DE3631136C2 - - Google Patents

Info

Publication number
DE3631136C2
DE3631136C2 DE3631136A DE3631136A DE3631136C2 DE 3631136 C2 DE3631136 C2 DE 3631136C2 DE 3631136 A DE3631136 A DE 3631136A DE 3631136 A DE3631136 A DE 3631136A DE 3631136 C2 DE3631136 C2 DE 3631136C2
Authority
DE
Germany
Prior art keywords
zone
heavily doped
outer zone
doped
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3631136A
Other languages
German (de)
English (en)
Other versions
DE3631136A1 (de
Inventor
Peter Dr.-Ing. 8000 Muenchen De Voss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19863631136 priority Critical patent/DE3631136A1/de
Publication of DE3631136A1 publication Critical patent/DE3631136A1/de
Application granted granted Critical
Publication of DE3631136C2 publication Critical patent/DE3631136C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

Landscapes

  • Rectifiers (AREA)
DE19863631136 1986-09-12 1986-09-12 Diode mit weichem abrissverhalten Granted DE3631136A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19863631136 DE3631136A1 (de) 1986-09-12 1986-09-12 Diode mit weichem abrissverhalten

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19863631136 DE3631136A1 (de) 1986-09-12 1986-09-12 Diode mit weichem abrissverhalten

Publications (2)

Publication Number Publication Date
DE3631136A1 DE3631136A1 (de) 1988-03-24
DE3631136C2 true DE3631136C2 (enrdf_load_stackoverflow) 1992-09-17

Family

ID=6309477

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863631136 Granted DE3631136A1 (de) 1986-09-12 1986-09-12 Diode mit weichem abrissverhalten

Country Status (1)

Country Link
DE (1) DE3631136A1 (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4438896A1 (de) * 1994-10-31 1996-05-02 Abb Management Ag Halbleiterdiode mit Elektronenspender
DE19843893A1 (de) * 1998-09-24 2000-04-06 Siemens Ag Leistungshalbleiterdiode

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3823795A1 (de) * 1988-07-14 1990-01-18 Semikron Elektronik Gmbh Schnelle leistungsdiode
DE3832748A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterdiode
DE3832732A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterdiode
DE3939324A1 (de) * 1989-11-28 1991-05-29 Eupec Gmbh & Co Kg Leistungs-halbleiterbauelement mit emitterkurzschluessen
DE3942967A1 (de) * 1989-12-23 1991-06-27 Semikron Elektronik Gmbh Schnelle leistungsdiode
DE4135258C2 (de) * 1991-10-25 1996-05-02 Semikron Elektronik Gmbh Schnelle Leistungsdiode
DE4137840A1 (de) * 1991-11-16 1993-06-03 Asea Brown Boveri Halbleiterschalter zum sperren hoher spannungen
DE4201183A1 (de) * 1992-01-17 1993-07-22 Eupec Gmbh & Co Kg Leistungsdiode
DE4305040C2 (de) * 1993-02-18 1999-07-22 Eupec Gmbh & Co Kg Freilaufdiode für einen GTO-Thyristor
DE102004044141A1 (de) 2004-09-13 2006-03-30 Robert Bosch Gmbh Halbleiteranordnung zur Spannungsbegrenzung
EP2073274A1 (en) 2007-12-19 2009-06-24 ABB Technology AG Diode
US8466491B2 (en) 2011-05-12 2013-06-18 Infineon Technologies Austria Ag Semiconductor component with improved softness
US9324783B2 (en) 2014-09-30 2016-04-26 Infineon Technologies Ag Soft switching semiconductor device and method for producing thereof
JP7641909B2 (ja) 2019-04-02 2025-03-07 ヒタチ・エナジー・リミテッド 逆回復が改善されたセグメント構造パワーダイオード

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2506102C3 (de) * 1975-02-13 1982-03-25 Siemens AG, 1000 Berlin und 8000 München Halbleitergleichrichter
JPS5860577A (ja) * 1981-10-07 1983-04-11 Hitachi Ltd 半導体装置
US4641174A (en) * 1983-08-08 1987-02-03 General Electric Company Pinch rectifier
GB2151844A (en) * 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices
DE3435464A1 (de) * 1984-09-27 1986-04-10 Robert Bosch Gmbh, 7000 Stuttgart Gleichrichterdiode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4438896A1 (de) * 1994-10-31 1996-05-02 Abb Management Ag Halbleiterdiode mit Elektronenspender
US5619047A (en) * 1994-10-31 1997-04-08 Asea Brown Boveri Ag Semiconductor diode in which electrons are injected into a reverse current
DE19843893A1 (de) * 1998-09-24 2000-04-06 Siemens Ag Leistungshalbleiterdiode

Also Published As

Publication number Publication date
DE3631136A1 (de) 1988-03-24

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition