DE3586665T2 - Vielfachanordnung von halbleiterlasern. - Google Patents

Vielfachanordnung von halbleiterlasern.

Info

Publication number
DE3586665T2
DE3586665T2 DE8585303326T DE3586665T DE3586665T2 DE 3586665 T2 DE3586665 T2 DE 3586665T2 DE 8585303326 T DE8585303326 T DE 8585303326T DE 3586665 T DE3586665 T DE 3586665T DE 3586665 T2 DE3586665 T2 DE 3586665T2
Authority
DE
Germany
Prior art keywords
semiconductor lasers
multiple arrangement
arrangement
lasers
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585303326T
Other languages
English (en)
Other versions
DE3586665D1 (de
Inventor
Toshiro Hayakawa
Takahiro Suyama
Saburo Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3586665D1 publication Critical patent/DE3586665D1/de
Publication of DE3586665T2 publication Critical patent/DE3586665T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4081—Near-or far field control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8585303326T 1984-05-10 1985-05-10 Vielfachanordnung von halbleiterlasern. Expired - Lifetime DE3586665T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59093986A JPS60236274A (ja) 1984-05-10 1984-05-10 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
DE3586665D1 DE3586665D1 (de) 1992-10-29
DE3586665T2 true DE3586665T2 (de) 1993-03-11

Family

ID=14097718

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585303326T Expired - Lifetime DE3586665T2 (de) 1984-05-10 1985-05-10 Vielfachanordnung von halbleiterlasern.

Country Status (4)

Country Link
US (1) US4723253A (de)
EP (1) EP0161924B1 (de)
JP (1) JPS60236274A (de)
DE (1) DE3586665T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61113293A (ja) * 1984-11-07 1986-05-31 Sharp Corp 半導体レ−ザアレイ装置
US4706255A (en) * 1985-05-20 1987-11-10 Xerox Corporation Phased array semiconductor laser with preferred emission in the fundamental supermode
JPH0722214B2 (ja) * 1985-07-18 1995-03-08 シャープ株式会社 半導体レーザ素子の製造方法
EP0312652B1 (de) * 1987-10-19 1993-09-01 Hitachi, Ltd. Optischer Aufbau mit einer phasenstarr gekoppelten Laserdiodenzeile
US5214306A (en) * 1991-01-29 1993-05-25 Sanyo Electric Co., Ltd. Light emitting diode
BE1007282A3 (nl) * 1993-07-12 1995-05-09 Philips Electronics Nv Opto-electronische halfgeleiderinrichting met een array van halfgeleiderdiodelasers en werkwijze ter vervaardiging daarvan.

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4255717A (en) * 1978-10-30 1981-03-10 Xerox Corporation Monolithic multi-emitting laser device
US4369513A (en) * 1979-11-09 1983-01-18 Hitachi, Ltd. Semiconductor laser device
US4348763A (en) * 1980-08-07 1982-09-07 Hewlett-Packard Company Multiple stripe leaky mode laser
JPS57170584A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Semiconductor laser device
US4603421A (en) * 1982-11-24 1986-07-29 Xerox Corporation Incoherent composite multi-emitter laser for an optical arrangement
US4577321A (en) * 1983-09-19 1986-03-18 Honeywell Inc. Integrated quantum well lasers for wavelength division multiplexing

Also Published As

Publication number Publication date
US4723253A (en) 1988-02-02
EP0161924A3 (en) 1987-05-20
EP0161924B1 (de) 1992-09-23
DE3586665D1 (de) 1992-10-29
EP0161924A2 (de) 1985-11-21
JPS60236274A (ja) 1985-11-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition