DE3486284D1 - Sichtbarmachungs/Infrarot-Bildgerät mit einer Stapelzellenstruktur. - Google Patents
Sichtbarmachungs/Infrarot-Bildgerät mit einer Stapelzellenstruktur.Info
- Publication number
- DE3486284D1 DE3486284D1 DE84308776T DE3486284T DE3486284D1 DE 3486284 D1 DE3486284 D1 DE 3486284D1 DE 84308776 T DE84308776 T DE 84308776T DE 3486284 T DE3486284 T DE 3486284T DE 3486284 D1 DE3486284 D1 DE 3486284D1
- Authority
- DE
- Germany
- Prior art keywords
- visualization
- imaging device
- cell structure
- infrared imaging
- stacked cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003331 infrared imaging Methods 0.000 title 1
- 238000012800 visualization Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
- H01L27/14843—Interline transfer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14868—CCD or CID colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14893—Charge coupled imagers comprising a photoconductive layer deposited on the CCD structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58239382A JPS60130274A (ja) | 1983-12-19 | 1983-12-19 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3486284D1 true DE3486284D1 (de) | 1994-04-07 |
DE3486284T2 DE3486284T2 (de) | 1994-06-09 |
Family
ID=17043948
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3486284T Expired - Fee Related DE3486284T2 (de) | 1983-12-19 | 1984-12-14 | Sichtbarmachungs/Infrarot-Bildgerät mit einer Stapelzellenstruktur. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4651001A (de) |
EP (1) | EP0146375B1 (de) |
JP (1) | JPS60130274A (de) |
DE (1) | DE3486284T2 (de) |
Families Citing this family (94)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4724323A (en) * | 1984-10-04 | 1988-02-09 | Canon Kabushiki Kaisha | Image line sensor unit, photosensors for use in the sensor unit and method of making the photosensors |
US4845731A (en) * | 1985-06-05 | 1989-07-04 | Picker International | Radiation data acquistion |
DE3626504C2 (de) * | 1985-08-07 | 1996-06-27 | Sharp Kk | Verfahren zur Herstellung eines linearen Bildsensors |
DE3768112D1 (de) * | 1986-03-03 | 1991-04-04 | Toshiba Kawasaki Kk | Strahlungsdetektor. |
DE3640946C1 (de) * | 1986-11-29 | 1988-04-07 | Eltro Gmbh | Wuerfelfoermige Warnvorrichtung fuer Laserstrahlung |
US4939369A (en) * | 1988-10-04 | 1990-07-03 | Loral Fairchild Corporation | Imaging and tracking sensor designed with a sandwich structure |
US4948976A (en) * | 1989-02-09 | 1990-08-14 | Servo Corporation Of America | Multi-wavelength band infrared detector |
GB2228824A (en) * | 1989-03-01 | 1990-09-05 | Gen Electric Co Plc | Radiation detectors |
US5065185A (en) * | 1989-08-21 | 1991-11-12 | Powers Edward A | Multi-function detecting device for a document reproduction machine |
US5034608A (en) * | 1989-09-08 | 1991-07-23 | Massachusetts Institute Of Technology | Infrared sensor operable without cooling |
JP3117138B2 (ja) * | 1989-09-13 | 2000-12-11 | オリンパス光学工業株式会社 | 電子スチルカメラとその撮像記録素子 |
JP2617798B2 (ja) * | 1989-09-22 | 1997-06-04 | 三菱電機株式会社 | 積層型半導体装置およびその製造方法 |
JPH053337A (ja) * | 1990-11-28 | 1993-01-08 | Hitachi Ltd | 半導体放射線検出装置及び半導体放射線検出器並びにその製造方法 |
US5459321A (en) * | 1990-12-26 | 1995-10-17 | The United States Of America As Represented By The Secretary Of The Navy | Laser hardened backside illuminated optical detector |
US5134488A (en) * | 1990-12-28 | 1992-07-28 | David Sarnoff Research Center, Inc. | X-Y addressable imager with variable integration |
US5134489A (en) * | 1990-12-28 | 1992-07-28 | David Sarnoff Research Center, Inc. | X-Y addressable solid state imager for low noise operation |
US5120960A (en) * | 1991-04-25 | 1992-06-09 | Westinghouse Electric Corp. | Infrared image detecting device and method |
CA2070708C (en) * | 1991-08-08 | 1997-04-29 | Ichiro Kasai | Visible and infrared indium antimonide (insb) photodetector with non-flashing light receiving surface |
US6150930A (en) * | 1992-08-14 | 2000-11-21 | Texas Instruments Incorporated | Video equipment and method to assist motor vehicle operators |
US5401973A (en) * | 1992-12-04 | 1995-03-28 | Atomic Energy Of Canada Limited | Industrial material processing electron linear accelerator |
JP2500428B2 (ja) * | 1993-04-06 | 1996-05-29 | 日本電気株式会社 | イメ―ジセンサおよびその駆動方法 |
FR2713017B1 (fr) * | 1993-11-23 | 1996-01-12 | Commissariat Energie Atomique | Détecteur de rayonnements dans deux bandes de longueurs d'ondes et procédé de fabrication de ce détecteur. |
US5389775A (en) * | 1993-12-03 | 1995-02-14 | General Electric Company | Imager assembly with multiple common electrode contacts |
WO1996003773A1 (en) * | 1994-07-27 | 1996-02-08 | Litton Systems Canada Limited | Radiation imaging panel |
US5525793A (en) * | 1994-10-07 | 1996-06-11 | Santa Barbara Instrument Group | Optical head having an imaging sensor for imaging an object in a field of view and a tracking sensor for tracking a star off axis to the field of view of the imaging sensor |
US5508512A (en) * | 1995-01-24 | 1996-04-16 | Esm International Inc. | Sorting machine using dual frequency optical detectors |
US5555464A (en) * | 1995-07-28 | 1996-09-10 | Lockheed Martin Corporation | Red/near-infrared filtering for CCD cameras |
FR3026562A1 (fr) * | 1995-08-30 | 2016-04-01 | Commissariat Energie Atomique | Detecteur infrarouge mulispectral. |
US7495220B2 (en) * | 1995-10-24 | 2009-02-24 | Bae Systems Information And Electronics Systems Integration Inc. | Uncooled infrared sensor |
WO1997018589A1 (en) * | 1995-11-15 | 1997-05-22 | Lockheed-Martin Ir Imaging Systems, Inc. | A dual-band multi-level microbridge detector |
IL124691A (en) * | 1995-12-04 | 2001-06-14 | Lockheed Martin Ir Imaging Sys | Infrared radiation detector having a reduced active area |
US5818051A (en) * | 1996-04-04 | 1998-10-06 | Raytheon Ti Systems, Inc. | Multiple color infrared detector |
US5818052A (en) * | 1996-04-18 | 1998-10-06 | Loral Fairchild Corp. | Low light level solid state image sensor |
US5892222A (en) * | 1996-04-18 | 1999-04-06 | Loral Fairchild Corporation | Broadband multicolor photon counter for low light detection and imaging |
AU3062697A (en) * | 1996-05-10 | 1997-12-05 | Applied Science Fiction, Inc. | Luminance-priority color sensor |
US6097031A (en) * | 1997-07-25 | 2000-08-01 | Honeywell Inc. | Dual bandwith bolometer |
US5965875A (en) * | 1998-04-24 | 1999-10-12 | Foveon, Inc. | Color separation in an active pixel cell imaging array using a triple-well structure |
US6606120B1 (en) | 1998-04-24 | 2003-08-12 | Foveon, Inc. | Multiple storage node full color active pixel sensors |
US6410899B1 (en) | 1998-06-17 | 2002-06-25 | Foveon, Inc. | Active pixel sensor with bootstrap amplification and reduced leakage during readout |
FR2781927B1 (fr) | 1998-07-28 | 2001-10-05 | Commissariat Energie Atomique | Dispositif de detection de rayonnements multispectraux infrarouge/visible |
US6731397B1 (en) | 1999-05-21 | 2004-05-04 | Foveon, Inc. | Method for storing and retrieving digital image data from an imaging array |
US6727521B2 (en) * | 2000-09-25 | 2004-04-27 | Foveon, Inc. | Vertical color filter detector group and array |
US6697114B1 (en) | 1999-08-13 | 2004-02-24 | Foveon, Inc. | Triple slope pixel sensor and arry |
JP3414343B2 (ja) * | 1999-11-26 | 2003-06-09 | 日本電気株式会社 | イメージセンサ及びその製造方法 |
US6809768B1 (en) | 2000-02-14 | 2004-10-26 | Foveon, Inc. | Double slope pixel sensor and array |
US6882367B1 (en) | 2000-02-29 | 2005-04-19 | Foveon, Inc. | High-sensitivity storage pixel sensor having auto-exposure detection |
US6476374B1 (en) | 2000-04-25 | 2002-11-05 | Innovative Technology Licensing, Llc | Room temperature, low-light-level visible imager |
US6483116B1 (en) | 2000-04-25 | 2002-11-19 | Innovative Technology Licensing, Llc | High performance ultraviolet imager for operation at room temperature |
DE10052863A1 (de) * | 2000-10-24 | 2002-04-25 | Christian Pilgrim | Endoskopisches Instrument zur Anwendung in Hohlräumen |
DE10064580C1 (de) * | 2000-12-18 | 2002-01-31 | Infineon Technologies Ag | Opto-elektronische Baugruppe zum Empfangen optischer Signale |
US6898451B2 (en) * | 2001-03-21 | 2005-05-24 | Minformed, L.L.C. | Non-invasive blood analyte measuring system and method utilizing optical absorption |
US6930336B1 (en) | 2001-06-18 | 2005-08-16 | Foveon, Inc. | Vertical-color-filter detector group with trench isolation |
US6960757B2 (en) * | 2001-06-18 | 2005-11-01 | Foveon, Inc. | Simplified wiring schemes for vertical color filter pixel sensors |
US6864557B2 (en) * | 2001-06-18 | 2005-03-08 | Foveon, Inc. | Vertical color filter detector group and array |
US6590239B2 (en) * | 2001-07-30 | 2003-07-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Color filter image array optoelectronic microelectronic fabrication with a planarizing layer formed upon a concave surfaced color filter region |
US6998660B2 (en) * | 2002-03-20 | 2006-02-14 | Foveon, Inc. | Vertical color filter sensor group array that emulates a pattern of single-layer sensors with efficient use of each sensor group's sensors |
US7164444B1 (en) | 2002-05-17 | 2007-01-16 | Foveon, Inc. | Vertical color filter detector group with highlight detector |
US7453129B2 (en) * | 2002-12-18 | 2008-11-18 | Noble Peak Vision Corp. | Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry |
US7154157B2 (en) * | 2002-12-30 | 2006-12-26 | Intel Corporation | Stacked semiconductor radiation sensors having color component and infrared sensing capability |
US7339216B1 (en) | 2003-01-31 | 2008-03-04 | Foveon, Inc. | Vertical color filter sensor group array with full-resolution top layer and lower-resolution lower layer |
JP2004317393A (ja) * | 2003-04-18 | 2004-11-11 | Shimadzu Corp | 二色放射温度計 |
JP4495949B2 (ja) * | 2003-11-14 | 2010-07-07 | 富士フイルム株式会社 | 2板式カラー固体撮像装置及びデジタルカメラ |
FR2884352B1 (fr) * | 2005-04-11 | 2007-09-28 | Valeo Vision Sa | Capteur photosensible et applications dans le domaine automobile |
US7435962B2 (en) * | 2005-05-18 | 2008-10-14 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Imaging device and method for producing an infrared filtered digital image |
JP2007336362A (ja) * | 2006-06-16 | 2007-12-27 | Fujifilm Corp | 情報読み取り装置 |
US7737394B2 (en) * | 2006-08-31 | 2010-06-15 | Micron Technology, Inc. | Ambient infrared detection in solid state sensors |
US7435943B1 (en) * | 2007-03-29 | 2008-10-14 | Avago Technologies Ecbu Ip Pte Ltd | Color sensor with infrared correction having a filter layer blocking a portion of light of visible spectrum |
TW200843063A (en) * | 2007-04-16 | 2008-11-01 | Phoenix Prec Technology Corp | Structure of semiconductor chip and package structure having semiconductor chip embedded therein |
US7602430B1 (en) | 2007-04-18 | 2009-10-13 | Foveon, Inc. | High-gain multicolor pixel sensor with reset noise cancellation |
CN101345248B (zh) * | 2007-07-09 | 2010-07-14 | 博立码杰通讯(深圳)有限公司 | 多光谱感光器件及其制作方法 |
JP5075512B2 (ja) * | 2007-07-23 | 2012-11-21 | 富士フイルム株式会社 | 固体撮像素子及び固体撮像素子の製造方法 |
KR20100103504A (ko) * | 2007-12-05 | 2010-09-27 | 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 | 칼라-모자이크 이미저로부터 전정색 응답을 성취하는 방법 및 장치 |
US20090159799A1 (en) * | 2007-12-19 | 2009-06-25 | Spectral Instruments, Inc. | Color infrared light sensor, camera, and method for capturing images |
US7745773B1 (en) | 2008-04-11 | 2010-06-29 | Foveon, Inc. | Multi-color CMOS pixel sensor with shared row wiring and dual output lines |
KR101475464B1 (ko) * | 2008-05-09 | 2014-12-22 | 삼성전자 주식회사 | 적층형 이미지 센서 |
US7893468B2 (en) * | 2008-05-30 | 2011-02-22 | International Business Machines Corporation | Optical sensor including stacked photodiodes |
US7883916B2 (en) * | 2008-05-30 | 2011-02-08 | International Business Machines Corporation | Optical sensor including stacked photosensitive diodes |
US7915652B2 (en) * | 2008-10-24 | 2011-03-29 | Sharp Laboratories Of America, Inc. | Integrated infrared and color CMOS imager sensor |
US20100102229A1 (en) * | 2008-10-28 | 2010-04-29 | Sony Ericsson Mobile Communications Ab | Combined sensor for portable communication devices |
JP5353200B2 (ja) * | 2008-11-20 | 2013-11-27 | ソニー株式会社 | 固体撮像装置および撮像装置 |
US20100157117A1 (en) * | 2008-12-18 | 2010-06-24 | Yu Wang | Vertical stack of image sensors with cutoff color filters |
FR2941329B1 (fr) * | 2009-01-19 | 2011-03-04 | Ulis | Detecteur bispectral. |
US8355868B2 (en) * | 2009-09-30 | 2013-01-15 | Ge Aviation Systems Llc | Method and system for spectral image celestial navigation |
US9136301B2 (en) * | 2009-11-12 | 2015-09-15 | Maxchip Electronics Corp. | Multi-wave band light sensor combined with function of IR sensing and method of fabricating the same |
US8384559B2 (en) | 2010-04-13 | 2013-02-26 | Silicon Laboratories Inc. | Sensor device with flexible interface and updatable information store |
FR2966977B1 (fr) | 2010-11-03 | 2016-02-26 | Commissariat Energie Atomique | Detecteur de rayonnement visible et proche infrarouge |
FR2966978B1 (fr) | 2010-11-03 | 2016-04-01 | Commissariat Energie Atomique | Detecteur de rayonnement visible et proche infrarouge |
FR3031193B1 (fr) * | 2014-12-30 | 2018-08-17 | Thales | Dispositif d'imagerie multi-senseurs |
KR102282218B1 (ko) * | 2015-01-30 | 2021-07-26 | 삼성전자주식회사 | 3 차원 영상 획득 장치용 결상 광학계 및 이를 포함하는 3 차원 영상 획득 장치 |
US20160255323A1 (en) | 2015-02-26 | 2016-09-01 | Dual Aperture International Co. Ltd. | Multi-Aperture Depth Map Using Blur Kernels and Down-Sampling |
DE102015109044B4 (de) * | 2015-06-09 | 2020-10-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Bauteil zum Detektieren elektromagnetischer Strahlung |
CN107438170B (zh) * | 2016-05-25 | 2020-01-17 | 杭州海康威视数字技术股份有限公司 | 一种图像透雾方法及实现图像透雾的图像采集设备 |
CN108389875A (zh) | 2017-02-03 | 2018-08-10 | 松下知识产权经营株式会社 | 摄像装置 |
FR3123151B1 (fr) * | 2021-05-18 | 2024-05-10 | Commissariat Energie Atomique | Procédé de fabrication d'un dispositif optoélectronique |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3902066A (en) * | 1974-03-18 | 1975-08-26 | Us Air Force | Schottky barrier infrared detector arrays with charge coupled device readout |
US3962578A (en) * | 1975-02-28 | 1976-06-08 | Aeronutronic Ford Corporation | Two-color photoelectric detectors having an integral filter |
US4004148A (en) * | 1976-02-02 | 1977-01-18 | General Electric Company | Accumulation mode charge injection infrared sensor |
US4238760A (en) * | 1978-10-06 | 1980-12-09 | Recognition Equipment Incorporated | Multi-spectrum photodiode devices |
US4214264A (en) * | 1979-02-28 | 1980-07-22 | Eastman Kodak Company | Hybrid color image sensing array |
US4316206A (en) * | 1980-04-14 | 1982-02-16 | The United States Of America As Represented By The Secretary Of The Navy | Two color narrow bandwidth detector |
US4443701A (en) * | 1981-08-25 | 1984-04-17 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Integrating IR detector imaging systems |
US4423325A (en) * | 1981-09-02 | 1983-12-27 | Honeywell Inc. | Multi-spectral Schottky barrier infrared radiation detection array |
US4404586A (en) * | 1981-12-15 | 1983-09-13 | Fuji Photo Film Co., Ltd. | Solid-state color imager with stripe or mosaic filters |
US4581625A (en) * | 1983-12-19 | 1986-04-08 | Atlantic Richfield Company | Vertically integrated solid state color imager |
-
1983
- 1983-12-19 JP JP58239382A patent/JPS60130274A/ja active Granted
-
1984
- 1984-12-13 US US06/681,188 patent/US4651001A/en not_active Expired - Lifetime
- 1984-12-14 DE DE3486284T patent/DE3486284T2/de not_active Expired - Fee Related
- 1984-12-14 EP EP84308776A patent/EP0146375B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0135549B2 (de) | 1989-07-26 |
US4651001A (en) | 1987-03-17 |
JPS60130274A (ja) | 1985-07-11 |
DE3486284T2 (de) | 1994-06-09 |
EP0146375A3 (en) | 1987-04-08 |
EP0146375A2 (de) | 1985-06-26 |
EP0146375B1 (de) | 1994-03-02 |
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