DE3586231D1 - Verfahren zur formierung einer passivierungsschicht mit einer selektiven konfiguration auf einem substrat und verfahren zur herstellung von flachgemachten dielektrischen komponenten fuer halbleiterstrukturen. - Google Patents

Verfahren zur formierung einer passivierungsschicht mit einer selektiven konfiguration auf einem substrat und verfahren zur herstellung von flachgemachten dielektrischen komponenten fuer halbleiterstrukturen.

Info

Publication number
DE3586231D1
DE3586231D1 DE8585112098T DE3586231T DE3586231D1 DE 3586231 D1 DE3586231 D1 DE 3586231D1 DE 8585112098 T DE8585112098 T DE 8585112098T DE 3586231 T DE3586231 T DE 3586231T DE 3586231 D1 DE3586231 D1 DE 3586231D1
Authority
DE
Germany
Prior art keywords
shaping
substrate
passivation layer
semiconductor structures
dielectric components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585112098T
Other languages
German (de)
English (en)
Inventor
Constance Joan Araps
George Czornyj
Steven M Kandetzke
Mark Anthony Takacs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3586231D1 publication Critical patent/DE3586231D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C08G73/1071—Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6539—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/2457—Parallel ribs and/or grooves

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Local Oxidation Of Silicon (AREA)
DE8585112098T 1984-10-19 1985-09-24 Verfahren zur formierung einer passivierungsschicht mit einer selektiven konfiguration auf einem substrat und verfahren zur herstellung von flachgemachten dielektrischen komponenten fuer halbleiterstrukturen. Expired - Lifetime DE3586231D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/663,017 US4568601A (en) 1984-10-19 1984-10-19 Use of radiation sensitive polymerizable oligomers to produce polyimide negative resists and planarized dielectric components for semiconductor structures

Publications (1)

Publication Number Publication Date
DE3586231D1 true DE3586231D1 (de) 1992-07-23

Family

ID=24660172

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585112098T Expired - Lifetime DE3586231D1 (de) 1984-10-19 1985-09-24 Verfahren zur formierung einer passivierungsschicht mit einer selektiven konfiguration auf einem substrat und verfahren zur herstellung von flachgemachten dielektrischen komponenten fuer halbleiterstrukturen.

Country Status (4)

Country Link
US (1) US4568601A (https=)
EP (1) EP0178500B1 (https=)
JP (1) JPS6197930A (https=)
DE (1) DE3586231D1 (https=)

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JPS61102742A (ja) * 1984-10-25 1986-05-21 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 誘導体分離用の溝の充填方法
US4665010A (en) * 1985-04-29 1987-05-12 International Business Machines Corporation Method of fabricating photopolymer isolation trenches in the surface of a semiconductor wafer
US4612210A (en) * 1985-07-25 1986-09-16 International Business Machines Corporation Process for planarizing a substrate
US4665007A (en) * 1985-08-19 1987-05-12 International Business Machines Corporation Planarization process for organic filling of deep trenches
JPH069222B2 (ja) * 1986-01-07 1994-02-02 日立化成工業株式会社 多層配線構造の製造法
EP0291779B1 (de) * 1987-05-18 1994-07-27 Siemens Aktiengesellschaft Wärmebeständige Positivresists und Verfahren zur Herstellung wärmebeständiger Reliefstrukturen
JP2643262B2 (ja) * 1988-03-23 1997-08-20 日本電気株式会社 半導体装置の製造方法
US4908096A (en) * 1988-06-24 1990-03-13 Allied-Signal Inc. Photodefinable interlevel dielectrics
DE3833438A1 (de) * 1988-10-01 1990-04-05 Basf Ag Strahlungsempfindliche gemische und deren verwendung
DE3833437A1 (de) * 1988-10-01 1990-04-05 Basf Ag Strahlungsempfindliche gemische und deren verwendung
EP0443352B1 (en) * 1990-02-20 1995-12-06 National Starch and Chemical Investment Holding Corporation Polyimides end-capped with diaryl substituted acetylene
US5242551A (en) * 1991-03-28 1993-09-07 International Business Machines Corporation Electron induced transformation of an isoimide to an n-imide and uses thereof
US5326643A (en) * 1991-10-07 1994-07-05 International Business Machines Corporation Adhesive layer in multi-level packaging and organic material as a metal diffusion barrier
DE4300765C1 (de) * 1993-01-14 1993-12-23 Bosch Gmbh Robert Verfahren zum Planarisieren grabenförmiger Strukturen
KR100384746B1 (ko) * 1994-09-13 2003-08-25 제온 코포레이션 감광성 폴리이미드 수지 조성물
US6387810B2 (en) * 1999-06-28 2002-05-14 International Business Machines Corporation Method for homogenizing device parameters through photoresist planarization
US6482716B1 (en) * 2000-01-11 2002-11-19 Infineon Technologies North America Corp. Uniform recess depth of recessed resist layers in trench structure
EP1143506A3 (en) * 2000-04-04 2004-02-25 Nippon Telegraph and Telephone Corporation Pattern forming method
US6905811B2 (en) * 2003-04-22 2005-06-14 Headway Technologies, Inc. Method to form reduced dimension pattern with good edge roughness
CN106057779B (zh) * 2016-07-29 2018-09-21 深圳市威兆半导体有限公司 一种半导体器件结构

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3575740A (en) * 1967-06-08 1971-04-20 Ibm Method of fabricating planar dielectric isolated integrated circuits
GB1230421A (https=) * 1967-09-15 1971-05-05
US3515585A (en) * 1968-04-24 1970-06-02 Ibm Gelation coating method for electronic circuit panels
US3796613A (en) * 1971-06-18 1974-03-12 Ibm Method of forming dielectric isolation for high density pedestal semiconductor devices
JPS5144871B2 (https=) * 1971-09-25 1976-12-01
US3961355A (en) * 1972-06-30 1976-06-01 International Business Machines Corporation Semiconductor device having electrically insulating barriers for surface leakage sensitive devices and method of forming
US3985597A (en) * 1975-05-01 1976-10-12 International Business Machines Corporation Process for forming passivated metal interconnection system with a planar surface
US4164458A (en) * 1977-03-07 1979-08-14 Allied Chemical Corporation Production of radiation crosslinked polymeric compositions using diacetylenes
US4160991A (en) * 1977-10-25 1979-07-10 International Business Machines Corporation High performance bipolar device and method for making same
EP0019391B1 (en) * 1979-05-12 1982-10-06 Fujitsu Limited Improvement in method of manufacturing electronic device having multilayer wiring structure
US4367119A (en) * 1980-08-18 1983-01-04 International Business Machines Corporation Planar multi-level metal process with built-in etch stop
US4329419A (en) * 1980-09-03 1982-05-11 E. I. Du Pont De Nemours And Company Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors
US4333794A (en) * 1981-04-07 1982-06-08 International Business Machines Corporation Omission of thick Si3 N4 layers in ISA schemes
DE3242113A1 (de) * 1982-11-13 1984-05-24 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur herstellung einer duennen dielektrischen isolation in einem siliciumhalbleiterkoerper
JPS60119730A (ja) * 1983-11-30 1985-06-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ポリイミド誘導体薄膜の形成方法
JPS60120723A (ja) * 1983-11-30 1985-06-28 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 電子装置

Also Published As

Publication number Publication date
JPS6197930A (ja) 1986-05-16
EP0178500A2 (en) 1986-04-23
US4568601A (en) 1986-02-04
EP0178500A3 (en) 1989-06-14
JPH031826B2 (https=) 1991-01-11
EP0178500B1 (en) 1992-06-17

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