JPS5754361A - Cmos logic circuit device - Google Patents

Cmos logic circuit device

Info

Publication number
JPS5754361A
JPS5754361A JP55130492A JP13049280A JPS5754361A JP S5754361 A JPS5754361 A JP S5754361A JP 55130492 A JP55130492 A JP 55130492A JP 13049280 A JP13049280 A JP 13049280A JP S5754361 A JPS5754361 A JP S5754361A
Authority
JP
Japan
Prior art keywords
oxide film
logic circuit
layer
cmos logic
reduced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55130492A
Other languages
Japanese (ja)
Other versions
JPS6130432B2 (en
Inventor
Kunimitsu Fujiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55130492A priority Critical patent/JPS5754361A/en
Publication of JPS5754361A publication Critical patent/JPS5754361A/en
Publication of JPS6130432B2 publication Critical patent/JPS6130432B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To reduce the occupancy area on the subject device by a method wherein the connecting wires between elements are reduced in the CMOS logic circuit which is integrated on a semiconductor chip. CONSTITUTION:A P type Si layer 2 is epitaxially formed on a substrate 1 and an insulating isolating layer 3 reaching the substrate 1 is formed by performing a selective oxidation using a nitriding Si film. Then, an N<+> diffusion layers 4a and 4b are formed in a P type Si layer 2 and the surface of the diffusion layers is covered by a thick oxide film. Subsequently, the oxide film 5 located in the central part is removed, a thin oxide film is provided and a nitriding Si layer 7, which will be used as a master slice, is provided on a part of the thin oxide film. Accordingly, as the CMOS element is constructed in a chip, the connecting wirings between elements are reduced and the CMOS logic circuit device having a reduced occupancy area can be obtained.
JP55130492A 1980-09-19 1980-09-19 Cmos logic circuit device Granted JPS5754361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55130492A JPS5754361A (en) 1980-09-19 1980-09-19 Cmos logic circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55130492A JPS5754361A (en) 1980-09-19 1980-09-19 Cmos logic circuit device

Publications (2)

Publication Number Publication Date
JPS5754361A true JPS5754361A (en) 1982-03-31
JPS6130432B2 JPS6130432B2 (en) 1986-07-14

Family

ID=15035551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55130492A Granted JPS5754361A (en) 1980-09-19 1980-09-19 Cmos logic circuit device

Country Status (1)

Country Link
JP (1) JPS5754361A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4677453A (en) * 1984-04-27 1987-06-30 Olympus Optical Co., Ltd. Solid state image sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4677453A (en) * 1984-04-27 1987-06-30 Olympus Optical Co., Ltd. Solid state image sensor

Also Published As

Publication number Publication date
JPS6130432B2 (en) 1986-07-14

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