DE3685239D1 - Halbleiterlaser-vielfachanordnung. - Google Patents

Halbleiterlaser-vielfachanordnung.

Info

Publication number
DE3685239D1
DE3685239D1 DE8686301414T DE3685239T DE3685239D1 DE 3685239 D1 DE3685239 D1 DE 3685239D1 DE 8686301414 T DE8686301414 T DE 8686301414T DE 3685239 T DE3685239 T DE 3685239T DE 3685239 D1 DE3685239 D1 DE 3685239D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
multiple arrangement
laser multiple
arrangement
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686301414T
Other languages
English (en)
Inventor
Shigeki Maei
Hiroshi Hayashi
Saburo Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3685239D1 publication Critical patent/DE3685239D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE8686301414T 1985-02-28 1986-02-27 Halbleiterlaser-vielfachanordnung. Expired - Lifetime DE3685239D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60041756A JPS61222188A (ja) 1985-02-28 1985-02-28 半導体レ−ザアレイ素子

Publications (1)

Publication Number Publication Date
DE3685239D1 true DE3685239D1 (de) 1992-06-17

Family

ID=12617260

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686301414T Expired - Lifetime DE3685239D1 (de) 1985-02-28 1986-02-27 Halbleiterlaser-vielfachanordnung.

Country Status (4)

Country Link
US (1) US4750185A (de)
EP (1) EP0193404B1 (de)
JP (1) JPS61222188A (de)
DE (1) DE3685239D1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4901329A (en) * 1988-10-31 1990-02-13 International Business Machines Corporation Integrated laser arrays and support circuits

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4185256A (en) * 1978-01-13 1980-01-22 Xerox Corporation Mode control of heterojunction injection lasers and method of fabrication
US4385389A (en) * 1980-07-14 1983-05-24 Rca Corporation Phase-locked CDH-LOC injection laser array
JPS57170583A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Semiconductor laser device
JPS59100583A (ja) * 1982-12-01 1984-06-09 Hitachi Ltd 半導体レ−ザ装置
US4594718A (en) * 1983-02-01 1986-06-10 Xerox Corporation Combination index/gain guided semiconductor lasers
WO1985000076A1 (en) * 1983-06-17 1985-01-03 Rca Corporation Phase-locked semiconductor laser array and a method of making same
US4624000A (en) * 1984-11-01 1986-11-18 Xerox Corporation Phased array semiconductor lasers with preferred emission in a single lobe

Also Published As

Publication number Publication date
EP0193404B1 (de) 1992-05-13
JPS61222188A (ja) 1986-10-02
EP0193404A3 (en) 1987-12-16
EP0193404A2 (de) 1986-09-03
US4750185A (en) 1988-06-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee