DE3684838D1 - Amorphe photovoltaische elemente. - Google Patents

Amorphe photovoltaische elemente.

Info

Publication number
DE3684838D1
DE3684838D1 DE8686111998T DE3684838T DE3684838D1 DE 3684838 D1 DE3684838 D1 DE 3684838D1 DE 8686111998 T DE8686111998 T DE 8686111998T DE 3684838 T DE3684838 T DE 3684838T DE 3684838 D1 DE3684838 D1 DE 3684838D1
Authority
DE
Germany
Prior art keywords
amorph
photovoltaic elements
photovoltaic
elements
amorph photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686111998T
Other languages
English (en)
Inventor
Masayuki Ishii
Nobuhiko Fujita
Hajime Hitotsuyanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE3684838D1 publication Critical patent/DE3684838D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
DE8686111998T 1985-08-29 1986-08-29 Amorphe photovoltaische elemente. Expired - Fee Related DE3684838D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60190500A JPS6249672A (ja) 1985-08-29 1985-08-29 アモルフアス光起電力素子

Publications (1)

Publication Number Publication Date
DE3684838D1 true DE3684838D1 (de) 1992-05-21

Family

ID=16259123

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686111998T Expired - Fee Related DE3684838D1 (de) 1985-08-29 1986-08-29 Amorphe photovoltaische elemente.

Country Status (4)

Country Link
US (1) US4728370A (de)
EP (1) EP0213622B1 (de)
JP (1) JPS6249672A (de)
DE (1) DE3684838D1 (de)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6191974A (ja) * 1984-10-11 1986-05-10 Kanegafuchi Chem Ind Co Ltd 耐熱性マルチジヤンクシヨン型半導体素子
DE3850157T2 (de) * 1987-03-23 1995-02-09 Hitachi Ltd Photoelektrische Umwandlungsanordnung.
FR2646560B1 (fr) * 1989-04-27 1994-01-14 Solems Sa Procede pour ameliorer la reponse spectrale d'une structure photoconductrice, cellule solaire et structure photoreceptive ameliorees
JP2784819B2 (ja) * 1989-10-17 1998-08-06 キヤノン株式会社 光起電力素子
JP2784820B2 (ja) * 1989-10-17 1998-08-06 キヤノン株式会社 光起電力素子
JP2644901B2 (ja) * 1990-01-19 1997-08-25 株式会社日立製作所 ｐｉｎ型アモルファスシリコン太陽電池の製造方法
JP2895213B2 (ja) * 1990-11-26 1999-05-24 キヤノン株式会社 光起電力素子
JP2918345B2 (ja) * 1991-02-20 1999-07-12 キヤノン株式会社 光起電力素子
US5256887A (en) * 1991-07-19 1993-10-26 Solarex Corporation Photovoltaic device including a boron doping profile in an i-type layer
DE4419273C2 (de) * 1994-06-01 1998-11-26 Forschungszentrum Juelich Gmbh Dünnschicht-Solarzelle
JP3025179B2 (ja) * 1995-09-28 2000-03-27 キヤノン株式会社 光電変換素子の形成方法
JPH11186587A (ja) * 1997-12-18 1999-07-09 Sanyo Electric Co Ltd 光検出素子
US6222117B1 (en) * 1998-01-05 2001-04-24 Canon Kabushiki Kaisha Photovoltaic device, manufacturing method of photovoltaic device, photovoltaic device integrated with building material and power-generating apparatus
JP3980159B2 (ja) * 1998-03-05 2007-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3364180B2 (ja) 1999-01-18 2003-01-08 三菱重工業株式会社 非晶質シリコン太陽電池
US6246071B1 (en) * 1999-09-23 2001-06-12 The United States Of America As Represented By The Secretary Of The Navy Zirconia-containing transparent and conducting oxides
JP2003069055A (ja) * 2001-06-13 2003-03-07 Sharp Corp 太陽電池セルとその製造方法
TW541710B (en) 2001-06-27 2003-07-11 Epistar Corp LED having transparent substrate and the manufacturing method thereof
US7122736B2 (en) 2001-08-16 2006-10-17 Midwest Research Institute Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique
DE102004003761A1 (de) * 2004-01-23 2005-08-25 Forschungszentrum Jülich GmbH Herstellungsverfahren für Siliziumsolarzellen umfassend µc-Siliziumschichten
JP4691889B2 (ja) * 2004-03-18 2011-06-01 凸版印刷株式会社 非単結晶太陽電池および非単結晶太陽電池の製造方法
US7655542B2 (en) * 2006-06-23 2010-02-02 Applied Materials, Inc. Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
US7982127B2 (en) * 2006-12-29 2011-07-19 Industrial Technology Research Institute Thin film solar cell module of see-through type
US7582515B2 (en) * 2007-01-18 2009-09-01 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080173350A1 (en) * 2007-01-18 2008-07-24 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US8203071B2 (en) * 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080223440A1 (en) * 2007-01-18 2008-09-18 Shuran Sheng Multi-junction solar cells and methods and apparatuses for forming the same
US20080245414A1 (en) * 2007-04-09 2008-10-09 Shuran Sheng Methods for forming a photovoltaic device with low contact resistance
US7875486B2 (en) * 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
KR20100095426A (ko) * 2007-11-02 2010-08-30 어플라이드 머티어리얼스, 인코포레이티드 증착 공정들 간의 플라즈마 처리
US20090130827A1 (en) * 2007-11-02 2009-05-21 Soo Young Choi Intrinsic amorphous silicon layer
KR100927661B1 (ko) * 2007-11-05 2009-11-20 한국전자통신연구원 광신호를 전기적 신호로 변환시키는 수광 소자
US20100116942A1 (en) * 2008-06-09 2010-05-13 Fitzgerald Eugene A High-efficiency solar cell structures
US8895842B2 (en) * 2008-08-29 2014-11-25 Applied Materials, Inc. High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells
US20100059110A1 (en) * 2008-09-11 2010-03-11 Applied Materials, Inc. Microcrystalline silicon alloys for thin film and wafer based solar applications
US20110124146A1 (en) * 2009-05-29 2011-05-26 Pitera Arthur J Methods of forming high-efficiency multi-junction solar cell structures
US20110114177A1 (en) * 2009-07-23 2011-05-19 Applied Materials, Inc. Mixed silicon phase film for high efficiency thin film silicon solar cells
KR100989615B1 (ko) * 2009-09-02 2010-10-26 엘지전자 주식회사 태양전지
WO2011046664A2 (en) * 2009-10-15 2011-04-21 Applied Materials, Inc. A barrier layer disposed between a substrate and a transparent conductive oxide layer for thin film silicon solar cells
US20110088760A1 (en) * 2009-10-20 2011-04-21 Applied Materials, Inc. Methods of forming an amorphous silicon layer for thin film solar cell application
US20110126875A1 (en) * 2009-12-01 2011-06-02 Hien-Minh Huu Le Conductive contact layer formed on a transparent conductive layer by a reactive sputter deposition
US20110232753A1 (en) * 2010-03-23 2011-09-29 Applied Materials, Inc. Methods of forming a thin-film solar energy device
US8384179B2 (en) * 2010-07-13 2013-02-26 University Of Electronic Science And Technology Of China Black silicon based metal-semiconductor-metal photodetector
US8604330B1 (en) 2010-12-06 2013-12-10 4Power, Llc High-efficiency solar-cell arrays with integrated devices and methods for forming them
CN103077982A (zh) * 2011-10-26 2013-05-01 上海空间电源研究所 非晶硅锗薄膜太阳电池
US9040340B2 (en) * 2011-11-14 2015-05-26 International Business Machines Corporation Temperature grading for band gap engineering of photovoltaic devices
US9568645B2 (en) 2013-09-30 2017-02-14 Novartis Ag Silicone hydrogel lenses with relatively-long thermal stability
EP3052534B1 (de) 2013-09-30 2019-05-01 Novartis AG Verfahren zur herstellung uv-licht-absorbierender brillengläser

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5694674A (en) * 1979-12-27 1981-07-31 Nec Corp Thin-film solar cell
JPS56150876A (en) * 1980-04-24 1981-11-21 Sanyo Electric Co Ltd Photovoltaic device
JPS5743477A (en) * 1980-04-24 1982-03-11 Sanyo Electric Co Ltd Photovoltaic device
JPS5867073A (ja) * 1981-10-19 1983-04-21 Agency Of Ind Science & Technol 太陽電池
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device
US4471155A (en) * 1983-04-15 1984-09-11 Energy Conversion Devices, Inc. Narrow band gap photovoltaic devices with enhanced open circuit voltage
US4542256A (en) * 1984-04-27 1985-09-17 University Of Delaware Graded affinity photovoltaic cell

Also Published As

Publication number Publication date
EP0213622B1 (de) 1992-04-15
JPS6249672A (ja) 1987-03-04
US4728370A (en) 1988-03-01
EP0213622A3 (en) 1989-03-15
EP0213622A2 (de) 1987-03-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BARZ, P., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 80803 MUENCHEN

8339 Ceased/non-payment of the annual fee