DE3634147A1 - Lithographischer maskenaufbau und lithographisches verfahren - Google Patents
Lithographischer maskenaufbau und lithographisches verfahrenInfo
- Publication number
- DE3634147A1 DE3634147A1 DE19863634147 DE3634147A DE3634147A1 DE 3634147 A1 DE3634147 A1 DE 3634147A1 DE 19863634147 DE19863634147 DE 19863634147 DE 3634147 A DE3634147 A DE 3634147A DE 3634147 A1 DE3634147 A1 DE 3634147A1
- Authority
- DE
- Germany
- Prior art keywords
- structure according
- lithographic
- mask
- mask structure
- lithographic mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 18
- 239000000463 material Substances 0.000 claims description 165
- 239000010408 film Substances 0.000 claims description 109
- 230000005855 radiation Effects 0.000 claims description 81
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 16
- 239000011147 inorganic material Substances 0.000 claims description 14
- 229910010272 inorganic material Inorganic materials 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 239000011368 organic material Substances 0.000 claims description 10
- 229920001721 polyimide Polymers 0.000 claims description 8
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000010419 fine particle Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 239000007850 fluorescent dye Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 34
- 230000035945 sensitivity Effects 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000001015 X-ray lithography Methods 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 9
- -1 polyparaxylylene Polymers 0.000 description 9
- 238000001459 lithography Methods 0.000 description 8
- 238000010276 construction Methods 0.000 description 7
- 230000000873 masking effect Effects 0.000 description 7
- 229920000052 poly(p-xylylene) Polymers 0.000 description 6
- 229910016066 BaSi Inorganic materials 0.000 description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 210000001072 colon Anatomy 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 235000019698 starch Nutrition 0.000 description 2
- 239000008107 starch Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000011882 ultra-fine particle Substances 0.000 description 2
- WQMWHMMJVJNCAL-UHFFFAOYSA-N 2,4-dimethylpenta-1,4-dien-3-one Chemical compound CC(=C)C(=O)C(C)=C WQMWHMMJVJNCAL-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910018565 CuAl Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- 229910017639 MgSi Inorganic materials 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/7035—Proximity or contact printers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70375—Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22197285A JPH0646623B2 (ja) | 1985-10-07 | 1985-10-07 | リソグラフイ用マスク構造体 |
| JP61196499A JPS6353922A (ja) | 1986-08-23 | 1986-08-23 | リソグラフイ−法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3634147A1 true DE3634147A1 (de) | 1987-04-16 |
| DE3634147C2 DE3634147C2 (en, 2012) | 1987-07-16 |
Family
ID=26509774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19863634147 Granted DE3634147A1 (de) | 1985-10-07 | 1986-10-07 | Lithographischer maskenaufbau und lithographisches verfahren |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4735877A (en, 2012) |
| DE (1) | DE3634147A1 (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006002859A3 (de) * | 2004-07-01 | 2006-06-22 | Zeiss Carl Smt Ag | Beleuchtungsquelle, wellenfrontvermessungsvorrichtung und mikrolithografie-projektionsbelichtungsanlage |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0361516B1 (en) * | 1988-09-30 | 1996-05-01 | Canon Kabushiki Kaisha | Method of making X-ray mask structure |
| JPH02202011A (ja) * | 1989-01-31 | 1990-08-10 | Yamaha Corp | Ｘ線リソグラフィー用マスク材 |
| US5196283A (en) * | 1989-03-09 | 1993-03-23 | Canon Kabushiki Kaisha | X-ray mask structure, and x-ray exposure process |
| US5266345A (en) * | 1989-12-14 | 1993-11-30 | Microgold, Inc. | Method of making a microwaveable bakery product |
| JPH04332115A (ja) * | 1991-05-02 | 1992-11-19 | Shin Etsu Chem Co Ltd | Ｘ線リソグラフィ−マスク用ｘ線透過膜 |
| ATE184711T1 (de) * | 1991-11-15 | 1999-10-15 | Canon Kk | Röntgenstrahlmaskenstruktur und - belichtungsverfahren sowie damit hergestelltes halbleiterbauelement und herstellungsverfahren für die röntgenstrahlmaskenstruktur |
| DE4200235C1 (en, 2012) * | 1992-01-08 | 1993-05-06 | Hoffmeister, Helmut, Dr., 4400 Muenster, De | |
| US5327475A (en) * | 1992-08-18 | 1994-07-05 | Ruxam, Inc. | Soft x-ray submicron lithography using multiply charged ions |
| WO1995034901A1 (en) * | 1992-08-18 | 1995-12-21 | Ruxam, Inc. | Soft x-ray submicron lithography using multiply charged ions |
| WO1994007179A1 (en) * | 1992-09-22 | 1994-03-31 | Knirck Jeffrey G | Method and apparatus for the photolithographic exposure of excess photoresist on a substrate |
| EP0627666B1 (en) * | 1993-05-24 | 2003-02-05 | Holtronic Technologies Plc | Apparatus and method for changing the scale of a printed pattern |
| JP3513236B2 (ja) * | 1993-11-19 | 2004-03-31 | キヤノン株式会社 | Ｘ線マスク構造体、ｘ線マスク構造体の製造方法、該ｘ線マスク構造体を用いたｘ線露光装置及びｘ線露光方法、並びに該ｘ線露光方法を用いて製造される半導体装置 |
| US5466947A (en) * | 1994-03-18 | 1995-11-14 | Bio-Rad Laboratories, Inc. | Protective overlayer for phosphor imaging screen |
| JPH08262699A (ja) * | 1995-03-28 | 1996-10-11 | Canon Inc | レジスト組成物、レジスト処理方法及び装置 |
| JP3267471B2 (ja) * | 1995-08-02 | 2002-03-18 | キヤノン株式会社 | マスク、これを用いた露光装置やデバイス生産方法 |
| JPH0992602A (ja) * | 1995-09-26 | 1997-04-04 | Canon Inc | マスク構造体及びその製造方法 |
| JPH09244253A (ja) * | 1996-03-05 | 1997-09-19 | Nitto Boseki Co Ltd | パターン形成方法 |
| JPH09306807A (ja) * | 1996-05-14 | 1997-11-28 | Canon Inc | Ｘ線露光用マスク構造体の製造方法 |
| US6017630A (en) * | 1996-05-22 | 2000-01-25 | Research Development Corporation | Ultrafine particle and production method thereof, production method of ultrafine particle bonded body, and fullerene and production method thereof |
| US5809103A (en) * | 1996-12-20 | 1998-09-15 | Massachusetts Institute Of Technology | X-ray lithography masking |
| JP4011687B2 (ja) | 1997-10-01 | 2007-11-21 | キヤノン株式会社 | マスク構造体、該マスク構造体を用いた露光装置、該マスク構造体を用いた半導体デバイス製造方法 |
| DE19808461A1 (de) * | 1998-03-02 | 1999-09-09 | Zeiss Carl Fa | Retikel mit Kristall-Trägermaterial |
| US6472671B1 (en) * | 2000-02-09 | 2002-10-29 | Jean I. Montagu | Quantified fluorescence microscopy |
| JP2000012428A (ja) | 1998-06-19 | 2000-01-14 | Canon Inc | Ｘ線マスク構造体、該ｘ線マスク構造体を用いたｘ線露光方法、前記ｘ線マスク構造体を用いたｘ線露光装置、前記ｘ線マスク構造体を用いた半導体デバイスの製造方法、および該製造方法によって製造された半導体デバイス |
| JP2000286187A (ja) | 1999-03-31 | 2000-10-13 | Canon Inc | 露光装置、該露光装置に用いるマスク構造体、露光方法、前記露光装置を用いて作製された半導体デバイス、および半導体デバイス製造方法 |
| US6733815B2 (en) * | 1999-04-16 | 2004-05-11 | Cargill, Incorporated | Food ingredient containing wheat gluten, soy grits and soy flour |
| JP3619118B2 (ja) | 2000-05-01 | 2005-02-09 | キヤノン株式会社 | 露光用反射型マスクとその製造方法、並びに露光装置とデバイス製造方法 |
| US20040022916A1 (en) * | 2000-12-22 | 2004-02-05 | Atwell William Alan | Particulate-based ingredient delivery system |
| DE102004018250A1 (de) * | 2004-04-15 | 2005-11-03 | Infineon Technologies Ag | Wafer-Stabilisierungsvorrichtung und Verfahren zu dessen Herstellung |
| US8374818B2 (en) * | 2008-12-19 | 2013-02-12 | Affymetrix, Inc. | System, method and apparatus for calibrating inspection tools |
| KR102715222B1 (ko) * | 2016-02-19 | 2024-10-11 | 에어 워터 가부시키가이샤 | 화합물 반도체 기판, 펠리클막, 및 화합물 반도체 기판의 제조 방법 |
| WO2017141835A1 (ja) * | 2016-02-19 | 2017-08-24 | エア・ウォーター株式会社 | 化合物半導体基板、ペリクル膜、および化合物半導体基板の製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3778615A (en) * | 1969-10-21 | 1973-12-11 | Eastman Kodak Co | Mixed alkaline earth sulfate phosphor fluorescent screens and radiographic elements |
| BE757817A (fr) * | 1969-10-21 | 1971-04-01 | Eastman Kodak Co | Composition fluorescente a base de sulfates mixtes de metaux alcalino-terreux, sa preparation et ses applications, notamment a la radiographi |
| US4677042A (en) * | 1984-11-05 | 1987-06-30 | Canon Kabushiki Kaisha | Mask structure for lithography, method for preparation thereof and lithographic method |
-
1986
- 1986-10-06 US US06/915,376 patent/US4735877A/en not_active Expired - Lifetime
- 1986-10-07 DE DE19863634147 patent/DE3634147A1/de active Granted
Non-Patent Citations (1)
| Title |
|---|
| NICHTS-ERMITTELT * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006002859A3 (de) * | 2004-07-01 | 2006-06-22 | Zeiss Carl Smt Ag | Beleuchtungsquelle, wellenfrontvermessungsvorrichtung und mikrolithografie-projektionsbelichtungsanlage |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3634147C2 (en, 2012) | 1987-07-16 |
| US4735877A (en) | 1988-04-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |