DE3678072D1 - Halbleitereinrichtung mit vorrichtungen zum regeln ihrer energieversorgung. - Google Patents

Halbleitereinrichtung mit vorrichtungen zum regeln ihrer energieversorgung.

Info

Publication number
DE3678072D1
DE3678072D1 DE8686401816T DE3678072T DE3678072D1 DE 3678072 D1 DE3678072 D1 DE 3678072D1 DE 8686401816 T DE8686401816 T DE 8686401816T DE 3678072 T DE3678072 T DE 3678072T DE 3678072 D1 DE3678072 D1 DE 3678072D1
Authority
DE
Germany
Prior art keywords
controlling
devices
semiconductor device
energy supply
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686401816T
Other languages
English (en)
Inventor
Keizo Aoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3678072D1 publication Critical patent/DE3678072D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Amplification And Gain Control (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Dram (AREA)
DE8686401816T 1985-08-16 1986-08-14 Halbleitereinrichtung mit vorrichtungen zum regeln ihrer energieversorgung. Expired - Fee Related DE3678072D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60179444A JP2592234B2 (ja) 1985-08-16 1985-08-16 半導体装置

Publications (1)

Publication Number Publication Date
DE3678072D1 true DE3678072D1 (de) 1991-04-18

Family

ID=16065965

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686401816T Expired - Fee Related DE3678072D1 (de) 1985-08-16 1986-08-14 Halbleitereinrichtung mit vorrichtungen zum regeln ihrer energieversorgung.

Country Status (5)

Country Link
US (1) US4716307A (de)
EP (1) EP0214899B1 (de)
JP (1) JP2592234B2 (de)
KR (1) KR900002473B1 (de)
DE (1) DE3678072D1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH083766B2 (ja) * 1986-05-31 1996-01-17 株式会社東芝 半導体集積回路の電源電圧降下回路
JP2883625B2 (ja) * 1989-03-30 1999-04-19 株式会社東芝 Ｍｏｓ型充電回路
US5051630A (en) * 1990-03-12 1991-09-24 Tektronix, Inc. Accurate delay generator having a compensation feature for power supply voltage and semiconductor process variations
JP2585450B2 (ja) * 1990-04-18 1997-02-26 東芝マイクロエレクトロニクス株式会社 半導体回路装置
US5063304A (en) * 1990-04-27 1991-11-05 Texas Instruments Incorporated Integrated circuit with improved on-chip power supply control
JP2778199B2 (ja) * 1990-04-27 1998-07-23 日本電気株式会社 内部降圧回路
KR930009148B1 (ko) * 1990-09-29 1993-09-23 삼성전자 주식회사 전원전압 조정회로
KR920010633A (ko) * 1990-11-30 1992-06-26 김광호 반도체 메모리 장치의 기준전압 발생회로
US5162668A (en) * 1990-12-14 1992-11-10 International Business Machines Corporation Small dropout on-chip voltage regulators with boosted power supply
KR940003406B1 (ko) * 1991-06-12 1994-04-21 삼성전자 주식회사 내부 전원전압 발생회로
DE4137730C2 (de) * 1991-11-15 1993-10-21 Texas Instruments Deutschland In einer Halbleiterschaltung integrierte Schaltungsanordnung
US5283482A (en) * 1992-07-06 1994-02-01 Ncr Corporation CMOS circuit for receiving ECL signals
CA2100727C (en) * 1993-07-16 2001-06-12 Jonathan Orchard-Webb Optimization circuit
JP2838761B2 (ja) * 1993-08-11 1998-12-16 セイコープレシジョン株式会社 カメラ用制御回路
JPH07229932A (ja) * 1994-02-17 1995-08-29 Toshiba Corp 電位検知回路
JP3072880B2 (ja) * 1994-06-02 2000-08-07 株式会社アドバンテスト Ｉｃ試験用電圧発生回路
US5640122A (en) * 1994-12-16 1997-06-17 Sgs-Thomson Microelectronics, Inc. Circuit for providing a bias voltage compensated for p-channel transistor variations
JP3195256B2 (ja) * 1996-10-24 2001-08-06 株式会社東芝 半導体集積回路
US5892409A (en) * 1997-07-28 1999-04-06 International Business Machines Corporation CMOS process compensation circuit
US6297671B1 (en) * 1998-09-01 2001-10-02 Texas Instruments Incorporated Level detection by voltage addition/subtraction
US6184668B1 (en) * 1999-06-22 2001-02-06 Isao Nojima Voltage sensing circuit and method for preventing a low-voltage from being inadvertently sensed as a high-voltage during power-up or power-down
JP4128763B2 (ja) * 2000-10-30 2008-07-30 株式会社東芝 電圧切り替え回路
KR100550637B1 (ko) * 2000-12-30 2006-02-10 주식회사 하이닉스반도체 저전압 감지기를 내장한 고전압 검출기
US20020149400A1 (en) * 2001-04-16 2002-10-17 Namik Kocaman Low voltage differential to single-ended converter
DE60219309T2 (de) * 2002-08-30 2008-01-03 Infineon Technologies Ag Halbleiterbaustein zum Einstellen einer durch Kurzkanaleffekte verursachten Schwellspannungsverschiebung
US6933769B2 (en) * 2003-08-26 2005-08-23 Micron Technology, Inc. Bandgap reference circuit
US6940337B2 (en) * 2003-12-29 2005-09-06 Texas Instruments Incorporated Load sensing voltage regulator for PLL/DLL architectures
JP2005242570A (ja) * 2004-02-25 2005-09-08 Matsushita Electric Ind Co Ltd 半導体集積回路
FR2908555B1 (fr) * 2006-11-14 2008-12-26 Commissariat Energie Atomique Circuit integre avec mode de veille minimisant la consommation de courant

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5318390A (en) * 1976-08-03 1978-02-20 Toshiba Corp Mos type field effect transistor circuit
DE2826624C2 (de) * 1978-06-19 1982-11-04 Deutsche Itt Industries Gmbh, 7800 Freiburg Integrierte IGFET-Konstantstromquelle
JPS5824874B2 (ja) * 1979-02-07 1983-05-24 富士通株式会社 センス回路
US4346343A (en) * 1980-05-16 1982-08-24 International Business Machines Corporation Power control means for eliminating circuit to circuit delay differences and providing a desired circuit delay
US4482985A (en) * 1981-04-17 1984-11-13 Hitachi, Ltd. Semiconductor integrated circuit
US4430582A (en) * 1981-11-16 1984-02-07 National Semiconductor Corporation Fast CMOS buffer for TTL input levels
JPS58119228A (ja) * 1982-01-11 1983-07-15 Nippon Telegr & Teleph Corp <Ntt> 半導体集積回路
US4477737A (en) * 1982-07-14 1984-10-16 Motorola, Inc. Voltage generator circuit having compensation for process and temperature variation
US4585955B1 (en) * 1982-12-15 2000-11-21 Tokyo Shibaura Electric Co Internally regulated power voltage circuit for mis semiconductor integrated circuit
US4532467A (en) * 1983-03-14 1985-07-30 Vitafin N.V. CMOS Circuits with parameter adapted voltage regulator
JPS59197165A (ja) * 1983-04-22 1984-11-08 Hitachi Ltd 半導体集積回路装置
US4555642A (en) * 1983-09-22 1985-11-26 Standard Microsystems Corporation Low power CMOS input buffer circuit

Also Published As

Publication number Publication date
KR900002473B1 (ko) 1990-04-16
JP2592234B2 (ja) 1997-03-19
EP0214899B1 (de) 1991-03-13
KR870002650A (ko) 1987-04-06
JPS6240756A (ja) 1987-02-21
EP0214899A1 (de) 1987-03-18
US4716307A (en) 1987-12-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee