DE3571535D1 - Integrated circuit semiconductor device formed on a wafer - Google Patents

Integrated circuit semiconductor device formed on a wafer

Info

Publication number
DE3571535D1
DE3571535D1 DE8585401948T DE3571535T DE3571535D1 DE 3571535 D1 DE3571535 D1 DE 3571535D1 DE 8585401948 T DE8585401948 T DE 8585401948T DE 3571535 T DE3571535 T DE 3571535T DE 3571535 D1 DE3571535 D1 DE 3571535D1
Authority
DE
Germany
Prior art keywords
wafer
semiconductor device
integrated circuit
device formed
circuit semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585401948T
Other languages
German (de)
English (en)
Inventor
Tetsu Tanizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3571535D1 publication Critical patent/DE3571535D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/688—Flexible insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
DE8585401948T 1984-10-05 1985-10-04 Integrated circuit semiconductor device formed on a wafer Expired DE3571535D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59209238A JPS61111561A (ja) 1984-10-05 1984-10-05 半導体装置

Publications (1)

Publication Number Publication Date
DE3571535D1 true DE3571535D1 (en) 1989-08-17

Family

ID=16569645

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585401948T Expired DE3571535D1 (en) 1984-10-05 1985-10-04 Integrated circuit semiconductor device formed on a wafer

Country Status (4)

Country Link
US (1) US4721995A (https=)
EP (1) EP0178227B1 (https=)
JP (1) JPS61111561A (https=)
DE (1) DE3571535D1 (https=)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0305398B1 (en) * 1986-05-01 1991-09-25 Honeywell Inc. Multiple integrated circuit interconnection arrangement
US4783695A (en) * 1986-09-26 1988-11-08 General Electric Company Multichip integrated circuit packaging configuration and method
US4937203A (en) * 1986-09-26 1990-06-26 General Electric Company Method and configuration for testing electronic circuits and integrated circuit chips using a removable overlay layer
US4884122A (en) * 1988-08-05 1989-11-28 General Electric Company Method and configuration for testing electronic circuits and integrated circuit chips using a removable overlay layer
US5094709A (en) * 1986-09-26 1992-03-10 General Electric Company Apparatus for packaging integrated circuit chips employing a polymer film overlay layer
US4866508A (en) * 1986-09-26 1989-09-12 General Electric Company Integrated circuit packaging configuration for rapid customized design and unique test capability
EP0286660B1 (en) * 1986-09-26 1992-03-04 General Electric Company Method and configuration for testing electronic circuits and integrated circuit chips using a removable overlay layer
JPS63131561A (ja) * 1986-11-18 1988-06-03 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 電子パツケージ
US4835704A (en) * 1986-12-29 1989-05-30 General Electric Company Adaptive lithography system to provide high density interconnect
US5191224A (en) * 1987-04-22 1993-03-02 Hitachi, Ltd. Wafer scale of full wafer memory system, packaging method thereof, and wafer processing method employed therein
US4933810A (en) * 1987-04-30 1990-06-12 Honeywell Inc. Integrated circuit interconnector
US5089881A (en) * 1988-11-03 1992-02-18 Micro Substrates, Inc. Fine-pitch chip carrier
US5038201A (en) * 1988-11-08 1991-08-06 Westinghouse Electric Corp. Wafer scale integrated circuit apparatus
DE68929282T2 (de) * 1988-11-09 2001-06-07 Nitto Denko Corp., Ibaraki Leitersubstrat, Filmträger, Halbleiteranordnung mit dem Filmträger und Montagestruktur mit der Halbleiteranordnung
JPH02174255A (ja) * 1988-12-27 1990-07-05 Mitsubishi Electric Corp 半導体集積回路装置
US5349219A (en) * 1989-06-15 1994-09-20 Fujitsu Limited Wafer-scale semiconductor integrated circuit device and method of forming interconnection lines arranged between chips of wafer-scale semiconductor integrated circuit device
JPH04503431A (ja) * 1989-07-03 1992-06-18 ゼネラル・エレクトリック・カンパニイ 力の強い環境内に配置される電子装置
US5231304A (en) * 1989-07-27 1993-07-27 Grumman Aerospace Corporation Framed chip hybrid stacked layer assembly
GB8918482D0 (en) * 1989-08-14 1989-09-20 Inmos Ltd Packaging semiconductor chips
US5239191A (en) * 1990-01-19 1993-08-24 Kabushiki Kaisha Toshiba Semiconductor wafer
US5157255A (en) * 1990-04-05 1992-10-20 General Electric Company Compact, thermally efficient focal plane array and testing and repair thereof
US5146303A (en) * 1990-04-05 1992-09-08 General Electric Company Compact, thermally efficient focal plane array and testing and repair thereof
US5237203A (en) * 1991-05-03 1993-08-17 Trw Inc. Multilayer overlay interconnect for high-density packaging of circuit elements
JP2715810B2 (ja) * 1991-07-25 1998-02-18 日本電気株式会社 フィルムキャリア半導体装置とその製造方法
US5184284A (en) * 1991-09-03 1993-02-02 International Business Machines Corporation Method and apparatus for implementing engineering changes for integrated circuit module
US5239448A (en) * 1991-10-28 1993-08-24 International Business Machines Corporation Formulation of multichip modules
US5355019A (en) * 1992-03-04 1994-10-11 At&T Bell Laboratories Devices with tape automated bonding
JPH06151685A (ja) * 1992-11-04 1994-05-31 Mitsubishi Electric Corp Ｍｃｐ半導体装置
US5703405A (en) * 1993-03-15 1997-12-30 Motorola, Inc. Integrated circuit chip formed from processing two opposing surfaces of a wafer
JPH07169872A (ja) * 1993-12-13 1995-07-04 Fujitsu Ltd 半導体装置及びその製造方法
US6222212B1 (en) 1994-01-27 2001-04-24 Integrated Device Technology, Inc. Semiconductor device having programmable interconnect layers
US5766972A (en) * 1994-06-02 1998-06-16 Mitsubishi Denki Kabushiki Kaisha Method of making resin encapsulated semiconductor device with bump electrodes
US5891761A (en) * 1994-06-23 1999-04-06 Cubic Memory, Inc. Method for forming vertical interconnect process for silicon segments with thermally conductive epoxy preform
US6486528B1 (en) 1994-06-23 2002-11-26 Vertical Circuits, Inc. Silicon segment programming apparatus and three terminal fuse configuration
US6080596A (en) * 1994-06-23 2000-06-27 Cubic Memory Inc. Method for forming vertical interconnect process for silicon segments with dielectric isolation
US5657206A (en) * 1994-06-23 1997-08-12 Cubic Memory, Inc. Conductive epoxy flip-chip package and method
US6255726B1 (en) 1994-06-23 2001-07-03 Cubic Memory, Inc. Vertical interconnect process for silicon segments with dielectric isolation
US6124633A (en) * 1994-06-23 2000-09-26 Cubic Memory Vertical interconnect process for silicon segments with thermally conductive epoxy preform
US5698895A (en) 1994-06-23 1997-12-16 Cubic Memory, Inc. Silicon segment programming method and apparatus
US5675180A (en) * 1994-06-23 1997-10-07 Cubic Memory, Inc. Vertical interconnect process for silicon segments
US6117694A (en) * 1994-07-07 2000-09-12 Tessera, Inc. Flexible lead structures and methods of making same
US5688716A (en) 1994-07-07 1997-11-18 Tessera, Inc. Fan-out semiconductor chip assembly
US6828668B2 (en) * 1994-07-07 2004-12-07 Tessera, Inc. Flexible lead structures and methods of making same
US5518964A (en) * 1994-07-07 1996-05-21 Tessera, Inc. Microelectronic mounting with multiple lead deformation and bonding
US5830782A (en) * 1994-07-07 1998-11-03 Tessera, Inc. Microelectronic element bonding with deformation of leads in rows
US6848173B2 (en) * 1994-07-07 2005-02-01 Tessera, Inc. Microelectric packages having deformed bonded leads and methods therefor
US6429112B1 (en) 1994-07-07 2002-08-06 Tessera, Inc. Multi-layer substrates and fabrication processes
US5798286A (en) * 1995-09-22 1998-08-25 Tessera, Inc. Connecting multiple microelectronic elements with lead deformation
US5666003A (en) * 1994-10-24 1997-09-09 Rohm Co. Ltd. Packaged semiconductor device incorporating heat sink plate
US5639683A (en) * 1994-12-01 1997-06-17 Motorola, Inc. Structure and method for intergrating microwave components on a substrate
JPH08288424A (ja) * 1995-04-18 1996-11-01 Nec Corp 半導体装置
US5653019A (en) * 1995-08-31 1997-08-05 Regents Of The University Of California Repairable chip bonding/interconnect process
RU2133067C1 (ru) * 1996-02-20 1999-07-10 Завьялов Дмитрий Валентинович Интегральная схема
US6667560B2 (en) 1996-05-29 2003-12-23 Texas Instruments Incorporated Board on chip ball grid array
US5936311A (en) * 1996-12-31 1999-08-10 Intel Corporation Integrated circuit alignment marks distributed throughout a surface metal line
US6040624A (en) * 1997-10-02 2000-03-21 Motorola, Inc. Semiconductor device package and method
US6084306A (en) * 1998-05-29 2000-07-04 Texas Instruments Incorporated Bridging method of interconnects for integrated circuit packages
US6300679B1 (en) * 1998-06-01 2001-10-09 Semiconductor Components Industries, Llc Flexible substrate for packaging a semiconductor component
JP2001165998A (ja) * 1999-12-10 2001-06-22 Mitsubishi Electric Corp 半導体モジュール
EP1215725A3 (de) * 2000-12-18 2005-03-23 cubit electronics Gmbh Anordnung zur Aufnahme elektrischer Bauteile und kontaktloser Transponder
JP2003298002A (ja) * 2002-04-02 2003-10-17 Mitsubishi Electric Corp 半導体モジュール
JP2003298003A (ja) * 2002-04-03 2003-10-17 Mitsubishi Electric Corp 半導体モジュール
JP3828473B2 (ja) * 2002-09-30 2006-10-04 株式会社東芝 積層型半導体装置及びその製造方法
US7779782B2 (en) * 2004-08-09 2010-08-24 Lam Research Systems and methods affecting profiles of solutions dispensed across microelectronic topographies during electroless plating processes
GB2549734B (en) 2016-04-26 2020-01-01 Facebook Tech Llc A display
GB2541970B (en) 2015-09-02 2020-08-19 Facebook Tech Llc Display manufacture

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1487945A (en) * 1974-11-20 1977-10-05 Ibm Semiconductor integrated circuit devices
JPS5915183B2 (ja) * 1976-08-16 1984-04-07 株式会社日立製作所 マトリツクス配線基板
FR2382101A1 (fr) * 1977-02-28 1978-09-22 Labo Electronique Physique Dispositif a semi-conducteur, comportant des pattes metalliques isolees
US4246595A (en) * 1977-03-08 1981-01-20 Matsushita Electric Industrial Co., Ltd. Electronics circuit device and method of making the same

Also Published As

Publication number Publication date
JPS61111561A (ja) 1986-05-29
EP0178227A2 (en) 1986-04-16
US4721995A (en) 1988-01-26
EP0178227B1 (en) 1989-07-12
JPH0577184B2 (https=) 1993-10-26
EP0178227A3 (en) 1987-08-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee