DE3587038D1 - Verfahren zur herstellung von polykristallinem material und vorrichtung dafuer. - Google Patents

Verfahren zur herstellung von polykristallinem material und vorrichtung dafuer.

Info

Publication number
DE3587038D1
DE3587038D1 DE8585202098T DE3587038T DE3587038D1 DE 3587038 D1 DE3587038 D1 DE 3587038D1 DE 8585202098 T DE8585202098 T DE 8585202098T DE 3587038 T DE3587038 T DE 3587038T DE 3587038 D1 DE3587038 D1 DE 3587038D1
Authority
DE
Germany
Prior art keywords
heating
submitting
minute
polycrystalline material
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585202098T
Other languages
English (en)
Other versions
DE3587038T2 (de
Inventor
Rese Leonardo Di
Daniele Margadonna
Vincenzo Paraggio
Ernesto Scafe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PRAGMA SpA
Original Assignee
PRAGMA SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PRAGMA SpA filed Critical PRAGMA SpA
Publication of DE3587038D1 publication Critical patent/DE3587038D1/de
Application granted granted Critical
Publication of DE3587038T2 publication Critical patent/DE3587038T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Glass Compositions (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
DE8585202098T 1984-12-21 1985-12-18 Verfahren zur herstellung von polykristallinem material und vorrichtung dafuer. Expired - Lifetime DE3587038T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT24196/84A IT1178785B (it) 1984-12-21 1984-12-21 Procedimento per la preparazione di materiali policristallini ed apparechiatura atta alla sua realizzazione

Publications (2)

Publication Number Publication Date
DE3587038D1 true DE3587038D1 (de) 1993-03-11
DE3587038T2 DE3587038T2 (de) 1993-07-08

Family

ID=11212488

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585202098T Expired - Lifetime DE3587038T2 (de) 1984-12-21 1985-12-18 Verfahren zur herstellung von polykristallinem material und vorrichtung dafuer.

Country Status (4)

Country Link
EP (1) EP0186249B1 (de)
AT (1) ATE85033T1 (de)
DE (1) DE3587038T2 (de)
IT (1) IT1178785B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5116456A (en) * 1988-04-18 1992-05-26 Solon Technologies, Inc. Apparatus and method for growth of large single crystals in plate/slab form
JP3523986B2 (ja) * 1997-07-02 2004-04-26 シャープ株式会社 多結晶半導体の製造方法および製造装置
DE19855061B4 (de) * 1998-11-28 2012-05-16 Ald Vacuum Technologies Ag Schmelzofen zum Schmelzen von Silizium
DE102011007708A1 (de) * 2011-04-19 2012-10-25 Sgl Carbon Se Tiegelanordnung
CN103409798B (zh) * 2013-08-03 2016-02-24 安徽大晟新能源设备科技有限公司 准单晶铸锭炉的下加热器固定结构

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4243471A (en) * 1978-05-02 1981-01-06 International Business Machines Corporation Method for directional solidification of silicon
DE2925679A1 (de) * 1979-06-26 1981-01-22 Heliotronic Gmbh Verfahren zur herstellung von siliciumstaeben
ATE16203T1 (de) * 1980-12-31 1985-11-15 Solarex Corp Verfahren zur herstellung von semikristallinischem silizium und erzieltes produkt.
DE3316546C1 (de) * 1983-05-06 1984-04-26 Philips Patentverwaltung Gmbh, 2000 Hamburg Kalter Tiegel fuer das Erschmelzen und die Kristallisation nichtmetallischer anorganischer Verbindungen
FR2553232B1 (fr) * 1983-10-05 1985-12-27 Comp Generale Electricite Procede et dispositif pour elaborer un lingot d'un materiau semi-conducteur polycristallin

Also Published As

Publication number Publication date
IT8424196A0 (it) 1984-12-21
EP0186249A2 (de) 1986-07-02
EP0186249A3 (en) 1989-07-05
ATE85033T1 (de) 1993-02-15
EP0186249B1 (de) 1993-01-27
IT1178785B (it) 1987-09-16
DE3587038T2 (de) 1993-07-08

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Legal Events

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8380 Miscellaneous part iii

Free format text: DER PATENTINHABER LAUTET RICHTIG: AGIP S.P.A., MAILAND, MILANO, IT

8364 No opposition during term of opposition