DE3685239D1 - Halbleiterlaser-vielfachanordnung. - Google Patents
Halbleiterlaser-vielfachanordnung.Info
- Publication number
- DE3685239D1 DE3685239D1 DE8686301414T DE3685239T DE3685239D1 DE 3685239 D1 DE3685239 D1 DE 3685239D1 DE 8686301414 T DE8686301414 T DE 8686301414T DE 3685239 T DE3685239 T DE 3685239T DE 3685239 D1 DE3685239 D1 DE 3685239D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- multiple arrangement
- laser multiple
- arrangement
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60041756A JPS61222188A (ja) | 1985-02-28 | 1985-02-28 | 半導体レ−ザアレイ素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3685239D1 true DE3685239D1 (de) | 1992-06-17 |
Family
ID=12617260
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686301414T Expired - Lifetime DE3685239D1 (de) | 1985-02-28 | 1986-02-27 | Halbleiterlaser-vielfachanordnung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4750185A (de) |
EP (1) | EP0193404B1 (de) |
JP (1) | JPS61222188A (de) |
DE (1) | DE3685239D1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4901329A (en) * | 1988-10-31 | 1990-02-13 | International Business Machines Corporation | Integrated laser arrays and support circuits |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4185256A (en) * | 1978-01-13 | 1980-01-22 | Xerox Corporation | Mode control of heterojunction injection lasers and method of fabrication |
US4385389A (en) * | 1980-07-14 | 1983-05-24 | Rca Corporation | Phase-locked CDH-LOC injection laser array |
JPS57170583A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Semiconductor laser device |
JPS59100583A (ja) * | 1982-12-01 | 1984-06-09 | Hitachi Ltd | 半導体レ−ザ装置 |
US4594718A (en) * | 1983-02-01 | 1986-06-10 | Xerox Corporation | Combination index/gain guided semiconductor lasers |
WO1985000076A1 (en) * | 1983-06-17 | 1985-01-03 | Rca Corporation | Phase-locked semiconductor laser array and a method of making same |
US4624000A (en) * | 1984-11-01 | 1986-11-18 | Xerox Corporation | Phased array semiconductor lasers with preferred emission in a single lobe |
-
1985
- 1985-02-28 JP JP60041756A patent/JPS61222188A/ja active Pending
-
1986
- 1986-02-27 EP EP86301414A patent/EP0193404B1/de not_active Expired
- 1986-02-27 US US06/833,321 patent/US4750185A/en not_active Expired - Fee Related
- 1986-02-27 DE DE8686301414T patent/DE3685239D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS61222188A (ja) | 1986-10-02 |
EP0193404A2 (de) | 1986-09-03 |
EP0193404A3 (en) | 1987-12-16 |
US4750185A (en) | 1988-06-07 |
EP0193404B1 (de) | 1992-05-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |