DE3604342A1 - Verfahren zur erzeugung eines musters - Google Patents

Verfahren zur erzeugung eines musters

Info

Publication number
DE3604342A1
DE3604342A1 DE19863604342 DE3604342A DE3604342A1 DE 3604342 A1 DE3604342 A1 DE 3604342A1 DE 19863604342 DE19863604342 DE 19863604342 DE 3604342 A DE3604342 A DE 3604342A DE 3604342 A1 DE3604342 A1 DE 3604342A1
Authority
DE
Germany
Prior art keywords
light
substrate
film
gas
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19863604342
Other languages
German (de)
English (en)
Other versions
DE3604342C2 (https=
Inventor
Nobuo Hayasaka
Yasuhiro Tokio/Tokyo Horiike
Haruo Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3604342A1 publication Critical patent/DE3604342A1/de
Application granted granted Critical
Publication of DE3604342C2 publication Critical patent/DE3604342C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0041—Photosensitive materials providing an etching agent upon exposure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE19863604342 1985-02-14 1986-02-12 Verfahren zur erzeugung eines musters Granted DE3604342A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60025229A JPS61187237A (ja) 1985-02-14 1985-02-14 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
DE3604342A1 true DE3604342A1 (de) 1986-08-14
DE3604342C2 DE3604342C2 (https=) 1991-09-12

Family

ID=12160139

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863604342 Granted DE3604342A1 (de) 1985-02-14 1986-02-12 Verfahren zur erzeugung eines musters

Country Status (4)

Country Link
US (1) US4698238A (https=)
JP (1) JPS61187237A (https=)
DE (1) DE3604342A1 (https=)
GB (1) GB2172246B (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0363982A3 (en) * 1988-10-14 1990-06-13 Hitachi, Ltd. Dry etching method
EP0436812A1 (en) * 1989-12-20 1991-07-17 Texas Instruments Incorporated Copper etch process and printed circuit formed thereby
EP0513940A3 (en) * 1988-03-22 1993-01-20 British Telecommunications Public Limited Company Etching method
US5318662A (en) * 1989-12-20 1994-06-07 Texas Instruments Incorporated Copper etch process using halides
DE19860179A1 (de) * 1998-12-24 2000-06-29 Audi Ag Verfahren zur Erzeugung einer strukturierten Maskierung

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3826046A1 (de) * 1987-08-17 1989-03-02 Asea Brown Boveri Verfahren zur herstellung von metallischen schichten
US5310624A (en) * 1988-01-29 1994-05-10 Massachusetts Institute Of Technology Integrated circuit micro-fabrication using dry lithographic processes
GB8927377D0 (en) * 1989-12-04 1990-01-31 Univ Edinburgh Improvements in and relating to amperometric assays
DE69132523D1 (de) * 1990-05-09 2001-03-08 Canon Kk Erzeugung von Mustern und Herstellungsverfahren für Halbleiteranordnungen mit diesem Muster
ATE200829T1 (de) * 1990-09-26 2001-05-15 Canon Kk Photolithographisches verarbeitungsverfahren und vorrichtung
US5296271A (en) * 1991-06-13 1994-03-22 Motorola, Inc. Microwave treatment of photoresist on a substrate
US6107102A (en) * 1995-06-07 2000-08-22 Regents Of The University Of California Therapeutic microdevices and methods of making and using same
JPH11507913A (ja) * 1995-06-07 1999-07-13 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 治療用マイクロデバイスならびにその製造方法および使用方法
NZ516848A (en) * 1997-06-20 2004-03-26 Ciphergen Biosystems Inc Retentate chromatography apparatus with applications in biology and medicine
SG115381A1 (en) * 2001-06-20 2005-10-28 Univ Singapore Removal of organic layers from organic electronic devices
US8993221B2 (en) 2012-02-10 2015-03-31 Pixelligent Technologies, Llc Block co-polymer photoresist
CN1823295A (zh) * 2003-07-17 2006-08-23 皇家飞利浦电子股份有限公司 制造反射镜以及包括这种反射镜的液晶显示器件的方法
KR20090025389A (ko) * 2006-07-10 2009-03-10 픽셀리전트 테크놀로지스 엘엘씨 포토리소그래피용 레지스트
US8420978B2 (en) * 2007-01-18 2013-04-16 The Board Of Trustees Of The University Of Illinois High throughput, low cost dual-mode patterning method for large area substrates

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4107349A (en) * 1977-08-12 1978-08-15 The United States Of America As Represented By The Secretary Of The Army Method of adjusting the frequency of piezoelectric resonators
EP0162711A2 (en) * 1984-05-25 1985-11-27 Kabushiki Kaisha Toshiba Method of selectively forming an insulation layer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4414059A (en) * 1982-12-09 1983-11-08 International Business Machines Corporation Far UV patterning of resist materials
JPS59194440A (ja) * 1983-04-18 1984-11-05 Mitsubishi Electric Corp パタ−ン形成装置
JPS59194437A (ja) * 1983-04-18 1984-11-05 Mitsubishi Electric Corp パタ−ン加工装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4107349A (en) * 1977-08-12 1978-08-15 The United States Of America As Represented By The Secretary Of The Army Method of adjusting the frequency of piezoelectric resonators
EP0162711A2 (en) * 1984-05-25 1985-11-27 Kabushiki Kaisha Toshiba Method of selectively forming an insulation layer

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0513940A3 (en) * 1988-03-22 1993-01-20 British Telecommunications Public Limited Company Etching method
EP0363982A3 (en) * 1988-10-14 1990-06-13 Hitachi, Ltd. Dry etching method
US4985114A (en) * 1988-10-14 1991-01-15 Hitachi, Ltd. Dry etching by alternately etching and depositing
EP0436812A1 (en) * 1989-12-20 1991-07-17 Texas Instruments Incorporated Copper etch process and printed circuit formed thereby
US5318662A (en) * 1989-12-20 1994-06-07 Texas Instruments Incorporated Copper etch process using halides
DE19860179A1 (de) * 1998-12-24 2000-06-29 Audi Ag Verfahren zur Erzeugung einer strukturierten Maskierung

Also Published As

Publication number Publication date
DE3604342C2 (https=) 1991-09-12
JPS61187237A (ja) 1986-08-20
GB8603417D0 (en) 1986-03-19
US4698238A (en) 1987-10-06
GB2172246A (en) 1986-09-17
GB2172246B (en) 1988-12-21

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)