DE3486284D1 - Sichtbarmachungs/Infrarot-Bildgerät mit einer Stapelzellenstruktur. - Google Patents

Sichtbarmachungs/Infrarot-Bildgerät mit einer Stapelzellenstruktur.

Info

Publication number
DE3486284D1
DE3486284D1 DE84308776T DE3486284T DE3486284D1 DE 3486284 D1 DE3486284 D1 DE 3486284D1 DE 84308776 T DE84308776 T DE 84308776T DE 3486284 T DE3486284 T DE 3486284T DE 3486284 D1 DE3486284 D1 DE 3486284D1
Authority
DE
Germany
Prior art keywords
visualization
imaging device
cell structure
infrared imaging
stacked cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE84308776T
Other languages
English (en)
Other versions
DE3486284T2 (de
Inventor
Nozomu C O Patent Divis Harada
Okio C O Patent Divisi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3486284D1 publication Critical patent/DE3486284D1/de
Publication of DE3486284T2 publication Critical patent/DE3486284T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14618Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14806Structural or functional details thereof
    • H01L27/14812Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14831Area CCD imagers
    • H01L27/14843Interline transfer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14868CCD or CID colour imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14875Infrared CCD or CID imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14893Charge coupled imagers comprising a photoconductive layer deposited on the CCD structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE3486284T 1983-12-19 1984-12-14 Sichtbarmachungs/Infrarot-Bildgerät mit einer Stapelzellenstruktur. Expired - Fee Related DE3486284T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58239382A JPS60130274A (ja) 1983-12-19 1983-12-19 固体撮像装置

Publications (2)

Publication Number Publication Date
DE3486284D1 true DE3486284D1 (de) 1994-04-07
DE3486284T2 DE3486284T2 (de) 1994-06-09

Family

ID=17043948

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3486284T Expired - Fee Related DE3486284T2 (de) 1983-12-19 1984-12-14 Sichtbarmachungs/Infrarot-Bildgerät mit einer Stapelzellenstruktur.

Country Status (4)

Country Link
US (1) US4651001A (de)
EP (1) EP0146375B1 (de)
JP (1) JPS60130274A (de)
DE (1) DE3486284T2 (de)

Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4724323A (en) * 1984-10-04 1988-02-09 Canon Kabushiki Kaisha Image line sensor unit, photosensors for use in the sensor unit and method of making the photosensors
US4845731A (en) * 1985-06-05 1989-07-04 Picker International Radiation data acquistion
DE3626504C2 (de) * 1985-08-07 1996-06-27 Sharp Kk Verfahren zur Herstellung eines linearen Bildsensors
US4926052A (en) * 1986-03-03 1990-05-15 Kabushiki Kaisha Toshiba Radiation detecting device
DE3640946C1 (de) * 1986-11-29 1988-04-07 Eltro Gmbh Wuerfelfoermige Warnvorrichtung fuer Laserstrahlung
US4939369A (en) * 1988-10-04 1990-07-03 Loral Fairchild Corporation Imaging and tracking sensor designed with a sandwich structure
US4948976A (en) * 1989-02-09 1990-08-14 Servo Corporation Of America Multi-wavelength band infrared detector
GB2228824A (en) * 1989-03-01 1990-09-05 Gen Electric Co Plc Radiation detectors
US5065185A (en) * 1989-08-21 1991-11-12 Powers Edward A Multi-function detecting device for a document reproduction machine
US5034608A (en) * 1989-09-08 1991-07-23 Massachusetts Institute Of Technology Infrared sensor operable without cooling
JP3117138B2 (ja) * 1989-09-13 2000-12-11 オリンパス光学工業株式会社 電子スチルカメラとその撮像記録素子
JP2617798B2 (ja) * 1989-09-22 1997-06-04 三菱電機株式会社 積層型半導体装置およびその製造方法
JPH053337A (ja) * 1990-11-28 1993-01-08 Hitachi Ltd 半導体放射線検出装置及び半導体放射線検出器並びにその製造方法
US5459321A (en) * 1990-12-26 1995-10-17 The United States Of America As Represented By The Secretary Of The Navy Laser hardened backside illuminated optical detector
US5134488A (en) * 1990-12-28 1992-07-28 David Sarnoff Research Center, Inc. X-Y addressable imager with variable integration
US5134489A (en) * 1990-12-28 1992-07-28 David Sarnoff Research Center, Inc. X-Y addressable solid state imager for low noise operation
US5120960A (en) * 1991-04-25 1992-06-09 Westinghouse Electric Corp. Infrared image detecting device and method
CA2070708C (en) * 1991-08-08 1997-04-29 Ichiro Kasai Visible and infrared indium antimonide (insb) photodetector with non-flashing light receiving surface
US6150930A (en) * 1992-08-14 2000-11-21 Texas Instruments Incorporated Video equipment and method to assist motor vehicle operators
US5401973A (en) * 1992-12-04 1995-03-28 Atomic Energy Of Canada Limited Industrial material processing electron linear accelerator
JP2500428B2 (ja) * 1993-04-06 1996-05-29 日本電気株式会社 イメ―ジセンサおよびその駆動方法
FR2713017B1 (fr) * 1993-11-23 1996-01-12 Commissariat Energie Atomique Détecteur de rayonnements dans deux bandes de longueurs d'ondes et procédé de fabrication de ce détecteur.
US5389775A (en) * 1993-12-03 1995-02-14 General Electric Company Imager assembly with multiple common electrode contacts
EP0778983B1 (de) * 1994-07-27 2000-05-31 1294339 Ontario, Inc. Bildwandlersystem
US5525793A (en) * 1994-10-07 1996-06-11 Santa Barbara Instrument Group Optical head having an imaging sensor for imaging an object in a field of view and a tracking sensor for tracking a star off axis to the field of view of the imaging sensor
US5508512A (en) * 1995-01-24 1996-04-16 Esm International Inc. Sorting machine using dual frequency optical detectors
US5555464A (en) * 1995-07-28 1996-09-10 Lockheed Martin Corporation Red/near-infrared filtering for CCD cameras
FR3026562A1 (fr) * 1995-08-30 2016-04-01 Commissariat Energie Atomique Detecteur infrarouge mulispectral.
US5811815A (en) * 1995-11-15 1998-09-22 Lockheed-Martin Ir Imaging Systems, Inc. Dual-band multi-level microbridge detector
US5760398A (en) * 1995-12-04 1998-06-02 Lockheed Martin Ir Imaging Systems, Inc. Infrared radiation detector having a reduced active area
US7495220B2 (en) * 1995-10-24 2009-02-24 Bae Systems Information And Electronics Systems Integration Inc. Uncooled infrared sensor
US5818051A (en) * 1996-04-04 1998-10-06 Raytheon Ti Systems, Inc. Multiple color infrared detector
US5892222A (en) * 1996-04-18 1999-04-06 Loral Fairchild Corporation Broadband multicolor photon counter for low light detection and imaging
US5818052A (en) * 1996-04-18 1998-10-06 Loral Fairchild Corp. Low light level solid state image sensor
CN1221488A (zh) * 1996-05-10 1999-06-30 应用科学模拟公司 亮度优先彩色检测器
US6097031A (en) * 1997-07-25 2000-08-01 Honeywell Inc. Dual bandwith bolometer
US5965875A (en) * 1998-04-24 1999-10-12 Foveon, Inc. Color separation in an active pixel cell imaging array using a triple-well structure
US6606120B1 (en) 1998-04-24 2003-08-12 Foveon, Inc. Multiple storage node full color active pixel sensors
US6410899B1 (en) 1998-06-17 2002-06-25 Foveon, Inc. Active pixel sensor with bootstrap amplification and reduced leakage during readout
FR2781927B1 (fr) * 1998-07-28 2001-10-05 Commissariat Energie Atomique Dispositif de detection de rayonnements multispectraux infrarouge/visible
US6731397B1 (en) 1999-05-21 2004-05-04 Foveon, Inc. Method for storing and retrieving digital image data from an imaging array
US6727521B2 (en) 2000-09-25 2004-04-27 Foveon, Inc. Vertical color filter detector group and array
US6697114B1 (en) 1999-08-13 2004-02-24 Foveon, Inc. Triple slope pixel sensor and arry
JP3414343B2 (ja) * 1999-11-26 2003-06-09 日本電気株式会社 イメージセンサ及びその製造方法
US6809768B1 (en) 2000-02-14 2004-10-26 Foveon, Inc. Double slope pixel sensor and array
US6882367B1 (en) 2000-02-29 2005-04-19 Foveon, Inc. High-sensitivity storage pixel sensor having auto-exposure detection
US6483116B1 (en) 2000-04-25 2002-11-19 Innovative Technology Licensing, Llc High performance ultraviolet imager for operation at room temperature
US6476374B1 (en) 2000-04-25 2002-11-05 Innovative Technology Licensing, Llc Room temperature, low-light-level visible imager
DE10052863A1 (de) * 2000-10-24 2002-04-25 Christian Pilgrim Endoskopisches Instrument zur Anwendung in Hohlräumen
DE10064580C1 (de) * 2000-12-18 2002-01-31 Infineon Technologies Ag Opto-elektronische Baugruppe zum Empfangen optischer Signale
US6898451B2 (en) * 2001-03-21 2005-05-24 Minformed, L.L.C. Non-invasive blood analyte measuring system and method utilizing optical absorption
US6960757B2 (en) * 2001-06-18 2005-11-01 Foveon, Inc. Simplified wiring schemes for vertical color filter pixel sensors
US6930336B1 (en) 2001-06-18 2005-08-16 Foveon, Inc. Vertical-color-filter detector group with trench isolation
US6864557B2 (en) * 2001-06-18 2005-03-08 Foveon, Inc. Vertical color filter detector group and array
US6590239B2 (en) * 2001-07-30 2003-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Color filter image array optoelectronic microelectronic fabrication with a planarizing layer formed upon a concave surfaced color filter region
US6998660B2 (en) * 2002-03-20 2006-02-14 Foveon, Inc. Vertical color filter sensor group array that emulates a pattern of single-layer sensors with efficient use of each sensor group's sensors
US7164444B1 (en) 2002-05-17 2007-01-16 Foveon, Inc. Vertical color filter detector group with highlight detector
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US7154157B2 (en) * 2002-12-30 2006-12-26 Intel Corporation Stacked semiconductor radiation sensors having color component and infrared sensing capability
US7339216B1 (en) 2003-01-31 2008-03-04 Foveon, Inc. Vertical color filter sensor group array with full-resolution top layer and lower-resolution lower layer
JP2004317393A (ja) * 2003-04-18 2004-11-11 Shimadzu Corp 二色放射温度計
JP4495949B2 (ja) * 2003-11-14 2010-07-07 富士フイルム株式会社 2板式カラー固体撮像装置及びデジタルカメラ
FR2884352B1 (fr) * 2005-04-11 2007-09-28 Valeo Vision Sa Capteur photosensible et applications dans le domaine automobile
US7435962B2 (en) * 2005-05-18 2008-10-14 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Imaging device and method for producing an infrared filtered digital image
JP2007336362A (ja) * 2006-06-16 2007-12-27 Fujifilm Corp 情報読み取り装置
US7737394B2 (en) * 2006-08-31 2010-06-15 Micron Technology, Inc. Ambient infrared detection in solid state sensors
US7435943B1 (en) * 2007-03-29 2008-10-14 Avago Technologies Ecbu Ip Pte Ltd Color sensor with infrared correction having a filter layer blocking a portion of light of visible spectrum
TW200843063A (en) * 2007-04-16 2008-11-01 Phoenix Prec Technology Corp Structure of semiconductor chip and package structure having semiconductor chip embedded therein
US7602430B1 (en) 2007-04-18 2009-10-13 Foveon, Inc. High-gain multicolor pixel sensor with reset noise cancellation
CN101345248B (zh) * 2007-07-09 2010-07-14 博立码杰通讯(深圳)有限公司 多光谱感光器件及其制作方法
JP5075512B2 (ja) * 2007-07-23 2012-11-21 富士フイルム株式会社 固体撮像素子及び固体撮像素子の製造方法
US8259203B2 (en) * 2007-12-05 2012-09-04 Electro Scientific Industries, Inc. Method and apparatus for achieving panchromatic response from a color-mosaic imager
US20090159799A1 (en) * 2007-12-19 2009-06-25 Spectral Instruments, Inc. Color infrared light sensor, camera, and method for capturing images
US7745773B1 (en) 2008-04-11 2010-06-29 Foveon, Inc. Multi-color CMOS pixel sensor with shared row wiring and dual output lines
KR101475464B1 (ko) * 2008-05-09 2014-12-22 삼성전자 주식회사 적층형 이미지 센서
US7883916B2 (en) * 2008-05-30 2011-02-08 International Business Machines Corporation Optical sensor including stacked photosensitive diodes
US7893468B2 (en) * 2008-05-30 2011-02-22 International Business Machines Corporation Optical sensor including stacked photodiodes
US7915652B2 (en) * 2008-10-24 2011-03-29 Sharp Laboratories Of America, Inc. Integrated infrared and color CMOS imager sensor
US20100102229A1 (en) * 2008-10-28 2010-04-29 Sony Ericsson Mobile Communications Ab Combined sensor for portable communication devices
JP5353200B2 (ja) * 2008-11-20 2013-11-27 ソニー株式会社 固体撮像装置および撮像装置
US20100157117A1 (en) * 2008-12-18 2010-06-24 Yu Wang Vertical stack of image sensors with cutoff color filters
FR2941329B1 (fr) * 2009-01-19 2011-03-04 Ulis Detecteur bispectral.
US8355868B2 (en) * 2009-09-30 2013-01-15 Ge Aviation Systems Llc Method and system for spectral image celestial navigation
US9136301B2 (en) * 2009-11-12 2015-09-15 Maxchip Electronics Corp. Multi-wave band light sensor combined with function of IR sensing and method of fabricating the same
US8384559B2 (en) 2010-04-13 2013-02-26 Silicon Laboratories Inc. Sensor device with flexible interface and updatable information store
FR2966977B1 (fr) * 2010-11-03 2016-02-26 Commissariat Energie Atomique Detecteur de rayonnement visible et proche infrarouge
FR2966978B1 (fr) 2010-11-03 2016-04-01 Commissariat Energie Atomique Detecteur de rayonnement visible et proche infrarouge
FR3031193B1 (fr) * 2014-12-30 2018-08-17 Thales Dispositif d'imagerie multi-senseurs
KR102282218B1 (ko) * 2015-01-30 2021-07-26 삼성전자주식회사 3 차원 영상 획득 장치용 결상 광학계 및 이를 포함하는 3 차원 영상 획득 장치
US20160255323A1 (en) 2015-02-26 2016-09-01 Dual Aperture International Co. Ltd. Multi-Aperture Depth Map Using Blur Kernels and Down-Sampling
DE102015109044B4 (de) * 2015-06-09 2020-10-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Bauteil zum Detektieren elektromagnetischer Strahlung
CN107438170B (zh) * 2016-05-25 2020-01-17 杭州海康威视数字技术股份有限公司 一种图像透雾方法及实现图像透雾的图像采集设备
CN108389875A (zh) 2017-02-03 2018-08-10 松下知识产权经营株式会社 摄像装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3902066A (en) * 1974-03-18 1975-08-26 Us Air Force Schottky barrier infrared detector arrays with charge coupled device readout
US3962578A (en) * 1975-02-28 1976-06-08 Aeronutronic Ford Corporation Two-color photoelectric detectors having an integral filter
US4004148A (en) * 1976-02-02 1977-01-18 General Electric Company Accumulation mode charge injection infrared sensor
US4238760A (en) * 1978-10-06 1980-12-09 Recognition Equipment Incorporated Multi-spectrum photodiode devices
US4214264A (en) * 1979-02-28 1980-07-22 Eastman Kodak Company Hybrid color image sensing array
US4316206A (en) * 1980-04-14 1982-02-16 The United States Of America As Represented By The Secretary Of The Navy Two color narrow bandwidth detector
US4443701A (en) * 1981-08-25 1984-04-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Integrating IR detector imaging systems
US4423325A (en) * 1981-09-02 1983-12-27 Honeywell Inc. Multi-spectral Schottky barrier infrared radiation detection array
US4404586A (en) * 1981-12-15 1983-09-13 Fuji Photo Film Co., Ltd. Solid-state color imager with stripe or mosaic filters
US4581625A (en) * 1983-12-19 1986-04-08 Atlantic Richfield Company Vertically integrated solid state color imager

Also Published As

Publication number Publication date
JPH0135549B2 (de) 1989-07-26
EP0146375A3 (en) 1987-04-08
DE3486284T2 (de) 1994-06-09
EP0146375A2 (de) 1985-06-26
US4651001A (en) 1987-03-17
EP0146375B1 (de) 1994-03-02
JPS60130274A (ja) 1985-07-11

Similar Documents

Publication Publication Date Title
DE3486284D1 (de) Sichtbarmachungs/Infrarot-Bildgerät mit einer Stapelzellenstruktur.
DE3484955D1 (de) Halbleiterspeicher mit einer stapelstruktur.
DE3382351D1 (de) Geraet mit einer phasengesteuerten wandlerreihe.
DE3485595D1 (de) Halbleiterspeicher mit einer speicherstruktur mit vielfachen pegeln.
DE3530778C2 (de) Endoskop mit einer festkoerper-bildaufnahmevorrichtung
AU564399B2 (en) Photo thermographic elements with barrier layers
IL52066A0 (en) Photovoltaic system including a lens structure
DE3280177D1 (de) Polymerzusammensetzung mit einer mehrschichtigen struktur.
DE68901675D1 (de) Behaeltnis mit einer luftbefeuchtungseinrichtung.
DE3678050D1 (de) Hoergeraet mit einer schwenkbaren klappe.
DE3687332D1 (de) Ueberwachungssystem in einer uebertragungsanlage.
DE3484667D1 (de) Mit einer ladungsgekoppelten vorrichtung arbeitender sterndetektor.
DE3676414D1 (de) Siebeinrichtung mit staeben.
DE3751311T2 (de) Flüssigkristallvorrichtung mit einer Ladungs-Speicherstruktur.
DE2815212A1 (de) Membrananordnung mit einer bewegungsmembran
FR2485658B1 (fr) Porte-mousqueton a verrouillage automatique
DE3483910D1 (de) Filter mit integralstruktur.
DE3778044D1 (de) Kassettenladegeraet mit seitenplatten.
DD136124A5 (de) Kuehlcontainerschiff mit einer kuehlanlage
DE3670927D1 (de) Bildaufnahmeanordnungen mit photovoltaischen detektorelementen.
DE2917096A1 (de) Luftfahrzeug mit einer sensoreinrichtung
DE3482996D1 (de) Stellglied mit einer schrittbewegungsfunktion.
DE3671327D1 (de) Bildaufnahmeanordnungen mit photovoltaischen detektorelementen.
DE3381366D1 (de) Halbleiteranordnung mit einer mehrschichtstruktur.
DE3481648D1 (de) Fotografisches rollenkopiergeraet mit einer einfaedelvorrichtung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee