SG77388G - Process for manufacturing a semiconductor integrated circuit device - Google Patents
Process for manufacturing a semiconductor integrated circuit deviceInfo
- Publication number
- SG77388G SG77388G SG77388A SG77388A SG77388G SG 77388 G SG77388 G SG 77388G SG 77388 A SG77388 A SG 77388A SG 77388 A SG77388 A SG 77388A SG 77388 G SG77388 G SG 77388G
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- integrated circuit
- semiconductor integrated
- circuit device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76221—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO with a plurality of successive local oxidation steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58190779A JPS6083346A (en) | 1983-10-14 | 1983-10-14 | Semiconductor integrated circuit device |
JP58210834A JPS60103642A (en) | 1983-11-11 | 1983-11-11 | Semiconductor device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
SG77388G true SG77388G (en) | 1991-01-04 |
Family
ID=26506306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG77388A SG77388G (en) | 1983-10-14 | 1988-11-18 | Process for manufacturing a semiconductor integrated circuit device |
Country Status (3)
Country | Link |
---|---|
GB (1) | GB2148593B (en) |
HK (1) | HK30789A (en) |
SG (1) | SG77388G (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4707456A (en) * | 1985-09-18 | 1987-11-17 | Advanced Micro Devices, Inc. | Method of making a planar structure containing MOS and bipolar transistors |
US4688314A (en) * | 1985-10-02 | 1987-08-25 | Advanced Micro Devices, Inc. | Method of making a planar MOS device in polysilicon |
US4686763A (en) * | 1985-10-02 | 1987-08-18 | Advanced Micro Devices, Inc. | Method of making a planar polysilicon bipolar device |
US4738624A (en) * | 1987-04-13 | 1988-04-19 | International Business Machines Corporation | Bipolar transistor structure with self-aligned device and isolation and fabrication process therefor |
JPH0727974B2 (en) * | 1988-04-26 | 1995-03-29 | 三菱電機株式会社 | Method of manufacturing semiconductor memory device |
JP2666384B2 (en) * | 1988-06-30 | 1997-10-22 | ソニー株式会社 | Method for manufacturing semiconductor device |
KR920020676A (en) * | 1991-04-09 | 1992-11-21 | 김광호 | Device Separation Method of Semiconductor Device |
US5232874A (en) * | 1992-06-22 | 1993-08-03 | Micron Technology, Inc. | Method for producing a semiconductor wafer having shallow and deep buried contacts |
GB2322736B (en) * | 1997-02-28 | 2002-06-26 | Int Rectifier Corp | Integrated photovoltaic switch with integrated power device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6043024B2 (en) * | 1978-12-30 | 1985-09-26 | 富士通株式会社 | Manufacturing method of semiconductor device |
US4238278A (en) * | 1979-06-14 | 1980-12-09 | International Business Machines Corporation | Polycrystalline silicon oxidation method for making shallow and deep isolation trenches |
US4339767A (en) * | 1980-05-05 | 1982-07-13 | International Business Machines Corporation | High performance PNP and NPN transistor structure |
US4454647A (en) * | 1981-08-27 | 1984-06-19 | International Business Machines Corporation | Isolation for high density integrated circuits |
JPS5943545A (en) * | 1982-09-06 | 1984-03-10 | Hitachi Ltd | Semiconductor ic device and its manufacture |
-
1984
- 1984-09-06 GB GB08422520A patent/GB2148593B/en not_active Expired
-
1988
- 1988-11-18 SG SG77388A patent/SG77388G/en unknown
-
1989
- 1989-04-13 HK HK30789A patent/HK30789A/en unknown
Also Published As
Publication number | Publication date |
---|---|
GB2148593A (en) | 1985-05-30 |
GB8422520D0 (en) | 1984-10-10 |
HK30789A (en) | 1989-04-21 |
GB2148593B (en) | 1987-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3379621D1 (en) | Semiconductor integrated circuit device and a method for manufacturing the same | |
HK84188A (en) | Process of fabricating a semiconductor integrated circuit device | |
GB2163901B (en) | A semiconductor integrated circuit device and a process for manufacturing such a device | |
GB2177866B (en) | A semiconductor integrated circuit | |
DE3278549D1 (en) | Process for manufacturing a multi-layer semiconductor device | |
DE3261396D1 (en) | Method for manufacturing a hybrid integrated circuit device | |
SG77188G (en) | A semiconductor integrated circuit device | |
MY8600583A (en) | Semiconductor integrated circuit devices and a process for producing the same | |
HK40490A (en) | A semiconductor integrated circuit device | |
SG102592G (en) | Process for producing a semiconductor integrated circuit device including a misfet | |
DE3466952D1 (en) | A method for manufacturing an integrated circuit device | |
HK40090A (en) | A semiconductor integrated circuit device | |
DE3466955D1 (en) | A method for manufacturing an integrated circuit device | |
DE3464670D1 (en) | A method for manufacturing a semiconductor device | |
DE3466953D1 (en) | A method of manufacturing an integrated circuit device | |
DE3063191D1 (en) | Method for manufacturing a semiconductor integrated circuit | |
SG43193G (en) | Process for fabricating a semiconductor integrated circuit device having misfets | |
EP0145573A3 (en) | A method for fabricating a dielectric isolated integrated circuit device | |
EP0130847A3 (en) | Semiconductor device manufacturing method | |
HK30789A (en) | Process for manufacturing a semiconductor integrated circuit device | |
DE3165345D1 (en) | Method for manufacturing a semiconductor integrated circuit device | |
DE3377438D1 (en) | Resin-molded semiconductor devices and a process for manufacturing the same | |
GB8417046D0 (en) | Manufacturing semiconductor device | |
GB2156857B (en) | Method of manufacturing a semiconductor device | |
EP0143670A3 (en) | Process for fabricating a semiconductor device |