DE3521079C2 - - Google Patents

Info

Publication number
DE3521079C2
DE3521079C2 DE3521079A DE3521079A DE3521079C2 DE 3521079 C2 DE3521079 C2 DE 3521079C2 DE 3521079 A DE3521079 A DE 3521079A DE 3521079 A DE3521079 A DE 3521079A DE 3521079 C2 DE3521079 C2 DE 3521079C2
Authority
DE
Germany
Prior art keywords
section
control electrode
thyristor
diode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3521079A
Other languages
German (de)
English (en)
Other versions
DE3521079A1 (de
Inventor
Takashi Kawasaki Jp Shinohe
Katsuhiko Takigami
Hiromichi Yokohama Jp Ohashi
Tsuneo Kamakura Kanagawa Jp Ogura
Masayuki Miura Kanagawa Jp Asaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59120361A external-priority patent/JPS60263464A/ja
Priority claimed from JP59265776A external-priority patent/JPS61144065A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3521079A1 publication Critical patent/DE3521079A1/de
Application granted granted Critical
Publication of DE3521079C2 publication Critical patent/DE3521079C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/291—Gate electrodes for thyristors

Landscapes

  • Thyristors (AREA)
DE19853521079 1984-06-12 1985-06-12 Rueckwaerts leitende vollsteuergate-thyristoranordnung Granted DE3521079A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59120361A JPS60263464A (ja) 1984-06-12 1984-06-12 逆導通ゲ−トタ−ンオフサイリスタ装置
JP59265776A JPS61144065A (ja) 1984-12-17 1984-12-17 逆導通ゲ−トタ−ンオフサイリスタ

Publications (2)

Publication Number Publication Date
DE3521079A1 DE3521079A1 (de) 1985-12-12
DE3521079C2 true DE3521079C2 (en, 2012) 1993-04-01

Family

ID=26457965

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853521079 Granted DE3521079A1 (de) 1984-06-12 1985-06-12 Rueckwaerts leitende vollsteuergate-thyristoranordnung

Country Status (2)

Country Link
US (1) US4791470A (en, 2012)
DE (1) DE3521079A1 (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4403431A1 (de) * 1994-02-04 1995-08-10 Abb Management Ag Abschaltbares Halbleiterbauelement
DE19844698C1 (de) * 1998-09-29 2000-05-31 Siemens Ag Rückwärtsleitender Gate Turn Off-Thyristor

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2586141B1 (fr) * 1985-08-06 1987-11-20 Thomson Csf Thyristor sensible a decouplage gachette-cathode integre
DE3542570A1 (de) * 1985-12-02 1987-06-04 Siemens Ag Gate-turnoff-thyristor mit integrierter antiparalleler diode
JPH02202061A (ja) * 1989-01-31 1990-08-10 Mitsubishi Electric Corp 逆導通ゲートターンオフサイリスタ
GB8914554D0 (en) * 1989-06-24 1989-08-16 Lucas Ind Plc Semiconductor device
JP2547468B2 (ja) * 1990-06-12 1996-10-23 三菱電機株式会社 半導体装置およびその製造方法
US5281847A (en) * 1990-06-12 1994-01-25 Mitsubishi Denki Kabushik Kaisha Groove structure for isolating elements comprising a GTO structure
JPH05152574A (ja) * 1991-11-29 1993-06-18 Fuji Electric Co Ltd 半導体装置
JPH05343662A (ja) * 1992-06-04 1993-12-24 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2796057B2 (ja) * 1993-03-25 1998-09-10 三菱電機株式会社 逆導通ゲートターンオフサイリスタ
US5835985A (en) * 1993-09-14 1998-11-10 Kabushiki Kaisha Toshiba Reverse conducting gate-turnoff thyristor
FR2734429B1 (fr) * 1995-05-19 1997-08-01 Sgs Thomson Microelectronics Module interrupteur et d'alimentation-application au demarrage d'un tube fluorescent
DE19640656A1 (de) * 1996-10-02 1998-04-09 Asea Brown Boveri Rückwärtsleitender GTO
WO2000016405A1 (en) * 1998-09-10 2000-03-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for driving the same
DE69841124D1 (de) 1998-11-11 2009-10-15 Mitsubishi Electric Corp Rückwärtsleitender thyristor, halbleiteranordnung mit mechanischem kontakt und halbleitersubstrat
JP4416288B2 (ja) * 2000-07-27 2010-02-17 三菱電機株式会社 逆導通サイリスタ
JP4292747B2 (ja) * 2002-02-25 2009-07-08 富士ゼロックス株式会社 発光サイリスタおよび自己走査型発光素子アレイ
WO2015078657A1 (en) * 2013-11-29 2015-06-04 Abb Technology Ag Reverse-conducting power semiconductor device

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879744A (en) * 1971-07-06 1975-04-22 Silec Semi Conducteurs Bidirectional thyristor
JPS4918279A (en, 2012) * 1972-06-08 1974-02-18
US4083063A (en) * 1973-10-09 1978-04-04 General Electric Company Gate turnoff thyristor with a pilot scr
JPS5138985A (ja) * 1974-09-30 1976-03-31 Hitachi Ltd Gyakudotsugatataanofusairisuta
US4040170A (en) * 1975-05-27 1977-08-09 Westinghouse Electric Corporation Integrated gate assisted turn-off, amplifying gate thyristor, and a method for making the same
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
US4054893A (en) * 1975-12-29 1977-10-18 Hutson Jearld L Semiconductor switching devices utilizing nonohmic current paths across P-N junctions
JPS592382B2 (ja) * 1976-12-28 1984-01-18 三菱電機株式会社 逆導通サイリスタ
JPS592189B2 (ja) * 1976-12-28 1984-01-17 三菱電機株式会社 逆導通サイリスタ
JPS596071B2 (ja) * 1976-12-28 1984-02-08 三菱電機株式会社 逆導通サイリスタ
JPS592381B2 (ja) * 1976-12-28 1984-01-18 三菱電機株式会社 逆導通サイリスタ
JPS53110386A (en) * 1977-03-08 1978-09-27 Toshiba Corp Semiconductor device
DE2733060C2 (de) * 1977-07-21 1982-04-08 Mitsubishi Denki K.K., Tokyo Abschaltbarer Thyristor
JPS5453972A (en) * 1977-10-07 1979-04-27 Nec Corp Reverse conducting thyristor
JPS5596678A (en) * 1979-01-18 1980-07-23 Toyo Electric Mfg Co Ltd Reverse conducting thyristor
DE3019883A1 (de) * 1980-05-23 1981-12-03 Siemens AG, 1000 Berlin und 8000 München Zweirichtungsthyristor
DE3109892A1 (de) * 1981-03-14 1982-09-23 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Rueckwaerts nicht sperrender thyristor mit kurzer freiwerdezeit
SE431381B (sv) * 1982-06-03 1984-01-30 Asea Ab Tvapoligt overstromsskydd
SE435436B (sv) * 1983-02-16 1984-09-24 Asea Ab Tvapoligt overstromsskydd
JPH05138985A (ja) * 1991-11-20 1993-06-08 Brother Ind Ltd プリンタ等におけるヒータ制御装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4403431A1 (de) * 1994-02-04 1995-08-10 Abb Management Ag Abschaltbares Halbleiterbauelement
DE19844698C1 (de) * 1998-09-29 2000-05-31 Siemens Ag Rückwärtsleitender Gate Turn Off-Thyristor

Also Published As

Publication number Publication date
US4791470A (en) 1988-12-13
DE3521079A1 (de) 1985-12-12

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee