DE3633472A1 - Verfahren und vorrichtung zur herstellung ohmscher kontakte zwischen metallen und halbleitern - Google Patents
Verfahren und vorrichtung zur herstellung ohmscher kontakte zwischen metallen und halbleiternInfo
- Publication number
- DE3633472A1 DE3633472A1 DE19863633472 DE3633472A DE3633472A1 DE 3633472 A1 DE3633472 A1 DE 3633472A1 DE 19863633472 DE19863633472 DE 19863633472 DE 3633472 A DE3633472 A DE 3633472A DE 3633472 A1 DE3633472 A1 DE 3633472A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- semiconductor
- plasma etching
- semiconductor material
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 29
- 238000000034 method Methods 0.000 title claims description 26
- 229910052751 metal Inorganic materials 0.000 title claims description 15
- 239000002184 metal Substances 0.000 title claims description 15
- 150000002739 metals Chemical class 0.000 title description 2
- 235000012431 wafers Nutrition 0.000 claims description 32
- 238000001020 plasma etching Methods 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000003989 dielectric material Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010405 reoxidation reaction Methods 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT22325/85A IT1185964B (it) | 1985-10-01 | 1985-10-01 | Procedimento e relativa apparecchiatura per realizzare contatti metallo-semiconduttore di tipo ohmico |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3633472A1 true DE3633472A1 (de) | 1987-04-02 |
Family
ID=11194694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19863633472 Withdrawn DE3633472A1 (de) | 1985-10-01 | 1986-10-01 | Verfahren und vorrichtung zur herstellung ohmscher kontakte zwischen metallen und halbleitern |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS6286716A (it) |
| DE (1) | DE3633472A1 (it) |
| FR (1) | FR2588120A1 (it) |
| GB (1) | GB2181297B (it) |
| IT (1) | IT1185964B (it) |
| NL (1) | NL8602453A (it) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4339465A1 (de) * | 1993-11-19 | 1995-05-24 | Gold Star Electronics | Verfahren zur Behandlung der Oberfläche eines Siliciumsubstrats |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5043299B1 (en) * | 1989-12-01 | 1997-02-25 | Applied Materials Inc | Process for selective deposition of tungsten on semiconductor wafer |
| US5478780A (en) * | 1990-03-30 | 1995-12-26 | Siemens Aktiengesellschaft | Method and apparatus for producing conductive layers or structures for VLSI circuits |
| EP0448763A1 (de) * | 1990-03-30 | 1991-10-02 | Siemens Aktiengesellschaft | Verfahren und Vorrichtung zur Herstellung von leitenden Schichten oder Strukturen für höchstintegrierte Schaltungen |
| DE69121451T2 (de) * | 1990-04-16 | 1997-02-20 | Applied Materials Inc | Verfahren zum Herstellen einer Titansilizidschicht auf einer Halbleiterschicht |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1177382A (en) * | 1966-02-24 | 1970-01-14 | Rca Corp Formerly Known As Rad | Method of Making Ohmic Contact to a Semiconductor Body |
| BE758321A (fr) * | 1969-11-03 | 1971-04-01 | Rca Corp | Procede de metallisation de dispositifs a semi-conducteurs |
| CA965189A (en) * | 1972-01-03 | 1975-03-25 | Signetics Corporation | Semiconductor structure using platinel silicide as a schottky barrier diode and method |
| US4056642A (en) * | 1976-05-14 | 1977-11-01 | Data General Corporation | Method of fabricating metal-semiconductor interfaces |
| US4107835A (en) * | 1977-02-11 | 1978-08-22 | Bell Telephone Laboratories, Incorporated | Fabrication of semiconductive devices |
| DE3103615A1 (de) * | 1981-02-03 | 1982-09-09 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur erzeugung von extremen feinstrukturen |
| JPS57157525A (en) * | 1981-03-23 | 1982-09-29 | Fujitsu Ltd | Surface treating method |
| JPS6077429A (ja) * | 1983-10-04 | 1985-05-02 | Asahi Glass Co Ltd | ドライエツチング方法 |
| US4693777A (en) * | 1984-11-30 | 1987-09-15 | Kabushiki Kaisha Toshiba | Apparatus for producing semiconductor devices |
| US4824518A (en) * | 1985-03-29 | 1989-04-25 | Sharp Kabushiki Kaisha | Method for the production of semiconductor devices |
| US4605479A (en) * | 1985-06-24 | 1986-08-12 | Rca Corporation | In-situ cleaned ohmic contacts |
-
1985
- 1985-10-01 IT IT22325/85A patent/IT1185964B/it active
-
1986
- 1986-08-19 GB GB8620131A patent/GB2181297B/en not_active Expired
- 1986-09-29 NL NL8602453A patent/NL8602453A/nl not_active Application Discontinuation
- 1986-09-30 JP JP61234265A patent/JPS6286716A/ja active Pending
- 1986-09-30 FR FR8613608A patent/FR2588120A1/fr not_active Withdrawn
- 1986-10-01 DE DE19863633472 patent/DE3633472A1/de not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4339465A1 (de) * | 1993-11-19 | 1995-05-24 | Gold Star Electronics | Verfahren zur Behandlung der Oberfläche eines Siliciumsubstrats |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2181297A (en) | 1987-04-15 |
| NL8602453A (nl) | 1987-05-04 |
| IT8522325A0 (it) | 1985-10-01 |
| IT1185964B (it) | 1987-11-18 |
| FR2588120A1 (fr) | 1987-04-03 |
| GB8620131D0 (en) | 1986-10-01 |
| GB2181297B (en) | 1989-06-07 |
| JPS6286716A (ja) | 1987-04-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8130 | Withdrawal |