GB2181460B - Apparatus and method for chemical vapor deposition using an axially symmetric gas flow - Google Patents

Apparatus and method for chemical vapor deposition using an axially symmetric gas flow

Info

Publication number
GB2181460B
GB2181460B GB8623978A GB8623978A GB2181460B GB 2181460 B GB2181460 B GB 2181460B GB 8623978 A GB8623978 A GB 8623978A GB 8623978 A GB8623978 A GB 8623978A GB 2181460 B GB2181460 B GB 2181460B
Authority
GB
United Kingdom
Prior art keywords
gas flow
vapor deposition
chemical vapor
axially symmetric
symmetric gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8623978A
Other versions
GB8623978D0 (en
GB2181460A (en
Inventor
Wiebe B Deboer
Klavs F Jensen
Wayne L Johnson
Mcdonald Robinson
Gary W Read
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epsilon LP
Original Assignee
Epsilon LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epsilon LP filed Critical Epsilon LP
Publication of GB8623978D0 publication Critical patent/GB8623978D0/en
Publication of GB2181460A publication Critical patent/GB2181460A/en
Application granted granted Critical
Publication of GB2181460B publication Critical patent/GB2181460B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
GB8623978A 1985-10-07 1986-10-06 Apparatus and method for chemical vapor deposition using an axially symmetric gas flow Expired GB2181460B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78473885A 1985-10-07 1985-10-07

Publications (3)

Publication Number Publication Date
GB8623978D0 GB8623978D0 (en) 1986-11-12
GB2181460A GB2181460A (en) 1987-04-23
GB2181460B true GB2181460B (en) 1989-10-04

Family

ID=25133380

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8623978A Expired GB2181460B (en) 1985-10-07 1986-10-06 Apparatus and method for chemical vapor deposition using an axially symmetric gas flow

Country Status (4)

Country Link
JP (1) JPH07100861B2 (en)
DE (1) DE3634130A1 (en)
GB (1) GB2181460B (en)
NL (1) NL8602357A (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8620273D0 (en) * 1986-08-20 1986-10-01 Gen Electric Co Plc Deposition of thin films
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5871811A (en) * 1986-12-19 1999-02-16 Applied Materials, Inc. Method for protecting against deposition on a selected region of a substrate
US4997677A (en) * 1987-08-31 1991-03-05 Massachusetts Institute Of Technology Vapor phase reactor for making multilayer structures
GB2220679A (en) * 1987-09-09 1990-01-17 Edward William Johnson Apparatus for thin film deposition of aerosol particles by thermolytic decomposition
IT1231547B (en) * 1989-08-31 1991-12-17 Lpe Spa SYSTEM TO CONTROL EPITAXIAL GROWTH SPEED IN VERTICAL REACTORS EQUIPPED WITH TRUNCOPYRAMIDAL SUCCESSOR
US5052339A (en) * 1990-10-16 1991-10-01 Air Products And Chemicals, Inc. Radio frequency plasma enhanced chemical vapor deposition process and reactor
US5273588A (en) * 1992-06-15 1993-12-28 Materials Research Corporation Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means
US5370739A (en) * 1992-06-15 1994-12-06 Materials Research Corporation Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD
US6444027B1 (en) 2000-05-08 2002-09-03 Memc Electronic Materials, Inc. Modified susceptor for use in chemical vapor deposition process
CN1312326C (en) * 2000-05-08 2007-04-25 Memc电子材料有限公司 Epitaxial silicon wafer free from autodoping and backside halo
EP1287188B1 (en) * 2000-12-29 2007-03-14 MEMC Electronic Materials, Inc. Epitaxial silicon wafer free from autodoping and backside halo
AT513190B9 (en) * 2012-08-08 2014-05-15 Berndorf Hueck Band Und Pressblechtechnik Gmbh Apparatus and method for plasma coating a substrate, in particular a press plate

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1056430A (en) * 1962-11-13 1967-01-25 Texas Instruments Inc Epitaxial process and apparatus for semiconductors
GB1124329A (en) * 1964-12-29 1968-08-21 Siemens Ag Improvements in or relating to the epitaxial deposition of crystalline layers
US3874900A (en) * 1973-08-13 1975-04-01 Materials Technology Corp Article coated with titanium carbide and titanium nitride
US3894164A (en) * 1973-03-15 1975-07-08 Rca Corp Chemical vapor deposition of luminescent films
GB2141386A (en) * 1983-05-11 1984-12-19 Semiconductor Res Found Fabricating semiconductor devices
WO1985003088A1 (en) * 1983-12-30 1985-07-18 American Telephone & Telegraph Company Material vapor deposition technique

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3854443A (en) * 1973-12-19 1974-12-17 Intel Corp Gas reactor for depositing thin films

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1056430A (en) * 1962-11-13 1967-01-25 Texas Instruments Inc Epitaxial process and apparatus for semiconductors
GB1124329A (en) * 1964-12-29 1968-08-21 Siemens Ag Improvements in or relating to the epitaxial deposition of crystalline layers
US3894164A (en) * 1973-03-15 1975-07-08 Rca Corp Chemical vapor deposition of luminescent films
US3874900A (en) * 1973-08-13 1975-04-01 Materials Technology Corp Article coated with titanium carbide and titanium nitride
GB2141386A (en) * 1983-05-11 1984-12-19 Semiconductor Res Found Fabricating semiconductor devices
WO1985003088A1 (en) * 1983-12-30 1985-07-18 American Telephone & Telegraph Company Material vapor deposition technique

Also Published As

Publication number Publication date
GB8623978D0 (en) 1986-11-12
GB2181460A (en) 1987-04-23
JPH07100861B2 (en) 1995-11-01
DE3634130A1 (en) 1987-05-07
NL8602357A (en) 1987-05-04
JPS6289870A (en) 1987-04-24

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PE20 Patent expired after termination of 20 years

Effective date: 20061005