DE3634130A1 - Vorrichtung und verfahren fuer die chemische dampfabscheidung - Google Patents

Vorrichtung und verfahren fuer die chemische dampfabscheidung

Info

Publication number
DE3634130A1
DE3634130A1 DE19863634130 DE3634130A DE3634130A1 DE 3634130 A1 DE3634130 A1 DE 3634130A1 DE 19863634130 DE19863634130 DE 19863634130 DE 3634130 A DE3634130 A DE 3634130A DE 3634130 A1 DE3634130 A1 DE 3634130A1
Authority
DE
Germany
Prior art keywords
substrate
gas
gas flow
deposition
flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19863634130
Other languages
German (de)
English (en)
Inventor
Wiebe B De Boer
Klavs F Jensen
Wayne L Johnson
Gary W Read
Mcdonald Robinson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epsilon LP
Original Assignee
Epsilon LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epsilon LP filed Critical Epsilon LP
Publication of DE3634130A1 publication Critical patent/DE3634130A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE19863634130 1985-10-07 1986-10-07 Vorrichtung und verfahren fuer die chemische dampfabscheidung Withdrawn DE3634130A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78473885A 1985-10-07 1985-10-07

Publications (1)

Publication Number Publication Date
DE3634130A1 true DE3634130A1 (de) 1987-05-07

Family

ID=25133380

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863634130 Withdrawn DE3634130A1 (de) 1985-10-07 1986-10-07 Vorrichtung und verfahren fuer die chemische dampfabscheidung

Country Status (4)

Country Link
JP (1) JPH07100861B2 (nl)
DE (1) DE3634130A1 (nl)
GB (1) GB2181460B (nl)
NL (1) NL8602357A (nl)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8620273D0 (en) * 1986-08-20 1986-10-01 Gen Electric Co Plc Deposition of thin films
US5755886A (en) * 1986-12-19 1998-05-26 Applied Materials, Inc. Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US4997677A (en) * 1987-08-31 1991-03-05 Massachusetts Institute Of Technology Vapor phase reactor for making multilayer structures
GB2220679A (en) * 1987-09-09 1990-01-17 Edward William Johnson Apparatus for thin film deposition of aerosol particles by thermolytic decomposition
IT1231547B (it) * 1989-08-31 1991-12-17 Lpe Spa Sistema per controllare velocita' di crescita epitassiale in reattori verticali muniti di suscettore troncopiramidale
US5052339A (en) * 1990-10-16 1991-10-01 Air Products And Chemicals, Inc. Radio frequency plasma enhanced chemical vapor deposition process and reactor
US5370739A (en) * 1992-06-15 1994-12-06 Materials Research Corporation Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD
US5273588A (en) * 1992-06-15 1993-12-28 Materials Research Corporation Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means
CN1312326C (zh) * 2000-05-08 2007-04-25 Memc电子材料有限公司 消除自动掺杂和背面晕圈的外延硅晶片
US6444027B1 (en) 2000-05-08 2002-09-03 Memc Electronic Materials, Inc. Modified susceptor for use in chemical vapor deposition process
EP1287188B1 (en) * 2000-12-29 2007-03-14 MEMC Electronic Materials, Inc. Epitaxial silicon wafer free from autodoping and backside halo
AT513190B9 (de) * 2012-08-08 2014-05-15 Berndorf Hueck Band Und Pressblechtechnik Gmbh Vorrichtung und Verfahren zur Plasmabeschichtung eines Substrats, insbesondere eines Pressblechs

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1056430A (en) * 1962-11-13 1967-01-25 Texas Instruments Inc Epitaxial process and apparatus for semiconductors
DE1289833B (de) * 1964-12-29 1969-02-27 Siemens Ag Verfahren zum epitaktischen Abscheiden einer Halbleiterschicht
US3894164A (en) * 1973-03-15 1975-07-08 Rca Corp Chemical vapor deposition of luminescent films
US3874900A (en) * 1973-08-13 1975-04-01 Materials Technology Corp Article coated with titanium carbide and titanium nitride
US3854443A (en) * 1973-12-19 1974-12-17 Intel Corp Gas reactor for depositing thin films
JPS59207631A (ja) * 1983-05-11 1984-11-24 Semiconductor Res Found 光化学を用いたドライプロセス装置
US4574093A (en) * 1983-12-30 1986-03-04 At&T Bell Laboratories Deposition technique

Also Published As

Publication number Publication date
NL8602357A (nl) 1987-05-04
GB8623978D0 (en) 1986-11-12
JPH07100861B2 (ja) 1995-11-01
GB2181460A (en) 1987-04-23
JPS6289870A (ja) 1987-04-24
GB2181460B (en) 1989-10-04

Similar Documents

Publication Publication Date Title
DE2064470C3 (de) Vorrichtung zur Durchführung von Reaktionen an erhitzten Substratoberflächen mittels Gastransportprozessen
DE3786692T2 (de) Vorrichtung mit flachem Suszeptor, der parallel zu einer Referenzfläche um eine Achse lotrecht zu dieser Fläche rotiert.
DE3787689T2 (de) Verfahren zum Beschichten unter Anwendung einer CVD-Beschichtungstechnik.
DE3634130A1 (de) Vorrichtung und verfahren fuer die chemische dampfabscheidung
DE2110289C3 (de) Verfahren zum Niederschlagen von Halbleitermaterial und Vorrichtung zu seiner Durchführung
DE2732807C2 (de) Verfahren zur Herstellung eines Halbleiter-Bauelementes mit einer Einkristallstruktur
DE3815006A1 (de) Vorrichtung zum herstellen von beschichtungen mit abgestufter zusammensetzung
DE3634129A1 (de) Verfahren und reaktor zum chemischen aufdampfen
DE1178827B (de) Verfahren zur Herstellung von Halbleiterkoerpern fuer Halbleiterbauelemente durch pyrolytische Zersetzung einer Halbleiterverbindung
DE3635279A1 (de) Gasphasen-epitaxieverfahren fuer einen verbindungs-halbleiter-einkristall und einrichtung zur durchfuehrung des verfahrens
DE2140092A1 (de) Verfahren zum Aufbringen dunner Schichten auf Substrate sowie Vorrichtung zur Durchfuhrung des Verfahrens
DE3633386A1 (de) Verfahren und vorrichtung zum behandeln von substraten im vakuum
DE60112372T2 (de) Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung
DE1285465B (de) Verfahren zum epitaktischen Aufwachsen von Schichten aus Silicium oder Germanium
DE68906802T2 (de) Verfahren zur Bildung eines funktionellen aufgedampften Films aus Gruppe -III- und -V-Atomen als Hauptkomponentenatome durch chemisches Mikrowellen-Plasma-Aufdampfverfahren.
DE69116033T2 (de) Reaktor zur Behandlung von Halbleiterscheiben.
DE2827304A1 (de) Brenner
DE2931432A1 (de) Eindiffundieren von aluminium in einem offenen rohr
DE2508121C3 (de) Verfahren und Vorrichtung zum epitaktischen Abscheiden einer Verbindungshalbleiterschicht aus einer Lösungsschmelze auf einem Halbleiterplättchen
DE3889735T2 (de) Chemischer dampfniederschlagsreaktor und dessen verwendung.
DE69111540T2 (de) Vorrichtung zum Herstellen einer Schicht im Vacuum.
DE4142877A1 (de) Cvd-verfahren und vorrichtung zu dessen durchfuehrung
DE69405019T2 (de) Verfahren und Vorrichtung zur Herstellung dunner kristalliner Schichten für Festkörperlasern
EP1481117B1 (de) Verfahren und vorrichtung zum abscheiden von halbleiterschichten
DE2522921C3 (de) Verfahren zur epitaktischen Abscheidung dotierter III-V-Verbindungshalbleiter-Schichten

Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee