DE3631136A1 - Diode mit weichem abrissverhalten - Google Patents
Diode mit weichem abrissverhaltenInfo
- Publication number
- DE3631136A1 DE3631136A1 DE19863631136 DE3631136A DE3631136A1 DE 3631136 A1 DE3631136 A1 DE 3631136A1 DE 19863631136 DE19863631136 DE 19863631136 DE 3631136 A DE3631136 A DE 3631136A DE 3631136 A1 DE3631136 A1 DE 3631136A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- current
- diode
- outer zone
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 28
- 239000002019 doping agent Substances 0.000 claims description 11
- 230000000903 blocking effect Effects 0.000 claims description 2
- 239000002800 charge carrier Substances 0.000 abstract description 9
- 230000001419 dependent effect Effects 0.000 abstract description 6
- 230000006378 damage Effects 0.000 abstract description 5
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 230000005611 electricity Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
Landscapes
- Rectifiers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19863631136 DE3631136A1 (de) | 1986-09-12 | 1986-09-12 | Diode mit weichem abrissverhalten |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19863631136 DE3631136A1 (de) | 1986-09-12 | 1986-09-12 | Diode mit weichem abrissverhalten |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3631136A1 true DE3631136A1 (de) | 1988-03-24 |
| DE3631136C2 DE3631136C2 (enrdf_load_stackoverflow) | 1992-09-17 |
Family
ID=6309477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19863631136 Granted DE3631136A1 (de) | 1986-09-12 | 1986-09-12 | Diode mit weichem abrissverhalten |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3631136A1 (enrdf_load_stackoverflow) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3823795A1 (de) * | 1988-07-14 | 1990-01-18 | Semikron Elektronik Gmbh | Schnelle leistungsdiode |
| DE3832748A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Leistungshalbleiterdiode |
| DE3832732A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Leistungshalbleiterdiode |
| DE3942967A1 (de) * | 1989-12-23 | 1991-06-27 | Semikron Elektronik Gmbh | Schnelle leistungsdiode |
| EP0430133A3 (en) * | 1989-11-28 | 1991-09-11 | Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh & Co. Kg | Power semiconductor device having emitter shorts |
| DE4135258A1 (de) * | 1991-10-25 | 1993-04-29 | Semikron Elektronik Gmbh | Schnelle leistungsdiode |
| DE4137840A1 (de) * | 1991-11-16 | 1993-06-03 | Asea Brown Boveri | Halbleiterschalter zum sperren hoher spannungen |
| DE4201183A1 (de) * | 1992-01-17 | 1993-07-22 | Eupec Gmbh & Co Kg | Leistungsdiode |
| DE4305040A1 (de) * | 1993-02-18 | 1994-08-25 | Eupec Gmbh & Co Kg | Freilaufdiode für einen GTO-Thyristor |
| WO2006029921A1 (de) * | 2004-09-13 | 2006-03-23 | Robert Bosch Gmbh | Halbleiteranordnung zur spannungsbegrenzung |
| EP2073274A1 (en) | 2007-12-19 | 2009-06-24 | ABB Technology AG | Diode |
| US8466491B2 (en) | 2011-05-12 | 2013-06-18 | Infineon Technologies Austria Ag | Semiconductor component with improved softness |
| US9324783B2 (en) | 2014-09-30 | 2016-04-26 | Infineon Technologies Ag | Soft switching semiconductor device and method for producing thereof |
| WO2020201361A1 (en) | 2019-04-02 | 2020-10-08 | Abb Power Grids Switzerland Ag | Segmented power diode structure with improved reverse recovery |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4438896A1 (de) * | 1994-10-31 | 1996-05-02 | Abb Management Ag | Halbleiterdiode mit Elektronenspender |
| DE19843893A1 (de) * | 1998-09-24 | 2000-04-06 | Siemens Ag | Leistungshalbleiterdiode |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2506102A1 (de) * | 1975-02-13 | 1976-08-26 | Siemens Ag | Halbleitergleichrichter |
| EP0134456A2 (en) * | 1983-08-08 | 1985-03-20 | General Electric Company | Pinch rectifier |
| DE3435464A1 (de) * | 1984-09-27 | 1986-04-10 | Robert Bosch Gmbh, 7000 Stuttgart | Gleichrichterdiode |
| EP0147893B1 (en) * | 1983-12-20 | 1987-05-20 | Philips Electronics Uk Limited | Semiconductor devices |
| EP0077004B1 (en) * | 1981-10-07 | 1990-02-07 | Hitachi, Ltd. | Semiconductor rectifier diode |
-
1986
- 1986-09-12 DE DE19863631136 patent/DE3631136A1/de active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2506102A1 (de) * | 1975-02-13 | 1976-08-26 | Siemens Ag | Halbleitergleichrichter |
| EP0077004B1 (en) * | 1981-10-07 | 1990-02-07 | Hitachi, Ltd. | Semiconductor rectifier diode |
| EP0134456A2 (en) * | 1983-08-08 | 1985-03-20 | General Electric Company | Pinch rectifier |
| EP0147893B1 (en) * | 1983-12-20 | 1987-05-20 | Philips Electronics Uk Limited | Semiconductor devices |
| DE3435464A1 (de) * | 1984-09-27 | 1986-04-10 | Robert Bosch Gmbh, 7000 Stuttgart | Gleichrichterdiode |
Non-Patent Citations (1)
| Title |
|---|
| US-Z.: SHIMIZU, Y., et al.: High Speed Low-Loss p-n Diode Having a Channel Structure. In: IEEE Transactions on Electron Devices 1984, Vol. ED-31, No. 9, S. 1314-1319 * |
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0350816A3 (de) * | 1988-07-14 | 1990-12-27 | SEMIKRON Elektronik GmbH | Schnelle Leistungsdiode und Verfahren zu ihrer Herstellung |
| DE3823795A1 (de) * | 1988-07-14 | 1990-01-18 | Semikron Elektronik Gmbh | Schnelle leistungsdiode |
| DE3832748A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Leistungshalbleiterdiode |
| DE3832732A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Leistungshalbleiterdiode |
| EP0430133A3 (en) * | 1989-11-28 | 1991-09-11 | Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh & Co. Kg | Power semiconductor device having emitter shorts |
| US5142347A (en) * | 1989-11-28 | 1992-08-25 | Siemens Aktiengesellschaft | Power semiconductor component with emitter shorts |
| DE3942967A1 (de) * | 1989-12-23 | 1991-06-27 | Semikron Elektronik Gmbh | Schnelle leistungsdiode |
| DE4135258A1 (de) * | 1991-10-25 | 1993-04-29 | Semikron Elektronik Gmbh | Schnelle leistungsdiode |
| DE4137840A1 (de) * | 1991-11-16 | 1993-06-03 | Asea Brown Boveri | Halbleiterschalter zum sperren hoher spannungen |
| US5773858A (en) * | 1992-01-17 | 1998-06-30 | Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh & Co. Kg. | Power diode |
| DE4201183A1 (de) * | 1992-01-17 | 1993-07-22 | Eupec Gmbh & Co Kg | Leistungsdiode |
| DE4305040A1 (de) * | 1993-02-18 | 1994-08-25 | Eupec Gmbh & Co Kg | Freilaufdiode für einen GTO-Thyristor |
| DE4305040C2 (de) * | 1993-02-18 | 1999-07-22 | Eupec Gmbh & Co Kg | Freilaufdiode für einen GTO-Thyristor |
| WO2006029921A1 (de) * | 2004-09-13 | 2006-03-23 | Robert Bosch Gmbh | Halbleiteranordnung zur spannungsbegrenzung |
| JP2008512861A (ja) * | 2004-09-13 | 2008-04-24 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | 電圧制限用の半導体構成体 |
| US7671379B2 (en) | 2004-09-13 | 2010-03-02 | Robert Bosch Gmbh | Semiconductor system for voltage limitation |
| CN101019238B (zh) * | 2004-09-13 | 2010-06-02 | 罗伯特·博世有限公司 | 用于电压限制的半导体结构 |
| EP2073274A1 (en) | 2007-12-19 | 2009-06-24 | ABB Technology AG | Diode |
| WO2009077619A1 (en) * | 2007-12-19 | 2009-06-25 | Abb Technology | Diode |
| US8466491B2 (en) | 2011-05-12 | 2013-06-18 | Infineon Technologies Austria Ag | Semiconductor component with improved softness |
| US9324783B2 (en) | 2014-09-30 | 2016-04-26 | Infineon Technologies Ag | Soft switching semiconductor device and method for producing thereof |
| WO2020201361A1 (en) | 2019-04-02 | 2020-10-08 | Abb Power Grids Switzerland Ag | Segmented power diode structure with improved reverse recovery |
| US11967638B2 (en) | 2019-04-02 | 2024-04-23 | Hitachi Energy Ltd | Segmented power diode structure with improved reverse recovery |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3631136C2 (enrdf_load_stackoverflow) | 1992-09-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |