DE3638644A1 - Substratpotentialerzeugungseinrichtung - Google Patents
SubstratpotentialerzeugungseinrichtungInfo
- Publication number
- DE3638644A1 DE3638644A1 DE19863638644 DE3638644A DE3638644A1 DE 3638644 A1 DE3638644 A1 DE 3638644A1 DE 19863638644 DE19863638644 DE 19863638644 DE 3638644 A DE3638644 A DE 3638644A DE 3638644 A1 DE3638644 A1 DE 3638644A1
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- substrate
- zone
- semiconductor
- mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000000758 substrate Substances 0.000 claims abstract description 106
- 239000004065 semiconductor Substances 0.000 claims abstract description 71
- 230000003071 parasitic effect Effects 0.000 claims abstract description 18
- 230000008878 coupling Effects 0.000 claims abstract description 14
- 238000010168 coupling process Methods 0.000 claims abstract description 14
- 238000005859 coupling reaction Methods 0.000 claims abstract description 14
- 239000003990 capacitor Substances 0.000 claims description 27
- 230000007704 transition Effects 0.000 claims description 19
- 230000015654 memory Effects 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 239000000969 carrier Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 230000007257 malfunction Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
- H01L27/0222—Charge pumping, substrate bias generation structures
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/205—Substrate bias-voltage generators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60296960A JPS62155547A (ja) | 1985-12-27 | 1985-12-27 | 基板電位発生装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3638644A1 true DE3638644A1 (de) | 1987-07-02 |
Family
ID=17840418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19863638644 Ceased DE3638644A1 (de) | 1985-12-27 | 1986-11-12 | Substratpotentialerzeugungseinrichtung |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS62155547A (ko) |
KR (1) | KR900002691B1 (ko) |
DE (1) | DE3638644A1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100398043B1 (ko) * | 1996-12-28 | 2004-05-17 | 주식회사 하이닉스반도체 | 반도체 소자의 모스 캐패시터 제조방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0023782A2 (en) * | 1979-07-26 | 1981-02-11 | Fujitsu Limited | Semiconductor device comprising EAROM cells |
EP0014310B1 (en) * | 1979-01-05 | 1982-12-29 | Mitsubishi Denki Kabushiki Kaisha | Substrate bias generator |
US4559548A (en) * | 1981-04-07 | 1985-12-17 | Tokyo Shibaura Denki Kabushiki Kaisha | CMOS Charge pump free of parasitic injection |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5839884B2 (ja) * | 1975-10-07 | 1983-09-02 | 新日本製鐵株式会社 | アルカリキンゾクカゴウブツオモチイル ヨウユウテツゴウキン ノ レンゾクテキセイレンホウホウ |
JPS57166067A (en) * | 1981-04-07 | 1982-10-13 | Toshiba Corp | Bias generating unit for substrate |
-
1985
- 1985-12-27 JP JP60296960A patent/JPS62155547A/ja active Pending
-
1986
- 1986-11-12 DE DE19863638644 patent/DE3638644A1/de not_active Ceased
- 1986-12-24 KR KR1019860011232A patent/KR900002691B1/ko not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0014310B1 (en) * | 1979-01-05 | 1982-12-29 | Mitsubishi Denki Kabushiki Kaisha | Substrate bias generator |
EP0023782A2 (en) * | 1979-07-26 | 1981-02-11 | Fujitsu Limited | Semiconductor device comprising EAROM cells |
US4559548A (en) * | 1981-04-07 | 1985-12-17 | Tokyo Shibaura Denki Kabushiki Kaisha | CMOS Charge pump free of parasitic injection |
Also Published As
Publication number | Publication date |
---|---|
KR870006639A (ko) | 1987-07-13 |
JPS62155547A (ja) | 1987-07-10 |
KR900002691B1 (ko) | 1990-04-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8131 | Rejection |