DE3584917D1 - Verfahren zur bildung hermetisch geschlossener elektrischer durchfuehrungsleiter. - Google Patents

Verfahren zur bildung hermetisch geschlossener elektrischer durchfuehrungsleiter.

Info

Publication number
DE3584917D1
DE3584917D1 DE8585901155T DE3584917T DE3584917D1 DE 3584917 D1 DE3584917 D1 DE 3584917D1 DE 8585901155 T DE8585901155 T DE 8585901155T DE 3584917 T DE3584917 T DE 3584917T DE 3584917 D1 DE3584917 D1 DE 3584917D1
Authority
DE
Germany
Prior art keywords
region
planar
periphery
feedthrough conductor
insulative layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585901155T
Other languages
English (en)
Inventor
Kurt E Petersen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CONCHA CORP
Original Assignee
CONCHA CORP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CONCHA CORP filed Critical CONCHA CORP
Application granted granted Critical
Publication of DE3584917D1 publication Critical patent/DE3584917D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Ladders (AREA)
  • Cylinder Crankcases Of Internal Combustion Engines (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Resistance Heating (AREA)
DE8585901155T 1984-01-25 1985-01-24 Verfahren zur bildung hermetisch geschlossener elektrischer durchfuehrungsleiter. Expired - Fee Related DE3584917D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/573,508 US4525766A (en) 1984-01-25 1984-01-25 Method and apparatus for forming hermetically sealed electrical feedthrough conductors
PCT/US1985/000131 WO1985003381A1 (en) 1984-01-25 1985-01-24 Method and apparatus for forming hermetically sealed electrical feedthrough conductors

Publications (1)

Publication Number Publication Date
DE3584917D1 true DE3584917D1 (de) 1992-01-30

Family

ID=24292270

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585901155T Expired - Fee Related DE3584917D1 (de) 1984-01-25 1985-01-24 Verfahren zur bildung hermetisch geschlossener elektrischer durchfuehrungsleiter.

Country Status (6)

Country Link
US (1) US4525766A (de)
EP (1) EP0169241B1 (de)
JP (1) JPS61501236A (de)
AT (1) ATE70663T1 (de)
DE (1) DE3584917D1 (de)
WO (1) WO1985003381A1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0711461B2 (ja) * 1986-06-13 1995-02-08 株式会社日本自動車部品総合研究所 圧力検出器
US4769622A (en) * 1986-11-28 1988-09-06 General Instrument Corporation Reed switch having improved glass-to-metal seal
GB8718637D0 (en) * 1987-08-06 1987-09-09 Spectrol Reliance Ltd Sealing electrical feedthrough
US4996627A (en) * 1989-01-30 1991-02-26 Dresser Industries, Inc. High sensitivity miniature pressure transducer
US5164328A (en) * 1990-06-25 1992-11-17 Motorola, Inc. Method of bump bonding and sealing an accelerometer chip onto an integrated circuit chip
US5513793A (en) * 1994-10-07 1996-05-07 Advanced Bionics Corporation Brazeless ceramic-to-metal bond for use in implantable devices
US5738270A (en) * 1994-10-07 1998-04-14 Advanced Bionics Corporation Brazeless ceramic-to-metal bonding for use in implantable devices
JP3077543B2 (ja) * 1995-01-13 2000-08-14 セイコーエプソン株式会社 被覆導電体およびその製造方法、およびこれを用いた電子部品、電子機器
US5637802A (en) * 1995-02-28 1997-06-10 Rosemount Inc. Capacitive pressure sensor for a pressure transmitted where electric field emanates substantially from back sides of plates
US6484585B1 (en) 1995-02-28 2002-11-26 Rosemount Inc. Pressure sensor for a pressure transmitter
US5817984A (en) * 1995-07-28 1998-10-06 Medtronic Inc Implantable medical device wtih multi-pin feedthrough
US5871513A (en) * 1997-04-30 1999-02-16 Medtronic Inc. Centerless ground feedthrough pin for an electrical power source in an implantable medical device
JPH1174396A (ja) * 1997-08-28 1999-03-16 Kyocera Corp 高周波用入出力端子ならびに高周波用半導体素子収納用パッケージ
US6516808B2 (en) 1997-09-12 2003-02-11 Alfred E. Mann Foundation For Scientific Research Hermetic feedthrough for an implantable device
US6244104B1 (en) 1998-12-04 2001-06-12 Bridgestone/Firestone Research, Inc. Method for preparing an innerliner of a pneumatic tire for the quick bonding of an electronic monitoring device
US6309494B1 (en) 1998-12-04 2001-10-30 Bridgestone/Firestone Research, Inc. Method of attaching sensitive electronic equipment to the inner surface of a tire
US6508129B1 (en) 2000-01-06 2003-01-21 Rosemount Inc. Pressure sensor capsule with improved isolation
CN1151367C (zh) 2000-01-06 2004-05-26 罗斯蒙德公司 微机电系统(mems)用的电互联的晶粒生长
US6520020B1 (en) 2000-01-06 2003-02-18 Rosemount Inc. Method and apparatus for a direct bonded isolated pressure sensor
US6505516B1 (en) 2000-01-06 2003-01-14 Rosemount Inc. Capacitive pressure sensing with moving dielectric
US6561038B2 (en) 2000-01-06 2003-05-13 Rosemount Inc. Sensor with fluid isolation barrier
US8266465B2 (en) 2000-07-26 2012-09-11 Bridgestone Americas Tire Operation, LLC System for conserving battery life in a battery operated device
US7161476B2 (en) 2000-07-26 2007-01-09 Bridgestone Firestone North American Tire, Llc Electronic tire management system
BRPI0112781B1 (pt) 2000-07-26 2016-03-08 Bridgestone Firestone North Am sistema para medir pelo menos um parâmetro de pneumático, método para monitorar eletricamente parâmetros pneumáticos e interrogador
GB0122165D0 (en) * 2001-09-13 2001-10-31 Randox Lab Ltd Method of sealing electrodes
US20030191505A1 (en) * 2002-04-09 2003-10-09 Mark Gryzwa Magnetic structure for feedthrough filter assembly
US6848316B2 (en) * 2002-05-08 2005-02-01 Rosemount Inc. Pressure sensor assembly
US6759309B2 (en) * 2002-05-28 2004-07-06 Applied Materials, Inc. Micromachined structures including glass vias with internal conductive layers anodically bonded to silicon-containing substrates
CA2436248C (en) * 2002-07-31 2010-11-09 Schlumberger Canada Limited Multiple interventionless actuated downhole valve and method
US7719854B2 (en) 2003-07-31 2010-05-18 Cardiac Pacemakers, Inc. Integrated electromagnetic interference filters and feedthroughs
US7622782B2 (en) * 2005-08-24 2009-11-24 General Electric Company Pressure sensors and methods of making the same
US7998777B1 (en) 2010-12-15 2011-08-16 General Electric Company Method for fabricating a sensor
US9010200B2 (en) 2012-08-06 2015-04-21 Amphenol Thermometrics, Inc. Device for measuring forces and method of making the same
WO2016176491A1 (en) * 2015-04-28 2016-11-03 Applied Materials, Inc. Method and apparatus for fabricating battery with mesa structures and battery comprising same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE590576A (de) * 1959-05-06
US3174112A (en) * 1960-07-29 1965-03-16 Westinghouse Electric Corp Semiconductor devices providing the functions of a plurality of conventional components
US3318744A (en) * 1963-03-27 1967-05-09 Reeves Bros Inc Method of laminating polyurethane foam
US4193836A (en) * 1963-12-16 1980-03-18 Signetics Corporation Method for making semiconductor structure
US3386008A (en) * 1964-08-31 1968-05-28 Cts Corp Integrated circuit
US3397447A (en) * 1964-10-22 1968-08-20 Dow Corning Method of making semiconductor circuits
GB1138401A (en) * 1965-05-06 1969-01-01 Mallory & Co Inc P R Bonding
JPS6030102B2 (ja) * 1980-07-14 1985-07-15 ヤマハ株式会社 半導体装置の製法

Also Published As

Publication number Publication date
JPS61501236A (ja) 1986-06-19
EP0169241A4 (de) 1988-04-26
US4525766A (en) 1985-06-25
WO1985003381A1 (en) 1985-08-01
ATE70663T1 (de) 1992-01-15
EP0169241A1 (de) 1986-01-29
EP0169241B1 (de) 1991-12-18

Similar Documents

Publication Publication Date Title
DE3584917D1 (de) Verfahren zur bildung hermetisch geschlossener elektrischer durchfuehrungsleiter.
DE3574080D1 (en) Silicon semiconductor substrate with an insulating layer embedded therein and method for forming the same
EP0794616A3 (de) Elektronisches Bauteil und Herstellungsverfahren
KR900010950A (ko) 기판으로부터 전기절연된 반도체막의 제조방법
ES8206095A1 (es) Dispositivo rectificador a base de semiconductores
SE427400B (sv) Forfarande for framstellning av elektriska ledare pa ett isolerande substrat
CA2009068A1 (en) Trench jfet integrated circuit elements
JPS56150871A (en) Semiconductor device
US2993153A (en) Seal
US3206827A (en) Method of producing a semiconductor device
EP0202477A3 (de) Verfahren zum Herstellen elektrischer Kurzschlüsse zwischen benachbarten Gebieten in einer Halbleiteranordnung mit isoliertem Gate
EP0072690A3 (de) MIS Halbleiteranordnung und Verfahren zu deren Herstellung
ATE67897T1 (de) Integrierte halbleiterschaltung mit einem elektrisch leitenden flaechenelement.
JPS5411696A (en) Sealing method of electronic components
GB1259804A (en) Improvements in or relating to the manufacture of electrical circuit assemblies
JPH0382059A (ja) 樹脂封止型半導体装置
EP0362571A3 (de) Verfahren zum Herstellen von Halbleitervorrichtungen
JPS617638A (ja) 半導体装置
EP0396276A3 (de) Verfahren zum Herstellen einer Halbeitervorrichtung
JPS5667946A (en) Semiconductor system
JPS55108771A (en) Semiconductor device
JPS558191A (en) Elastic surface wave device
GB2126786A (en) Ion sensitive field effect transistor encapsulation
JPS63262859A (ja) 混成集積回路装置
JPS56140644A (en) Semiconductor device and manufacture thereof

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee