DE3515013C2 - - Google Patents
Info
- Publication number
- DE3515013C2 DE3515013C2 DE3515013A DE3515013A DE3515013C2 DE 3515013 C2 DE3515013 C2 DE 3515013C2 DE 3515013 A DE3515013 A DE 3515013A DE 3515013 A DE3515013 A DE 3515013A DE 3515013 C2 DE3515013 C2 DE 3515013C2
- Authority
- DE
- Germany
- Prior art keywords
- solid
- image sensor
- state image
- gate
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 53
- 238000009792 diffusion process Methods 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 30
- 230000002093 peripheral effect Effects 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000005036 potential barrier Methods 0.000 claims description 9
- 230000006698 induction Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims 6
- 238000009413 insulation Methods 0.000 description 16
- 238000000206 photolithography Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000002955 isolation Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- YBJHBAHKTGYVGT-ZKWXMUAHSA-N (+)-Biotin Chemical compound N1C(=O)N[C@@H]2[C@H](CCCCC(=O)O)SC[C@@H]21 YBJHBAHKTGYVGT-ZKWXMUAHSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- FEPMHVLSLDOMQC-UHFFFAOYSA-N virginiamycin-S1 Natural products CC1OC(=O)C(C=2C=CC=CC=2)NC(=O)C2CC(=O)CCN2C(=O)C(CC=2C=CC=CC=2)N(C)C(=O)C2CCCN2C(=O)C(CC)NC(=O)C1NC(=O)C1=NC=CC=C1O FEPMHVLSLDOMQC-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59085904A JPS60229368A (ja) | 1984-04-27 | 1984-04-27 | 固体撮像装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3515013A1 DE3515013A1 (de) | 1985-11-07 |
| DE3515013C2 true DE3515013C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-07-27 |
Family
ID=13871830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19853515013 Granted DE3515013A1 (de) | 1984-04-27 | 1985-04-25 | Festkoerper-bildsensor |
Country Status (3)
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6312161A (ja) * | 1986-07-03 | 1988-01-19 | Olympus Optical Co Ltd | 半導体撮像装置 |
| JPS6442992A (en) * | 1987-08-08 | 1989-02-15 | Olympus Optical Co | Solid-state image pickup device |
| KR910006705B1 (ko) * | 1988-11-17 | 1991-08-31 | 삼성전자 주식회사 | 발광다이오드 어레이 및 그 제조방법 |
| SG63628A1 (en) * | 1990-03-02 | 1999-03-30 | Sony Corp | Solid state image sensor |
| KR100223826B1 (ko) * | 1997-06-04 | 1999-10-15 | 구본준 | 씨씨디(ccd) 영상소자의 제조방법 |
| JP3403062B2 (ja) * | 1998-03-31 | 2003-05-06 | 株式会社東芝 | 固体撮像装置 |
| US6091093A (en) | 1999-06-01 | 2000-07-18 | Intel Corporation | Photodiode having transparent insulating film around gate islands above p-n junction |
| US6580106B2 (en) * | 2001-01-12 | 2003-06-17 | Isetex. Inc | CMOS image sensor with complete pixel reset without kTC noise generation |
| US6965102B1 (en) * | 2002-04-05 | 2005-11-15 | Foveon, Inc. | Large dynamic range, low-leakage vertical color pixel sensor |
| DE102013110695A1 (de) | 2012-10-02 | 2014-04-03 | Samsung Electronics Co., Ltd. | Bildsensor, Verfahren zum Betreiben desselben und Bildverarbeitungssystem mit demselben |
| EP3602109B1 (en) | 2017-03-19 | 2021-01-20 | Kovilta Oy | Systems and methods for modulated image capture |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4427990A (en) * | 1978-07-14 | 1984-01-24 | Zaidan Hojin Handotai Kenkyu Shinkokai | Semiconductor photo-electric converter with insulated gate over p-n charge storage region |
| JPS55124259A (en) * | 1979-03-19 | 1980-09-25 | Semiconductor Res Found | Semiconductor device |
| US4364167A (en) * | 1979-11-28 | 1982-12-21 | General Motors Corporation | Programming an IGFET read-only-memory |
| JPS5688363A (en) * | 1979-12-20 | 1981-07-17 | Nec Corp | Field effect transistor |
| JPS5754361A (en) * | 1980-09-19 | 1982-03-31 | Nec Corp | Cmos logic circuit device |
| JPS58105672A (ja) * | 1981-12-17 | 1983-06-23 | Fuji Photo Film Co Ltd | 半導体撮像装置 |
| JPH0666446B2 (ja) * | 1984-03-29 | 1994-08-24 | オリンパス光学工業株式会社 | 固体撮像素子 |
-
1984
- 1984-04-27 JP JP59085904A patent/JPS60229368A/ja active Granted
-
1985
- 1985-03-08 US US06/709,804 patent/US4677453A/en not_active Expired - Lifetime
- 1985-04-25 DE DE19853515013 patent/DE3515013A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60229368A (ja) | 1985-11-14 |
| JPH0582746B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-11-22 |
| US4677453A (en) | 1987-06-30 |
| DE3515013A1 (de) | 1985-11-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |