DE3503709A1 - Verfahren zur befestigung einer einsatzelektrodenplatte in eine druckgebondete halbleitereinrichtung - Google Patents

Verfahren zur befestigung einer einsatzelektrodenplatte in eine druckgebondete halbleitereinrichtung

Info

Publication number
DE3503709A1
DE3503709A1 DE19853503709 DE3503709A DE3503709A1 DE 3503709 A1 DE3503709 A1 DE 3503709A1 DE 19853503709 DE19853503709 DE 19853503709 DE 3503709 A DE3503709 A DE 3503709A DE 3503709 A1 DE3503709 A1 DE 3503709A1
Authority
DE
Germany
Prior art keywords
pattern
electrode plate
semiconductor element
insert
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19853503709
Other languages
German (de)
English (en)
Other versions
DE3503709C2 (https=
Inventor
Masaaki Itami Hyogo Sadamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3503709A1 publication Critical patent/DE3503709A1/de
Application granted granted Critical
Publication of DE3503709C2 publication Critical patent/DE3503709C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49133—Assembling to base an electrical component, e.g., capacitor, etc. with component orienting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/5313—Means to assemble electrical device
    • Y10T29/53261—Means to align and advance work part

Landscapes

  • Thyristors (AREA)
  • Die Bonding (AREA)
DE19853503709 1984-02-23 1985-02-04 Verfahren zur befestigung einer einsatzelektrodenplatte in eine druckgebondete halbleitereinrichtung Granted DE3503709A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59034531A JPS60177674A (ja) 1984-02-23 1984-02-23 圧接形半導体装置の插入電極板の固定方法

Publications (2)

Publication Number Publication Date
DE3503709A1 true DE3503709A1 (de) 1985-08-29
DE3503709C2 DE3503709C2 (https=) 1989-02-16

Family

ID=12416853

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853503709 Granted DE3503709A1 (de) 1984-02-23 1985-02-04 Verfahren zur befestigung einer einsatzelektrodenplatte in eine druckgebondete halbleitereinrichtung

Country Status (3)

Country Link
US (1) US4559697A (https=)
JP (1) JPS60177674A (https=)
DE (1) DE3503709A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8909244U1 (de) * 1989-07-31 1989-09-21 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2215125B (en) * 1988-02-22 1991-04-24 Mitsubishi Electric Corp Semiconductor device
US6472740B1 (en) * 2001-05-30 2002-10-29 International Business Machines Corporation Self-supporting air bridge interconnect structure for integrated circuits
US6856075B1 (en) * 2001-06-22 2005-02-15 Hutchinson Technology Incorporated Enhancements for adhesive attachment of piezoelectric motor elements to a disk drive suspension

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1514562A1 (de) * 1965-09-07 1969-10-16 Semikron Gleichrichterbau Vorrichtung zur Kontaktierung eines Halbleiter-Bauelementes mit segmentierter Kathode
DE2013742A1 (de) * 1969-03-21 1970-10-15 General Electric Company, Schenectady, N.Y. (V.St.A.) Gesteuerter Gleichrichter
DE2115954A1 (de) * 1971-04-01 1972-10-12 Gen Electric Halbleiterschalter
DE1539111B2 (de) * 1965-03-01 1973-12-06 Westinghouse Electric Corp., Pittsburgh, Pa. (V.St.A.) Halbleiterbauelement
DE2332574A1 (de) * 1972-06-28 1974-01-10 Westinghouse Brake Semi Conduc Verfahren zur herstellung eines halbleiters und halbleitervorrichtung
CH582425A5 (https=) * 1973-06-19 1976-11-30 Westinghouse Electric Corp
DE2902224A1 (de) * 1979-01-20 1980-07-24 Bbc Brown Boveri & Cie Kontaktsystem fuer leistungs-halbleiterbauelemente
EP0022359A1 (en) * 1979-07-04 1981-01-14 Westinghouse Brake And Signal Company Limited Semiconductor contact shim, attachment method and semiconductor device including a contact shim

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040170A (en) * 1975-05-27 1977-08-09 Westinghouse Electric Corporation Integrated gate assisted turn-off, amplifying gate thyristor, and a method for making the same
US4352118A (en) * 1979-03-02 1982-09-28 Electric Power Research Institute, Inc. Thyristor with segmented turn-on line for directing turn-on current
JPS5871657A (ja) * 1981-10-23 1983-04-28 Toshiba Corp ゲ−トタ−ンオフサイリスタ

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1539111B2 (de) * 1965-03-01 1973-12-06 Westinghouse Electric Corp., Pittsburgh, Pa. (V.St.A.) Halbleiterbauelement
DE1514562A1 (de) * 1965-09-07 1969-10-16 Semikron Gleichrichterbau Vorrichtung zur Kontaktierung eines Halbleiter-Bauelementes mit segmentierter Kathode
DE2013742A1 (de) * 1969-03-21 1970-10-15 General Electric Company, Schenectady, N.Y. (V.St.A.) Gesteuerter Gleichrichter
DE2115954A1 (de) * 1971-04-01 1972-10-12 Gen Electric Halbleiterschalter
DE2332574A1 (de) * 1972-06-28 1974-01-10 Westinghouse Brake Semi Conduc Verfahren zur herstellung eines halbleiters und halbleitervorrichtung
CH582425A5 (https=) * 1973-06-19 1976-11-30 Westinghouse Electric Corp
DE2902224A1 (de) * 1979-01-20 1980-07-24 Bbc Brown Boveri & Cie Kontaktsystem fuer leistungs-halbleiterbauelemente
EP0014761A1 (de) * 1979-01-20 1980-09-03 BROWN, BOVERI & CIE Aktiengesellschaft Mannheim Kontaktsystem für Leistungs-Thyristor
EP0022359A1 (en) * 1979-07-04 1981-01-14 Westinghouse Brake And Signal Company Limited Semiconductor contact shim, attachment method and semiconductor device including a contact shim

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8909244U1 (de) * 1989-07-31 1989-09-21 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement

Also Published As

Publication number Publication date
DE3503709C2 (https=) 1989-02-16
JPS60177674A (ja) 1985-09-11
US4559697A (en) 1985-12-24

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee