DE3686282T2 DE3686282T2 (de) 1993-03-18

Family

ID=13082121

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863686282 Expired - Fee Related DE3686282T2 (de) 1985-03-25 1986-03-25 Halbleiterspeicher.

Country Status (2)

Country Link
CN (1) CN86101206B (de)
DE (1) DE3686282T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6940773B2 (en) * 2003-04-02 2005-09-06 Infineon Technologies Ag Method and system for manufacturing DRAMs with reduced self-refresh current requirements
KR101798920B1 (ko) * 2010-11-30 2017-11-17 삼성전자주식회사 다중 주기 셀프 리프레쉬를 수행하는 반도체 메모리 장치 및이의 검증 방법

Also Published As

Publication number Publication date
CN86101206B (zh) 1988-08-24
DE3686282T2 (de) 1993-03-18
CN86101206A (zh) 1987-02-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee